研究目的
To ascertain the possibility of formation of a multi-layer structure Al/Al2O3/Ni/Cu as a metal/insulator/metal material for a metal printed circuit board application and to study the effect of the structure of AAO dielectric layer on the breakdown voltage between the two metal layers.
研究成果
The thickening of barrier sub-layer at the Al/AAO interface enhances the breakdown voltage. However, electroless deposited nickel towards formation of a conductive pattern on AAO, strongly deteriorate the dielectric properties of the layer. AAO samples having pore diameter up to 35 nm and thickness over 12 μm might be suitable for practical application as well.
研究不足
The electroless metal plating of the porous AAO layers leads to significant reduction of the breakdown voltage. The structure having largest pore diameter seems not applicable for the aim of this study due to the negative effect from the electroless metallization on AAO dielectric properties.
1：Experimental Design and Method Selection:
Technical grade aluminium foil samples were anodized in various acidic solutions at constant voltages to form AAO films. Some samples were reanodized to thicken their barrier sub-layer. Electroless nickel and electrolytic copper coatings were deposited on AAO.
2：Sample Selection and Data Sources:
Aluminium foil samples with thickness of
3：1 mm and dimensions 25×50 mm were used. List of Experimental Equipment and Materials:
SEM and EDX for morphology and elemental composition analysis, experimental setup for breakdown voltage measurements.
4：Experimental Procedures and Operational Workflow:
Degreasing, pickling, anodization, reanodization, electroless nickel deposition, electrolytic copper deposition, photolithography, and etching.
5：Data Analysis Methods:
Breakdown voltage was measured at different surface points, and scattering of breakdown voltage values was calculated.
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