研究目的
To develop a process for obtaining ohmic contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond films, crucial for the development of electronic devices and detectors.
研究成果
The study successfully developed a method to obtain ohmic contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond films by inducing a graphitic layer underneath the diamond surface through helium ion implantation. This method showed an ohmic behaviour with a specific contact resistance as low as 3.3 × 10-4 Ω.cm2, opening the way for more efficient ohmic contacts on intrinsic or low-doped diamond for electronic devices and detectors.
研究不足
The study acknowledges an uncertainty between the ion implantation theoretical forecasts and the final experimental evidence regarding the thickness of the implanted layer after annealing. The specific contact resistance, while low, remains relatively high for electronic devices.
1：Experimental Design and Method Selection:
The study involved the development of ohmic contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond films using Ti/Au metallic pads in the TLM configuration. One sample was implanted with helium ions to induce a graphitic layer underneath the diamond surface to improve electrical conduction.
2：Sample Selection and Data Sources:
Intrinsic and lightly boron-doped homoepitaxial diamond films were grown by MPACVD technique on (100) oriented type-Ib HPHT diamonds.
3：List of Experimental Equipment and Materials:
A home-made helium ion implanter, SEM ZEISS EVO MA-15 coupled with a Horiba-Jobin-Yvon HCLUE cathodoluminescence system, Raman spectrometer (Jobin-Yvon HR800), SEM (Leica S440), profilometer, four-point probes method (Keithley 4200-SCS model), Yokogawa 7651 programmable DC source, and a Femto Amp DLCPA-200 amplifier.
4：Experimental Procedures and Operational Workflow:
The process included helium ion implantation, thermal annealing, deposition of Ti/Au metallic pads in TLM configuration on a mesa structure, and electrical characterization by TLM method.
5：Data Analysis Methods:
Electrical performance was characterized by the TLM method, and structural evolution was studied by micro-Raman analyses.
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