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Electric field assisted spray coated lead free bismuth iodide perovskite thin film for solar cell application
摘要： Solution-processed Methylammonium iodo bismuthate (MBI) perovskite solar cell is fabricated by spray technique with changed applied voltages from 0 to 1000 V during the deposition of MBI thin film. The morphology and surface roughness of MBI films are influenced significantly by the electric field during film deposition. It is attributed to improve the atomization of spray droplets due to process of coulomb fission. The surface roughness of MBI film is reduced from 39 to 19 nm with increased applied voltages during the deposition from 0 V and 1000 V, respectively. A strong absorption band is observed ～500 nm for all MBI films. The MBI perovskite solar cell is showed enhancement in the efficiency with the maximum current density 2.33 mA/cm2 at 1000 V applied voltage during the deposition. The improvement in photovoltaic characteristics with applied voltage during the film deposition is attributed to the formation of more uniform film with improved surface morphology and roughness, resulting in efficient electron transfer and reduced recombination of charge carrier at grain boundaries.
关键词： Methyl ammonium bismuth (III) iodide,Spray deposition,Perovskite solar cell,Electric filed,Lead free perovskite
更新于2025-11-21 11:18:25
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A carbon nanotube-iron (III) oxide nanocomposite as a cathode in dye-sensitized solar cells: Computational modeling and electrochemical investigations
摘要： Here is the evaluating result on the applicability of the multi-walled carbon nanotube (MWCNT) and a-iron (III) oxide (a-Fe2O3) nanocomposite as a cathode material in dye-sensitized solar cells (DSCs). The morphology and the structure of the MWCNT/a-Fe2O3 nanocomposite have characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray elemental mapping analysis. Moreover, the electrochemical performance of the nanocomposite has studied toward the activity of Iˉ/I3ˉ redox couple which represents high current density, low peak-to-peak separation, low charge-transfer resistance, and almost 100% stable response signal. Furthermore, the computational modeling employing the molecular mechanics (MM) and the restricted-Hartree Fock/semiempirical parameterization (RHF/PM6) methods reveals that the highest occupied molecular orbital (HOMO), the lowest unoccupied molecular orbital (LUMO), and the HOMO-LUMO energy gap of the modeled nanocomposite are as (cid:1)6.88, (cid:1)3.62, and 3.26 eV, respectively. These properties match with the electronic-level domino of the DSC structure. Finally, the DSC device has fabricated using N719-sensitized TiO2 photoanode and MWCNT/a-Fe2O3 counter electrode, presenting the open-circuit potential, the short-circuit current density, and the power-conversion ef?ciency of 0.7 V, 20.37 mA cmˉ2, and 6.0%, respectively. This study successfully approves the potential of the nanocomposite as a cathode material in iodine-based dye-sensitized solar cells.
关键词： Dye-sensitized solar cell,Nanocomposite,Carbon nanotube,Molecular mechanics,RHF/PM6,Iron (III) oxide
更新于2025-11-21 11:18:25
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Hydrophilic Quantum Dots Functionalized with Gd(III)-DO3A Monoamide Chelates as Bright and Effective T1-weighted Bimodal Nanoprobes
摘要： Magnetic resonance imaging (MRI) is a powerful non-invasive diagnostic tool that enables distinguishing healthy from pathological tissues, with high anatomical detail. Nevertheless, MRI is quite limited in the investigation of molecular/cellular biochemical events, which can be reached by fluorescence-based techniques. Thus, we developed bimodal nanosystems consisting in hydrophilic quantum dots (QDs) directly conjugated to Gd(III)-DO3A monoamide chelates, a Gd(III)-DOTA derivative, allowing for the combination of the advantages of both MRI and fluorescence-based tools. These nanoparticulate systems can also improve MRI contrast, by increasing the local concentration of paramagnetic chelates. transmetallation assays, optical characterization, and relaxometric analyses, showed that the developed bimodal nanoprobes have great chemical stability, bright fluorescence, and high relaxivities. Moreover, fluorescence correlation spectroscopy (FCS) analysis allowed us to distinguish nanosystems containing different amounts of chelates/QD. Also, inductively coupled plasma optical emission spectrometry (ICP – OES) indicated a conjugation yield higher than 75%. Our nanosystems showed effective longitudinal relaxivities per QD and per paramagnetic ion, at least 5 times [per Gd(III)] and 100 times (per QD) higher than the r1 for Gd(III)-DOTA chelates, suitable for T1-weighted imaging. Additionally, the bimodal nanoparticles presented negligible cytotoxicity, and efficiently labeled HeLa cells as shown by fluorescence. Thus, the developed nanosystems show potential as strategic probes for fluorescence analyses and MRI, being useful for investigating a variety of biological processes.
