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[IEEE 2018 IEEE 3rd International Conference on Image, Vision and Computing (ICIVC) - Chongqing (2018.6.27-2018.6.29)] 2018 IEEE 3rd International Conference on Image, Vision and Computing (ICIVC) - Surface Defect Detection Based on Gradient LBP
摘要： The LBP histogram obtained based on the local binary pattern (LBP) method usually has a higher dimension, and not conducive to calculation. The LBP method adopts the gray difference value between single points as the LBP output value, which is not robust to noise and illumination. Therefore, this paper improves the traditional LBP method and proposes a surface defect detection method based on gradient local binary pattern (GLBP), which uses image sub-blocks to reduce the dimensionality of the LBP data matrix. The method adopts weighted binary output values in eight directions within the neighborhood to indicate local gray changes, which suppresses the effects of light and noise on the detection results. Experiments show that the method can determine the defect location well and provide good feature information for subsequent defect classification.
关键词： surface defect detection,gradient LBP,LBP,image sub-block division,LBP dimension reduction
更新于2025-09-10 09:29:36
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[IEEE IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - Valencia, Spain (2018.7.22-2018.7.27)] IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - Superpixel Based Dimension Reduction for Hyperspectral Imagery
摘要： This paper focuses on dimension reduction (DR) technique for hyperspectral image (HSI). In this paper, we proposed a superpixel-based linear discriminant analysis (SP-LDA) dimension reduction method for HSI classification. Pixels within a local spatial neighborhood are expected to have similar spectral curves and share the same class label. To fully exploit the spatial structure, superpixel segmentation is firstly introduced to generate the superpixel map, which can adaptively explore the neighborhood structure information. Moreover, we extend the SP-LDA algorithm by combining the extracted feature from spectral and spatial dimensions, which can fully exploit complementary and consistent information from both dimensions. The experimental results on two standard hyperspectral datasets confirm the superiority of the proposed algorithms.
关键词： Hyperspectral image,superpixel,dimension reduction,spectral-spatial
更新于2025-09-10 09:29:36
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[IEEE IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - Valencia, Spain (2018.7.22-2018.7.27)] IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - A Novel Deep Learning Framework by Combination of Subspace-Based Feature Extraction and Convolutional Neural Networks for Hyperspectral Images Classification
摘要： Approaches based on deep learning have gained an increased attention in the recent years in particular Remote Sensing. Convolutional Neural Networks (CNNs) as one of these deep learning techniques has demonstrated remarkable performance in visual recognition applications. However, using well-known pre-train models such as GoogleNet and VGGNet in the area of hyperspectral image classification due to the high dimensionality and the insufficient training samples is intractable. The current study proposed a new and fixes CNN architecture for two real hyperspectral data sets. To overcome curse of dimensionality we perform a subspace-based feature extraction method by calculating the orthonormal basis of correlation matrix for each class to reduce the dimensionality of hyperspectral images and increasing signal to noise ratio. This framework combines the proposed CNN architecture and subspace reduction method to prepare informative features (from subspace method) and designing optimized CNN by considering limitation of training samples. Also, feature generated by subspace reduction method is compatible by the nature of class based CNNs and a logistic regression as a classifier in the last layer of proposed architecture. Experimental results from two real and well-known hyperspectral images, the Indiana Pines and the Pavia University scenes show that the proposed strategy leads to a performance improvement, as opposed to using the original data and conventional feature extraction strategies which have been employed during the recent approaches. The classification overall accuracy of ca. 98.1% and 98.3% were obtained in Indian Pine and Pavia University respectively.
关键词： Dimension Reduction,Deep Learning,Feature Extraction,Convolutional Neural Network,Hyperspectral Image Classification,Subspace-based Feature Extraction
更新于2025-09-10 09:29:36
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Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width
摘要： GaN-based vertical transistors have demonstrated its excellent properties for high-power and high-frequency electronic devices. This work introduces a GaN-based static induction transistor (SIT) which is another form of vertical GaN transistors without requiring any p-type GaN and gate dielectrics for its operation. Processing strategy to generate the GaN SIT with a sub-micrometer fin width involves photoresist (PR)-assisted planarization with an understanding of dry etch parameters for the planar PR surface. The efficacy of this process is demonstrated by the device’s triode-like output characteristics with high current density (0.65 kA cm?2) and low ON resistance (1.48 mΩ cm2) at 1 V of drain voltage. In addition, the electrical properties such as current density and modulation are examined depending on the fin width of GaN SIT. The result reveals that the size reduction in the GaN SIT utilizing the sub-micrometer fin as a channel could increase the current modulation, but it could decrease the current density because of the raised potential minima due to the depletion region overlap. It is believed that the GaN SIT demonstrating high blocking voltage and low ON resistance would present a very promising class of transistor for next-generation high-power and high-frequency electronics.
