研究目的
To cover the basics of millimeter-wave PA design in CMOS technology for integrated phased arrays, targeting the 5G NR standard, and to review key challenges and state-of-the-art techniques.
研究成果
The article summarizes essentials of mmWave PA design for 5G in CMOS, highlighting challenges like power efficiency at back-off and linearity. It surveys state-of-the-art techniques and points to future opportunities in digital pre-distortion for phased arrays.
研究不足
The paper is a tutorial and survey, so it does not present new experimental data. Limitations include the focus on conceptual challenges and reliance on existing literature, which may not cover all practical implementation issues. Future research is needed for digital pre-distortion in phased arrays.
1：Experimental Design and Method Selection:
The paper uses a tutorial approach with conceptual illustrations and a survey of existing literature. It reviews PA design methodologies, including a simplified single-transistor PA model and behavioral models for optimization.
2：Sample Selection and Data Sources:
Data is sourced from state-of-the-art CMOS PA publications and simulations, with examples from specific technologies like 28nm and 40nm CMOS processes.
3：List of Experimental Equipment and Materials:
Not applicable as the paper is a review and does not describe specific experiments.
4：Experimental Procedures and Operational Workflow:
Not applicable; the paper discusses design considerations and techniques rather than experimental procedures.
5：Data Analysis Methods:
Analysis involves comparing PA performance metrics (e.g., Pout, PAE, EVM) from literature and using simulations for behavioral modeling.
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