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Atomic layer deposition of amorphous antimony sulfide (a-Sb <sub/>2</sub> S <sub/>3</sub> ) as semiconductor sensitizer in extremely thin absorber solar cell
摘要： Atomic layer deposition of amorphous antimony sulfide (a-Sb2S3) is demonstrated with an alternating exposure of tris(dimethylamino) antimony (TDMASb) and hydrogen sulfide (H2S) at 150 °C in a custom-built viscous flow reactor. Growth mechanism and deposition chemistry are investigated by in situ quartz crystal microbalance and in situ Fourier Transform Infrared spectroscopy. Reaction hypothesis facilitating the binary reaction is established by quantum mechanical density functional theory calculations that essentially support the experimental findings. The developed material is used as a photon harvester in solar cells under extremely thin absorber configuration, with TiO2 and Spiro-OMeTAD as electron and hole transporting layers, respectively. Investigation of charge injection properties with surface photovoltage spectroscopy reveals low but non-negligible density of interfacial (sensitizer/TiO2) electronic defects. The conventional viscous flow reactor configuration is modified to showerhead-type reactor configuration to achieve better uniformity and conformality of a-Sb2S3 on highly porous TiO2 scaffolds. a-Sb2S3 device performance is optimized to achieve the highest power conversion efficiencies of 0.5% while annealed crystalline c-Sb2S3 device reaches power conversion efficiencies of 1.9% under 1 sun illumination.
关键词： surface photovoltage spectroscopy,extremely thin absorber solar cell,quantum mechanical density functional theory,amorphous antimony sulfide,Atomic layer deposition
更新于2025-09-19 17:13:59
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Energy-Level Graded Al-doped ZnO Protection Layer for Copper Nanowire-Based Window Electrodes for Efficient Flexible Perovskite Solar Cells
摘要： Flexible perovskite solar cells (PSCs) have attracted significant interest as promising candidates for portable and wearable devices. Copper nanowires (CuNWs) are promising candidates for transparent conductive electrodes for flexible PSCs because of their excellent conductivity, flexibility, and cost-effectiveness. However, because of the thermal/chemical instability of CuNWs, they require a protective layer for application in PSCs. Previous PSCs with CuNW-based electrodes generally exhibited poor performances compared with their indium tin oxide (ITO)-based counterparts due to the neglect of the interfacial energetics between electron transport layer (ETL) and CuNWs. Herein, an Al-doped ZnO (AZO) protective layer fabricated using atomic layer deposition (ALD) is introduced. The AZO/CuNW-based composite electrode exhibits improved thermal/chemical stability and favorable band alignment between the ETL and CuNWs, based on the Al dopant concentration tuning. As a result, the Al content gradient AZO (g-AZO), composed of three successively deposited AZO layers, leads to highly efficient flexible PSCs with a power conversion efficiency (PCE) of 14.18%, whereas the PCE of PSCs with non-gradient AZO layer is 12.34%. This improvement can be attributed to the efficient electron extraction and reduced charge recombination. Furthermore, flexible PSCs based on g-AZO-based composite electrodes retain their initial PCE, even after 600 bending cycles, demonstrating excellent mechanical stability.
关键词： copper nanowire,flexible perovskite solar cell,transparent bottom electrode,energy level alignment,atomic layer deposition
更新于2025-09-19 17:13:59
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Perovskite Quantum Dot Light‐Emitting Diodes Using Atomic Layer Deposited Al <sub/>2</sub> O <sub/>3</sub> and ZnO Interlayers
摘要： Green emitting CsPbBr3 Perovskite quantum dot light-emitting diodes (PQD-LEDs) were fabricated in a standard device structure with insertion of atomic layer deposited interlayer. This interlayer enables deposition of solution processed ZnO nanoparticles on top of CsPbBr3 PQDs directly, and successfully passivate PQD surface from polar solvent damages during ZnO spin-casting.
关键词： atomic layer deposition,Quantum dot,interlayer,light-emitting diode,Perovskite
更新于2025-09-19 17:13:59
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The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells
摘要： In this paper, we report the development of Cd-free bu?ers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)2-based solar cells. The ALD process gives good control of thickness and the S/S +O ratio content of the ?lms. The in?uence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) bu?er layers on the e?ciency of the Cu(In,Ga)(S,Se)2 solar cells were investigated. We present the ?rst results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm2. These Zn(O,S) layers were deposited by atomic layer deposition at 120?C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H2S/H2O+H2S) process results in a S/Zn ratio of 0.7. We achieved independently certi?ed aperture area e?ciencies of 17.1% for 0.4 cm2 cells.
关键词： atomic layer deposition,Zn(O,S) thickness,Cu(In,Ga)(S,Se)2 absorber layer,Zn(O,S) ratio,Zn(O,S) temperature window,bu?er layer,solar cell
更新于2025-09-16 10:30:52
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Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
摘要： Low-temperature atomic layer deposition (ALD) offers significant merits in terms of processing uniform, conformal and pinhole-free thin films, with sub-nanometer thickness control. In this work, plasma-assisted atomic layer deposition (ALD) of nickel oxide (NiO) is carried out by adopting bis-methylcyclopentadienyl-nickel (Ni(MeCp)2) as precursor and O2 plasma as co-reactant, over a wide table temperature range of 50–300 °C. A growth rate of 0.32 ? per cycle is obtained for films deposited at 150 °C with an excellent thickness uniformity on a 4 inch silicon wafer. Bulk characteristics of the NiO film together with its interfacial properties with a triple cation hybrid perovskite absorber layer are comprehensively investigated, with the aim of integrating NiO as hole transport layer (HTL) in a p–i–n perovskite solar cell (PSC) architecture. It is concluded that "key" to efficient solar cell performance is the post-annealing treatment of the ALD NiO films in air, prior to perovskite synthesis. Post-annealing leads to better wettability of the perovskite layer and increased conductivity and mobility of the NiO films, delivering an increase in short-circuit current density (Jsc) and fill factor (FF) in the fabricated devices. Overall, a superior 17.07% PCE is achieved in the post-annealed NiO-based PSC when compared to the 13.98% PCE derived from the one with pristine NiO.
