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Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
摘要： Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s-1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s-1). The better SRV with AlOxNy film is due to the collective effect of field-effect passivation by the presence of fixed negative charges, and chemical passivation by the presence of hydrogen within the film. The capacitance-voltage, and conductance measurements also are carried out using metal-oxide-semiconductor structure to determine the fixed negative charge density (Nf,ox), and defect density of states (Dit) in the AlOxNy films. The better surface passivation is attributed to unusually large Nf,ox of ~6.07 × 1012 cm-2, and minimal Dit of ~1.01 × 1011 cm-2-eV-1 owing to the saturation of Si dangling bonds by the hydrogen within the AlOxNy film matrix after the annealing step.
关键词： Surface passivation,Time-of-flight elastic recoil detection analysis (ToF-ERDA),Aluminum oxynitride,Thermal atomic layer deposition,Black flexible silicon
更新于2025-10-22 19:40:53
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In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide
摘要： A degradation of crystalline silicon surface passivation provided by aluminum oxide (Al2O3) is generally observed after plasma processes, e.g., deposition of amorphous silicon nitride. To minimize such detrimental effect, a better understanding of the interaction between plasma species and the Al2O3 layer is required. Using in situ photoluminescence, the passivation quality of as-deposited and annealed crystalline silicon wafers coated with Al2O3 grown by atomic layer deposition is characterized in real time during argon-hydrogen plasma exposure. The photoluminescence intensity of as-deposited samples instantly steps up after the plasma ignition, and then it gradually decreases as a function of plasma exposure time. However, only degradation of photoluminescence signal can be found if the samples are annealed prior to the plasma treatment. The interaction between vacuum UV light from plasma and different types of chemical bonds in the Al2O3 layer is proposed to explain the obtained results. Understanding the mechanisms and root cause leading to different behavior between as-deposited and annealed samples under plasma exposure is a first step toward redesigning the process flow for better surface passivation.
关键词： in situ photoluminescence,plasma exposure,aluminum oxide,surface passivation
更新于2025-09-23 15:23:52
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Preparation of Rod-like Aluminum Doped Zinc Oxide Powders by Sol-gel Technique Using Metal Chlorides and Acetylacetone Precursors
摘要： Al-doped ZnO (AZO) powders were prepared by using metal chloride precursors and the sol-gel technique. IR peaks observed at 1590 cm-1 and 1620 cm-1 indicated the formation of metal chelate as a consequence of the addition of acetylacetone to the metal chloride solution. TG-DSC analysis of the AZO gels confirmed the formation of metal chelate as evidenced by the development of several weight loss peaks accompanied by the introduction of new endothermic peaks. The resulting AZO gels were annealed at 500, 600, and 800 ℃ to study the effect of annealing temperature. XRD and SEM results showed that crystallization of AZO gels takes place around 600 ℃. Hexagonal wurtzite structure was identified as the main phase for all the samples. In addition, small shift of the XRD (002) peak coupled with XPS results from the AZO powders confirmed the successful doping of the ZnO powders. Micron sized rod-like AZO powders were uniform in dimension and morphology and remained stable even at 800 ℃.
关键词： rod-like,aluminum doped ZnO,sol gel,metal chloride,acetylacetone
更新于2025-09-23 15:23:52
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Optical Properties of Nanohole Arrays with Various Depths
摘要： Studies to imitate structural colors have been conducted with various methods, most of which are disadvantageous for mechanical stability and economic feasibility because of complexity or lack of reproducibility. Numerous alternatives to overcome these shortcomings have been proposed. One such method is the anodic oxidation of aluminum, which requires relatively simple equipment and techniques. The present study used the aluminum anodic oxidation process to fabricate nanohole arrays of various sizes. Furthermore, using the finding that the structure color is the most strongly influenced by the nanohole depth based on the Bragg's Law, this study fabricated nanoholes of various depths to identify the structural colors arising from varied depths. This study further identified the colors from the same color series occurring periodically at each interval of 250 nm using the CIE 1931 color coordinate system. Moreover, nanohole arrays with two different depths were fabricated on a single substrate to confirm the coexistence of different colors and their capacity for deformation into various shapes.
关键词： Nanohole array,Structural color,Bragg's law,Anodic aluminum oxidation,Thin film effect
更新于2025-09-23 15:23:52
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Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup
摘要： We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 °C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d33 = (7.33 ± 0.08) pC·N?1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.
关键词： Ellipsometry,Aluminum nitride thin film,Optical properties,d33 piezoelectric coefficient,Kaufman ion-beam source,Ion-beam sputtering deposition,(001) preferential orientation,X-ray diffraction
更新于2025-09-23 15:23:52
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Al <sup>3+</sup> -Morpholine-appended Anthracene Ensemble as a Dual Photonic Switch for H <sub/>2</sub> PO <sub/>4</sub><sup>?</sup> and CN <sup>?</sup> Ions and its Biological Applications
摘要： A highly selective Al3+-morpholine anthracene (1(cid:129)Al3+) chelate was designed as a novel ?uorescent photonic switch for H2PO4? and CN? ions. The in situ-generated Al3+ chelate could be used to detect H2PO4? ions only in the absence of CN? ions. In contrast, CN? ions effectively extruded Al3+ from the chelate, resulting in the regeneration of probe 1 with a concomitant revival of PET, resulting in a turn-off response. By exploiting the complexation- and decomplexation-aided off–on switching system through the sequential addition of Al3+ followed by H2PO4? or CN?, combinational photonic logic circuits, as well as image-guided ?uorogenic tracking, was demonstrated.
