研究目的
To study the effect of Ni ion irradiation on the structural, optical, and electrical properties of selenium nanowires.
研究成果
Ni ion irradiation modifies the structural, optical, and electrical properties of selenium nanowires, with optimal fluence enhancing properties for optoelectronic applications. Future work could explore other ions or materials.
研究不足
TRIM simulation has limitations as it assumes a smooth surface and does not account for impacts from previously embedded particles. The study is limited to specific ion energy and fluences, and results may vary with different materials or conditions.
1:Experimental Design and Method Selection:
The study involved synthesizing selenium nanowires via electrodeposition in a polycarbonate membrane, irradiating them with 80 MeV Ni6+ ions at various fluences, and characterizing changes using XRD, UV/Vis spectroscopy, I-V measurements, and impedance analysis. Theoretical models included Scherrer's formula for crystallite size, texture coefficient calculation, Tauc plot for band gap, and space charge limited current (SCLC) model for electrical behavior.
2:Sample Selection and Data Sources:
Selenium nanowires of 80 nm diameter and 10 μm length were synthesized. AR grade chemicals from Sigma Aldrich were used. Samples included pristine and irradiated nanowires at fluences from 1e11 to 1e13 ions/cm
3:List of Experimental Equipment and Materials:
Equipment included a three-electrode setup with potentiostat (SP-240 Biologic), polycarbonate membrane, copper tape, platinum wire, 15UD pelletron facility for irradiation, Rigaku Miniflex II XRD machine, JEOL JSM-6390 LV SEM, JEOL JFC-1600 Auto Fine coater, double beam UV-visible spectrometer, Ecopia Probe station with tungsten tips, and Keithley 2400 source meter. Materials included selenium dioxide, boric acid, gold-palladium alloy, and polycarbonate membrane.
4:Experimental Procedures and Operational Workflow:
Nanowires were electrodeposited at room temperature for 7 minutes, irradiated in vacuum with Ni ions at specified fluences, and characterized. XRD was used for structural analysis, SEM for morphology, UV/Vis for optical properties, I-V for electrical properties, and impedance spectroscopy for further electrical analysis.
5:Data Analysis Methods:
Data were analyzed using Scherrer's formula for crystallite size, equations for texture coefficient, strain, and dislocation density, Tauc plot for band gap, and SCLC model for I-V characteristics. Software tools included SRIM/TRIM for simulation.
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XRD Machine
Miniflex II
Rigaku
Used for structural analysis of nanowires by X-ray diffraction to study crystal structure and properties.
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SEM
JSM-6390 LV
JEOL
Used for morphological analysis of nanowires to examine surface morphology and geometry.
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Auto Fine Coater
JFC-1600
JEOL
Used to coat samples with gold-palladium alloy to make them conducting for SEM analysis.
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Source Meter
2400
Keithley
Used to measure current-voltage characteristics for electrical analysis.
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Potentiostat
SP-240
Biologic
Used for electrodeposition via chrono-amperometry to apply potentials and control the deposition process.
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UV-Visible Spectrometer
Used for optical studies to measure absorption spectra and determine band gap.
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Probe Station
Ecopia
Used with tungsten tips to record current-voltage characteristics of nanowires.
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Pelletron Facility
15UD
Used for irradiating samples with 80 MeV Ni6+ ions at Inter University Accelerator Centre.
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