关键词： plasma-assisted ALD,perovskite solar cells,atomic layer deposition,nickel oxide,hole transport layer
更新于2025-09-16 10:30:52
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Effect of tapered fiber structure on the PbS Nanomaterials optical fiber amplifier excited by evanescent wave
摘要： PbS nanomaterials fiber amplifier was fabricated by coating PbS nanomaterials onto tapered fiber. PbS is deposited by atomic layer deposition technique. The influence to optical properties is discussed when changing the structure of tapered fiber.
关键词： optical fiber amplifier,atomic layer deposition,PbS nanomaterials,tapered fiber
更新于2025-09-16 10:30:52
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Optimization of TiO <sub/>2</sub> compact layer formed by atomic layer deposition for efficient perovskite solar cells
摘要： The microstructure of the compact TiO2 (c-TiO2) layer formed by atomic layer deposition (ALD) was investigated for optimization of organometal halide perovskite solar cells (PSCs). The ALD c-TiO2 layer has an amorphous structure alleviating performance deterioration of the PSCs caused by defects. To apply the optimized ALD c-TiO2 layer to the PSCs, an ef?ciency of 18.36% was achieved. It is the top record among the PSCs using a compact TiO2 layer formed by ALD.
关键词： TiO2,perovskite solar cells,optimization,microstructure,atomic layer deposition
更新于2025-09-16 10:30:52
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Photonics integrated circuits using Al<sub>x</sub>Ga<sub>1-x</sub>N based UVC light-emitting diodes, photodetectors and waveguides
摘要： We report on a study of UVC photonics integrated circuit (PIC) consisting of monolithically integrated AlxGa1-xN multiple quantum wells (MQWs) based light-emitting diodes, detectors and channel waveguides on sapphire substrates. The waveguide stack consisted of a 1.5 μm thick n-Al0.65Ga0.35N waveguide over an AlN (3.5 μm thick) clad layer. Using the integrated devices, we measured that approximately 80% of the guided-light was confined in the n+-Al0.65Ga0.35N layer, estimated the multi-mode ridge waveguide losses to be 23 cm-1 at λemission~280 nm. We also estimated the multi-mode ridge waveguide losses to be 23 cm-1 at λemission~280 nm. We also measured that approximately 80% of the guided-light was confined in the n+-Al0.65Ga0.35N layer, 7% in the underlying AlN cladding and the remaining 13% in the double-side polished sapphire substrate.
关键词： AlGaN LED,Atomic Layer Deposition,UVC Waveguides,Waveguide Loss,AlGaN Detector,Photonic Integrated Circuit,high Al composition
更新于2025-09-16 10:30:52
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Thin film encapsulation for the organic light-emitting diodes display via atomic layer deposition
摘要： Organic light-emitting diodes (OLEDs) have aroused great attention due to the advantages of high luminescent efficiency, fast response time, wide viewing angle, and the compatibility with the flexible electronics. Nevertheless, the organic luminescent materials are vulnerable to environment moisture/oxygen. Thus, how to protect the OLEDs from the ambient moisture/oxygen erosion is of great importance to ensure the stability and reliability. Thin film encapsulation (TFE) via atomic layer deposition (ALD) has emerged as a potential method to meet the encapsulation requirements of OLEDs due to its unique assets. In this review, the challenges of TFE, including pinholes, crystallization, cracks, and overheated, are introduced first. The ALD-based monolayer, composite structures, and hybrid laminates were developed to improve the barrier property, flexibility, and thermal conductivity. Besides, the ALD reactors and processes for TFE are also reviewed. Finally, the challenges remained and future development in the stabilization of OLEDs via ALD are also discussed.
关键词： flexible electronics,moisture barrier,OLED,thin film encapsulation,atomic layer deposition
更新于2025-09-16 10:30:52
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Grain Size Engineering of Ferroelectric Zr-doped HfO2 for the Highly Scaled Devices Applications
摘要： Ferroelectric Zr-doped HfO2 (HZO) is a promising candidate component for the future transistors and memory devices applications. To address the device-to-device variation in those highly scaled devices, the grain properties of 12-nm-thick HZO films are investigated and optimized by altering the atomic layer deposition (ALD) cycle ratio of HfO2 and ZrO2 at a constant Zr concentration. The largest remanent polarization 2Pr of 41 μC/cm2, refined average grain radius from 16.6 nm to 13 nm, and improved grain size distribution with the standard deviation reduced from 5 to 3.3 are realized by adjusting the ALD cycle ratio to 5/5. Furthermore, the possible underlying mechanisms for the ferroelectric behaviors and the growth modes of the HZO films deposited with various cycle ratios are demonstrated.
关键词： atomic layer deposition,scaling,Ferroelectric transistors,Zr-doped HfO2,grain size engineering
更新于2025-09-16 10:30:52