研究目的
Investigating the correlation between capacitance-voltage hysteresis and accumulation capacitance frequency dispersion in metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks to understand the different kinetics of defects involved in each phenomenon.
研究成果
The study concludes that there is a lack of correlation between capacitance-voltage hysteresis and accumulation capacitance frequency dispersion in metal gate/high-k/n-InGaAs MOS stacks, suggesting that defects with different kinetics are involved in each phenomenon. Capacitance-voltage hysteresis probes slow trapping mechanisms, while accumulation capacitance frequency dispersion probes defects with short trapping/detrapping characteristic times. Each effect must be assessed separately due to the large difference in the kinetics of the probed defects.
研究不足
The study is limited to metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks and may not be directly applicable to other material systems. The interpretation of results is based on the assumption that defects with different kinetics are involved in capacitance-voltage hysteresis and accumulation capacitance frequency dispersion.
1：Experimental Design and Method Selection:
The study involved fabricating samples with different densities of defects using forming gas annealing (FGA) or substrate air exposure. The samples were characterized using multi-frequency capacitance-voltage (MFCV) measurements, C-V hysteresis measurements under dynamic stress, and constant voltage stress (CVS) sweeps with increasing stress times.
2：Sample Selection and Data Sources:
Epitaxial n-type In0.53Ga0.47As (100) substrates doped with Si were used. Samples were prepared with different surface treatments to modify trap densities.
3：53Ga47As (100) substrates doped with Si were used. Samples were prepared with different surface treatments to modify trap densities.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Agilent E4980A LCR meter for AC C-V measurements, Keithley 2636 Source Measure Unit (SMU) for I-V and I-t measurements, and a triaxial probe station.
4：Experimental Procedures and Operational Workflow:
AC C-V measurements were performed at room temperature in the dark. MFCV experiments were conducted from 200 Hz to 1.1 MHz. Successive two-way voltage stress sweeps and CVS sweeps were performed to study the hysteresis cycle.
5：1 MHz. Successive two-way voltage stress sweeps and CVS sweeps were performed to study the hysteresis cycle.
Data Analysis Methods:
5. Data Analysis Methods: The accumulation capacitance dispersion with frequency was extracted at a given gate voltage. C-V hysteresis width was extracted at the flatband voltage capacitance value. Data analysis included comparing pre- and post-stress Dit calculations and frequency dispersion.
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