关键词： Quantum Dots,Gd(III)-DO3A monoamide chelates,Fluorescence,MRI,Bimodal nanoprobes
更新于2025-11-21 11:08:12
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A red fluorescent BODIPY probe for iridium (III) ion and its application in living cells
摘要： A new red fluorescent probe 1 based on BODIPY skeleton has been successfully synthesized through introduction of 2-(thiophen-2-yl) quinoline moiety at meso- and 3-position, which exhibits excellent optical performance, including high fluorescence quantum yield, large pseudo Stokes’ shift as well as high selectivity and sensitivity towards iridium (III) ion in aqueous solution and in living cells.
关键词： iridium (III) ion probe,fluorescence imaging,BODIPY probe
更新于2025-11-21 11:08:12
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Strategies towards rational design of gold(iii) complexes for high-performance organic light-emitting devices
摘要： Gold(iii) complexes are attractive candidates as phosphorescent dopants in organic light-emitting devices for high-luminance full-colour displays. However, no data on the stability of such devices have been reported to date. Through rational molecular design and synthesis, we have successfully generated a new class of cyclometalated gold(iii) C^C^N complexes with tunable emission colours spanning from sky-blue to red. These complexes exhibit high photoluminescence quantum yields of up to 80% in solid-state thin films, excellent solubility and high thermal stability. Solution-processable and vacuum-deposited organic light-emitting devices based on these complexes operate with external quantum efficiencies of up to 11.9% and 21.6%, respectively, and operational half-lifetimes of up to 83,000 h at 100 cd m?2.
关键词： operational stability,phosphorescent dopants,organic light-emitting devices,cyclometalated,gold(iii) complexes,C^C^N complexes
更新于2025-11-19 16:56:35
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Effect of HCl Cleaning on InSb-Al<sub>2</sub>O<sub>3</sub> MOS Capacitors
摘要： In this work, the role of HCl treatments on InSb surfaces and InSb-Al2O3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy (XPS) measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl3 which is not present for similar HCl-water processes. Furthermore, this InCl3 layer desorbs from the surface between 200°C and 250°C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using atomic layer deposition (ALD) of Al2O3 at 200°C and 250°C and the presence of InCl3 was associated with a +0.79 V flatband voltage shift. The desorption of the InCl3 layer at 250°C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (Dit) and hysteresis voltage (VH). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.
关键词： surface cleaning,III-V,ALD,Al2O3,InSb,dielectric interface,MOSCAP,HCl
更新于2025-11-14 17:28:48
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Extraction of High-Quality Quantum Dot Photocatalysts via Combination of Size Selection and Electrochemiluminescence
摘要： Quantum dots (QDs) represent one of the most promising photocatalytic systems for solar hydrogen production. Tremendous works have been devoted to the design of QDs photocatalysts, but their further development is limited by the unwanted mix of high- and low-quality QDs with different activities. With multinary Ag-In-Zn-S (AIZS) QDs as an example, here, we present a simple method for the extraction and screening of efficient photocatalysts by combination of gradient centrifugation and electrochemiluminescence (ECL). With controllable introduction of poor solvent, the crude QDs were separated into five individual samples by gradient centrifugation, from which ECL tests were performed to get the surface state information for photocatalyst screening. By the combination of size-selective centrifugation and ECL screening, we were able to get the high-activity component (AIZS-#4), which achieved 1.68 mmol·g?1 h?1, 6 times higher than that of the initial AIZS QDs. This work provides an alternative useful pathway for obtaining high-quality QD photocatalysts, beyond pursuing of perfect synthetic conditions.
