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LED Structures Based on ZnO Films Obtained by RF Magnetron Sputtering for the UV Spectral Range
摘要： Data for the influence of different defects on the photoluminescence and electroluminescence spectra (emission intensity and wavelength) of n-ZnO/p-GaN structures are reported.
关键词： ZnO films,photoluminescence,RF magnetron sputtering,UV spectral range,electroluminescence
更新于2025-09-23 15:21:01
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Glass formation in amorphous ZnO films revealed by chip calorimetry
摘要： In this work, we utilize the high heating/cooling rates of chip calorimetry to perform in situ annealing of an inkjet-printed zinc oxide solgel ink consisting of zinc acetate, 2-methoxyethanol, and monoethanolamine and directly observe the thermodynamic signatures of its corresponding structural phase transformations. We find that rapid solvent removal achieved by annealing above the boiling point of the solvent, similar to an industrial drying technique known as flash drying, induces the formation of (cid:1) 98% amorphous zinc oxide films having an unprecedented, largely pronounced glass transition while retaining its semiconductor properties evidenced by field-effect transistor measurements. Thin-films produced at comparable heating rates to those used for calorimetry experiments are used to corroborate these findings using independent measurements. Prepared films exhibit a clear amorphous halo centered about the three most prominent Bragg positions of the wurtzite phase of ZnO and remain thermally stable against crystallization until 250 (cid:3)C have a room temperature thermal conductivity of (cid:1) 1:03–1:4 W m(cid:4)1 K(cid:4)1 (consistent with recent ab initio estimates) with supporting evidence of a structural relaxation near TG consistently observed in both electronic and thermal conductivity.
关键词： semiconductor properties,amorphous ZnO films,glass formation,chip calorimetry,flash drying
更新于2025-09-23 15:19:57
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Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications
摘要： F-and-Ga co-doped ZnO films were sputter-deposited on glass substrates by RF magnetron sputtering method. The fabricated films were characterized by different techniques. It was found that all the films were poly-crystalline with a hexagonal wurtzite structure with a c-axis preferred orientation of growth. The effect of the substrate temperature on the surface morphology, electrical and optical properties of the films was also investigated. The optimal growth temperature was found to be 440 oC which led to the optimal film with the resistivity of 6.81 × 10?4 Ωcm, carrier concentration of 2.61 × 1020 cm?3, mobility of 35.1 cm2/V, over-90% transmittance in the region of 400–1200 nm and a wide optical bandgap of 3.49 eV. This optimal film was employed in as the front contact in perovskite solar cells and resulted in a high power-conversion efficiency of 15.32%. This indicates that such a film can be promisingly useful for high-performance thin-film solar cells.
关键词： High mobility,Thin-film solar cells,F-and-Ga co-doped ZnO films,Magnetron sputtering
更新于2025-09-23 15:19:57
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Innovative wide-spectrum MGZO transparent conductive films grown via reactive plasma deposition for Si hetero-junction solar cells
摘要： In this work, wide-spectrum Mg- and Ga co-doped ZnO (MGZO) transparent conductive films are developed via reactive plasma deposition (RPD) technique with soft thin-film growth process. MGZO film with a work function of ~4.36 eV can be achieved within 12 min without any intentional substrate-heating treatment. 480nm-thickness MGZO film exhibits a low resistivity of ~9.9x10-4 Ωcm and a high transmittance of ~82.6% in the UV-VIS-NIR region (λ approximately 400 nm-1200 nm). XRD spectra show that MGZO films exhibit (103) preferred orientation as the film thickness increases. A silicon hetero-junction (SHJ) solar cell based on 480nm-thick MGZO at the front side is completed. Excellent continuity of MGZO film is proven by the cross-sectional SEM images and there are no cracks and pinholes on the top and bottom of the c-Si pyramids. Further efficiency improvements are achieved using an ultra-thin SnOx buffer layer with an ameliorated p-a-Si:H/TCO interface. Also, a silicon hetero-junction (SHJ) solar cell using MGZO films on both sides is achieved with a conversion efficiency of 19.02%. These experimental results demonstrate that low-cost RPD-grown MGZO TCO materials could be commercially appropriate replacements for the conventional In2O3-based materials commonly used in SHJ solar cells and other optoelectronic devices.
关键词： Mg and Ga co-doping,Solar cells,Si heterojunction (SHJ),ZnO films,Transparent conductive oxides (TCO),Reactive plasma deposition (RPD)
更新于2025-09-19 17:13:59
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Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes
摘要： The hydrothermal growth (HTG) of crystalline n-ZnO ?lms on both the nonpatterned and patterned p-GaN epilayers with a honeycomb array of etched holes is demonstrated, and its application in n-ZnO/p-GaN heterojunction light-emitting diodes (HJ-LEDs) is reported. The results reveal that an HTG n-ZnO ?lm on a patterned p-GaN layer exhibits a high-quality single crystal with FWHMs of 0.463 and 0.983° obtained from a ω-rocking curve and a ?-scan pattern, respectively, which are much better than those obtained on a nonpatterned p-GaN layer. In addition, the n-ZnO/patterned p-GaN HJ-LED exhibited a much better rectifying diode behavior owing to having a higher n-ZnO ?lm crystallinity quality and an improved interface with the p-GaN layer. Strong violet and violet-blue lights emitted from the n-ZnO/patterned p-GaN HJ-LED at around 405, 412, and 430 nm were analyzed.
关键词： crystallinity quality,n-ZnO films,heterojunction light-emitting diodes,hydrothermal growth,p-GaN epilayer
更新于2025-09-19 17:13:59
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Ultraviolet photodetectors based on doped ZnO films
摘要： In this paper, we report the realization of ultraviolet (UV) photodetector based on doped ZnO films. The ZnO p-n junction was fabricated on indium tin oxide (ITO) coated glass, which consists of n-type and p-type layers based on Ga-doped (2 at.%) and N-doped (20 at.%) ZnO films, respectively. The current-voltage (IV) characteristics, photosensitivity, photoresponsitivity, and photocurrent gain were derived to determine the performance of the device. At 5 V reverse bias, the ZnO-based UV photodetector exhibits photosensitivity of 10.9, photoresponsivity of 2.1 × 10-2 AW-1, and photoconductive gain of 7.2 × 10-2.
关键词： ultraviolet photodetectors,sol-gel spin coating,p-n junction,doped ZnO films
更新于2025-09-12 10:27:22
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Multi-mode optical coded patterns enabled by upconversion nanoparticles and photonic crystals
摘要： The Al-Zr-ZnO films was deposited on the surface of n-Si (111) by sol-gel method. The results showed that the average grain size of Al-Zr-ZnO films decreases due to ion doping concentration. Based on XPS analysis, the surface defect oxygen of Al-Zr-ZnO films decreases. As for graphene/ Al-Zr-ZnO Schottky contact, barrier height increased and ideality factor decreased with the increasing of Al ion or Zr ion doping, indicating that the rectifying characteristics of graphene/Al-Zr-ZnO Schottky contacts was enhanced due to ion co-doping. It can be explained that oxygen vacancies of Al-Zr-ZnO films decreases due to the ion doping and weakens Fermi level pinning.
关键词： sol-gel method,Ion doping,Al-Zr-ZnO films,electrical properties,graphene
更新于2025-09-11 14:15:04