关键词： Aluminum,Photonic switch,Morpholino-anthracene,Image-guided ?uorogenic tracking,Combinational photonic logic circuit
更新于2025-09-23 15:23:52
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Comparative investigation of performances for HIT-PV and PVT systems
摘要： Crystalline silicon heterojunction solar cells are a promising candidate for high efficiency solar cells, and the heterojunction photovoltaic (HIT-PV) module is strongly dependent on the temperature. In this study, we design three heterojunction photovoltaic modules to improve the performance by preventing from over-heating, with, glass, Tedlar/Polyethylene terephthalate/Tedlar (TPT) and aluminum substrates, respectively. The efficiencies of those HIT-PV modules are investigated under four different outdoor climates. The aluminum-module shows the best thermal dissipation; while the glass-module/TPT-module have the better electrical efficiency and electrical energy, since there is the high reflectivity layer on the surface of the glass (and TPT) substrates rather than the aluminum substrate. In order to increase the output power of HIT-PV modules, we design a heterojunction photovoltaic thermal (HIT-PVT) system based on HIT solar cells and aluminum thermal collector. The measured results of HIT-PVT system show that the coolant circulation increase the output power, and the HIT-PVT module can provide the domestic hot water supply (up to 51.2 °C) under outdoor conditions. In addition, the cost of HIT-PVT systems are much lower than those of the conventional photovoltaic systems, and the investment payback time can be less than 3 years.
关键词： Electrical energy,HIT-PV module,Three substrates,Aluminum thermal collector
更新于2025-09-23 15:23:52
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Optimal target sputtering mode for aluminum nitride thin film deposition by high power pulsed magnetron sputtering
摘要： Low surface roughness, low residual stress, and (002) textured aluminum nitride (AlN) thin films are favored for applications in microelectronic and optoelectronic devices. In this paper, AlN thin films were deposited by reactive high power pulsed magnetron sputtering (HPPMS). The effect of aluminum target sputtering mode and sputtering power on thin film residual stress, crystalline structure, surface roughness, and morphology of AlN thin films was studied. The results indicate that, with Al target sputtering mode transfer from metallic mode to transitional and compound modes, respectively, the number of Al species decrease, and ion-to-neutral ratio of Al species increase. Comparing the AlN thin film deposited in compound mode with that deposited in transitional mode, the latter exhibited lower surface roughness and residual stress. In addition, AlN thin film with (002) texture and lower residual stress is obtained by increasing sputtering power in transitional mode. For fabricating AlN film via reactive HPPMS with a particular (002) texture, low surface roughness, and residual stress, sputtering the target in the transitional mode with high sputtering power is optimal.
关键词： Aluminum nitride,Microstructure,Texture,High power pulsed magnetron sputtering,Sputtering modes,Sputtering power
更新于2025-09-23 15:23:52
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Fabrication of thin-film spherical anodic alumina oxide templates using a superimposed nano-micro structure
摘要： Compared to the single-scale planar anodic aluminum oxide (AAO) film, the multi-scale hierarchical AAO structures can have a better performance due to the larger surface area. The conventional multi-scale AAO structure on a micro-pattern surface was fabricated using time-consuming lithography and etching process at high cost. In this article, the 3D porous AAO films with nanopores of 35~45 nm in diameter have been achieved on the surface of silica micro beads of 2 μm in diameter. The superimposed nano-micro structure was fabricated using hybrid-pulse anodizing the sputtered Al film on beads with a period of negative potential to dissipate Joule heating at room temperature. The 3D AAO-on-beads structure provides a large-surface-area substrate for enhancing the sputtered TiO2 photocatalysis. The photocatalysis on the superimposed nano-micro structures can exhibit a high performance with the MB concentration of 30% after 15 hr photo-degradation.
关键词： AAO,nano-microstructures,anodic aluminum oxide,nanoporus alumina,micro bead
更新于2025-09-23 15:23:52
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Sol-Gel Template Synthesis and Characterization of Lu2O3:Eu3+ Nanowire Arrays
摘要： Uniform Lu2O3:Eu3+ nanowire arrays were successfully prepared by the sol-gel process using anodic aluminum oxide (AAO) templates. The as-synthesized nanowires are homogeneous, highly ordered, and dense and have a uniform diameter of ~300 nm defined by the AAO templates. The X-ray diffraction and selected area electron diffraction results show that the Lu2O3:Eu3+ nanowires have a polycrystalline cubic structure, and the crystallite size of the Lu2O3:Eu3+ nanowires is confined by the AAO template. The nanowires within the AAO template showed good photoluminescence and X-ray-excited optical luminescence performances for Lu2O3:Eu3+. The emission peaks were attributed to the 5D0 → 7FJ transitions of Eu3+ (J = 0, 1, 2, 3).
关键词： sol-gel method,nanowire arrays,Lu2O3:Eu3+,anodic aluminum oxide (AAO)
更新于2025-09-23 15:23:52