关键词： size selection,electrochemiluminescence,quantum dots,photocatalysis,I-III-VI
更新于2025-11-14 15:32:45
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Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power
摘要： GaN thin film was successfully produced on n-Si(100) substrate by RF magnetron sputter under different RF power. Experimental measurement techniques such as UV/Vis spectroscopy, field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and Micro-Raman Spectroscopy were used to research effects of Radio Frequency power on physical properties of produced thin film. It has been found that produced thin film was polycrystalline structure with (100) and (110) planes of hexagonal GaN from X-ray diffraction measurement result. It also proved that increasing RF power gives rise to deterioration in crystal quality of GaN thin film. Reason of this deterioration was discussed. It has been achieved that increasing RF power has resulted in decreasing optical band gap energy of GaN thin film. Reasons for these changes in optical band gap energy were explained. It was seen that some thin films were grown as layer-plus-island mode (Stranski–Krastanov growth mode) and others were grown as layer-by-layer growth mode (Frank van der Merwe mode) from AFM analysis. It has been found that increasing RF power has resulted in improvement of surface morphology of thin film from field emission scanning electron microscopy analysis. However, reaching RF power to 125 W leads to start to deteriorate of surface of GaN thin film. The reasons for this have been discussed. E1(TO) transverse optical phonon mode of hexagonal GaN with different intensity was detected from Micro-Raman Spectroscopy measurement. The reasons for this difference have been discussed. It was concluded that RF power has played a significant role in growing high quality GaN thin film. Morphological, structural, and optical properties of GaN thin film were enhanced by controlling RF power, making them a potential candidate for LED, solar cell, diode application.
关键词： Thin film,III-nitride,RF magnetron sputter,Semiconductor,GaN
更新于2025-11-14 15:25:21
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Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool
摘要： We fabricated high-electron-mobility transistor structures with InAlN as a barrier layer on 8- or 6-inch Si substrates by using a recently developed high-speed-wafer-rotation single-wafer MOCVD tool. It has been reported that Ga inclusion in the InAlN layer causes serious problems in the control of group III metal composition in some cases, but the samples grown using the tool exhibited an InAlN layer with an abrupt interface and almost no Ga inclusion. Excellent in-wafer uniformity, repeatability, and wafer-to-wafer uniformity of device structure are also reported. The results shown in this paper indicate high performance of the tool in the real production of devices.
关键词： A3. Metalorganic vapor phase epitaxy,B1. Nitrides,B2. Semiconducting III-V materials,B3. High electron mobility transistors
更新于2025-09-23 15:23:52
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Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator
摘要： Energy harvesters that scavenge biomechanical energy are promising power supply candidates for wearable and implantable electronics. Of the most widely used energy harvesters, piezoelectric generators can generate more electric charge than their triboelectric counterparts with similar device size, thus are more suitable to make compact wearable devices. However, most high-power piezoelectric generators are made from lead zirconate titanate, making them undesirable for wearable applications due to the toxic lead element. In this study, a flexible piezoelectric generator (F-PEG) is fabricated with chemically stable and biocompatible Group-III-nitride (III-N) thin film by a layer-transfer method. The III-N thin-film F-PEG can generate an open-circuit voltage of 50 V, a short-circuit current of 15 μA, and a maximum power of 167 μW at a load resistance of 5 M?. Applications of the III-N thin-film F-PEG are demonstrated by directly powering electronics such as light-emitting diodes and electric watches, and by charging commercial capacitors and batteries to operate an optical pulse sensor. Furthermore, the III-N thin-film F-PEG shows good durability and a stable output after being subjected to severe buckling tests of over 30,000 cycles.
关键词： flexible,piezoelectric generators,thin film,III-nitride,self-powered system,biocompatible
更新于2025-09-23 15:23:52