研究目的
To fabricate IGZO-based photoelectric neuromorphic transistors and emulate dual-functional long-term plasticity (LTD and LTP) for brain-like computation paradigms.
研究成果
IGZO-based photoelectric neuromorphic transistors successfully emulate dual-functional long-term plasticity. LTD is achieved via positive electrical pulse trains on the gate, and LTP via light pulse trains on the channel. The mechanisms involve electron trapping in Al2O3 for LTD and hole trapping/persistent photoconductivity for LTP. Future work should focus on device miniaturization for complex neural networks.
研究不足
The device size is large due to the use of metal shadow masks for patterning, limiting the fabrication of complex neural networks. Advanced micro-nano processing technology is needed for future miniaturization.
1：Experimental Design and Method Selection:
Fabrication of IGZO-based neuromorphic transistors on ITO-glass substrates at low temperature using atomic layer deposition for Al2O3 gate dielectric and RF magnetron sputtering for IGZO channel layer. The design rationale is to mimic synaptic plasticity in biological systems.
2：Sample Selection and Data Sources:
Devices were fabricated with specific dimensions (channel width 1000 μm, length 80 μm) and tested for synaptic characteristics.
3：List of Experimental Equipment and Materials:
Al2O3 gate dielectric (~45 nm thick), IGZO channel layer (~40 nm thick, In:Ga:Zn=2:2:1 atom ratio), ITO source/drain electrodes, impedance analyzer (HIOKI IM 3533-01 LCR meter), source measurement units (Keithley 2636B), fiber coupled laser module (CNI Laser PGL-FC-405).
4：5). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Fabrication steps include deposition of Al2O3 at 80°C, patterning of IGZO channel and ITO electrodes using shadow masks. Measurements include capacitance of Al2O3, transfer characteristics, and synaptic responses to electrical and light pulses.
5：Data Analysis Methods:
Analysis of EPSC responses, synaptic weight changes, and mechanisms based on electron/hole trapping and persistent photoconductivity.
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Source measurement unit
2636B
Keithley
Measurement of photoelectric synaptic characteristics of the devices
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Laser module
PGL-FC-405
CNI Laser
Application of light pulses of 405 nm on the IGZO channel layer
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LCR meter
IM 3533-01
HIOKI
Measurement of capacitance of the Al2O3 dielectric layer
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IGZO target
Deposition of IGZO channel layer by RF magnetron sputtering
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ITO target
Deposition of ITO source/drain electrodes by DC sputtering
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