关键词： Schottky junction,vertical channel,sub-micrometer dimension,GaN,static induction transistors
更新于2025-09-10 09:29:36
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High-Dimensional Bell State Analysis for Photon-Atoms Hybrid System
摘要： High-dimensional Bell state analysis (HDBSA) has great application potential in the high-capacity quantum communication and quantum information processing. In this paper, we propose a scheme to completely distinguish the 2N -dimensional Bell states of a hybrid system with the help of the nonlinear interaction between the (cid:2)-type atoms and a photon system. We use the unit-probability quantum teleportation with non-maximum entanglement as an example to show the application of HDBSA. Finally, we discuss its possible realization with current experimental techniques. Our HDBSA protocol may pave a new way for high-capacity long-distance quantum communication.
关键词： Bell state analysis,High dimension
更新于2025-09-10 09:29:36
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Linewidth calibration using a metrological atomic force microscope with a tip-tilting mechanism
摘要： The linewidth or critical dimension (CD) of a nanoscale line pattern is calibrated using a metrological atomic force microscope with a tip-tilting mechanism (tilting-mAFM). The tilting tip allows scanning of the line pattern’s vertical sidewalls. The tilting-mAFM performs two measurements on each side of the line pattern, and two datasets are stitched together to reconstruct the complete shape of the line pattern. Further, CD is measured based on this pattern. A linewidth standard with a subnanometer-scale uncertainty was used as a target sample to verify this CD calibration procedure. The calibrated CD using tilting-mAFM was 111.2 nm with an expanded uncertainty of 1.0 nm, which was the smallest uncertainty that was observed among the CD measurements that were reported using the tilting-AFM instruments. Further, the difference of this CD value from the reference CD was only 0.2 nm. The results reveal that tilting-mAFM can be used for CD metrology with a single-nanometer accuracy.
关键词： metrological AFM,critical dimension (CD),calibration,tilting-AFM,nanometrology,linewidth
更新于2025-09-10 09:29:36
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The investigation of the diameter dimension effect on the Si nano-tube transistors
摘要： The vertical gate-all-around (V-GAA) Si nano-tube (NT) devices with different diameter dimensions are studied in this work with the promising device performance. The V-GAA structure makes the transistor easy to be scaled down continuously to meet the complementary metal-oxide-semiconductor (CMOS) scaling requirements of the 7/10 nm technology node and beyond. The Si NT device with the hollow structure is demonstrated to have the capability to “deplete” and “screen-out” the out-of gate control carriers in the center of the NT and further result in the better device short channel control. Based on the study in this work, the V-GAA Si NT device with the optimized diameter dimension (= 20 nm) can benefit the Ion-state current and reduce the Ioff-state stand-by power simultaneously, due to the less surface roughness scattering and the better short channel control characteristics. The proposed V-GAA Si NT device is regarded as one of the most promising candidates for the future application of the sub-7/10 nm logic era.
关键词： diameter dimension effect,Si nano-tube transistors,short channel control,surface roughness scattering,vertical gate-all-around
更新于2025-09-10 09:29:36
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Total-ionizing-dose effects and proton-induced displacement damage on MoS2-interlayer-MoS2 tunneling junctions
摘要： Tunneling-dominated charge transport is demonstrated in vertically stacked MoS2/interlayer/MoS2 heterostructures with Al2O3, h-BN and HfO2 dielectrics. All devices are highly resistant to 10-keV X-ray irradiation. Only small transient changes in X-ray-induced photocurrent are observed as a result of trap creation in the thin interlayer dielectric, with rapid passivation. Samples with Al2O3 and h-BN interlayer dielectrics show significant increases in conduction current during proton irradiation, due to displacement-damage-induced defects that lower the effective tunnel-barrier height. Density-functional-theory calculations provide insights into the pertinent defects. Devices with HfO2 interlayer dielectrics show great promise for use in radiation-tolerant, ultimately-scaled tunnel FETs.
关键词： 2 dimension,HfO2,proton irradiation,X-ray,DFT,h-BN,MoS2 tunnel junction
更新于2025-09-09 09:28:46
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On independent resolving number of TiO 2 [m, n] nanotubes
摘要： Let G(V, E) be a Graph. A set W ? V of vertices resolves a graph G if every vertex of G is uniquely determined by its vector of distances to the vertices in W. The metric dimension of G is the minimum cardinality of a resolving set. By imposing different conditions on W we get conditional resolving sets. A resolving set W is said to be an independent resolving set if W contains isolated vertices. Independent resolving number denoted by ir(G) is referred to its cardinality. In this paper we investigate independent resolving number for Titanium dioxide Nanotube.
关键词： independent resolving number,Metric dimension,Titanium dioxide,Nanotube,independent resolving set,Nanostructure
更新于2025-09-09 09:28:46
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Device-independent witness of arbitrary-dimensional quantum systems employing binary-outcome measurements
摘要： Device-independent dimension witnesses (DWs) are a remarkable way to test the dimension of a quantum system in a prepare-and-measure scenario imposing minimal assumptions on the internal features of the devices. However, as the dimension increases, the major obstacle in the realization of DWs arises due to the requirement of many-outcome quantum measurements. In this article we propose a variant of a widely studied communication task (random access code) and take its average payoff as the DW. The presented DW applies to arbitrarily large quantum systems employing only binary-outcome measurements.
关键词： device-independent dimension witnesses,binary-outcome measurements,quantum systems,random access code
更新于2025-09-09 09:28:46