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Optically Tunable Field Effect Transistors with Conjugated Polymer Entailing Azobenzene Groups in the Side Chains
摘要： Semiconducting conjugated polymers with photoswitching behavior are highly demanded for field-effect transistors (FETs) with tunable electronic properties. Herein a new design strategy is established for photoresponsive conjugated polymers by incorporating photochromic units (azobenzene) into the flexible side alkyl chains. It is shown that azobenzene groups in the side chains of the DPP (diketopyrrolopyrrole)-quaterthiophene polymer (PDAZO) can undergo trans/cis photoisomerization in fully reversible and fast manner. Optically tunable FETs with bistable states are successfully fabricated with thin films of PDAZO. The drain-source currents are reduced by 80.1% after UV light irradiation for ≈28 s, which are easily restored after further visible light irradiation for ≈33 s. Such fast optically tunable FETs are not reported before. Moreover, such current photomodulation can be implemented for multiple light irradiation cycles with good photofatigue resistance. Additionally, thin film charge mobility of PDAZO can be reversibly modulated by alternating UV and visible light irradiations. On the basis of theoretical calculations and GIWAXS data, it is hypothesized that the dipole moment and configuration changes associated with the trans-/cis-photoisomerization of azobenzene groups in PDAZO can affect the respective intra-chain and inter-chain charge transporting, which is responsible for the optically tunable behavior for FETs with thin films of PDAZO.
关键词： side alkyl chains,semiconducting polymers,thin-film field-effect transistors,azobenzene,photoresponsiveness
更新于2025-09-19 17:15:36
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Underlayer dependence of electric field effect on magnetic anisotropy and its volatility in CoFeB/MgO structures
摘要： We report the dependence of voltage-controlled magnetic anisotropy (VCMA) effect and its volatility on an underlayer (UL) in CoFeB/MgO structures. For a sample with Ta or Pt UL, the VCMA effect occurs when the applied gate voltage (Vg) exceeds a critical value, and it persists even after removing Vg. This is in contrast to the volatile VCMA effect and its linear dependence on Vg in a sample with W UL. Furthermore, we demonstrate that the volatility of the VCMA effect can be modified by introducing a Ta/W bilayer, enabling arbitrary control of the magnetic properties via VCMA effect.
关键词： Voltage controlled magnetic anisotropy,Underlayer dependence,Perpendicular magnetic anisotropy,Electric-field effect
更新于2025-09-19 17:15:36
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Bias-stress effects in diF-TES-ADT field-effect transistors
摘要： A systematic analysis of the bias-stress effects in solution-processed organic field-effect transistors is reported. Difluoro 5,11-bis(triethylsilylethynyl) anthradithiophene, a high-performance molecular semiconductor, forms a charge-transport channel and is coupled with injection contacts made of Au, Ag, or Cu. The electrode metal is found to not only greatly affect the switching performances but also drive the response of transistors to the extended applications of gate voltage. The observations are put into the framework of contact-limited transistor model, which holistically assesses the material, geometry, and stress-related contributions.
关键词： Bias stress,Device physics,Contact resistance,DiF-TES-ADT,Organic field-effect transistors
更新于2025-09-19 17:15:36
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Naphthalene Diimide-Based Terpolymers with Controlled Crystalline Properties for Producing High Electron Mobility and Optimal Blend Morphology in All-Polymer Solar Cells
摘要： We report a series of new n-type random copolymers (P(NDI2OD-Se-Th x) where x = 0, 0.5, 0.7, 0.8, 0.9, 1.0) consisting of naphthalene diimide (NDI), selenophene-2,2’-thiophene (Se-Th), and seleno[3,2-b]thiophene (SeTh) to demonstrate their use in producing efficient all-polymer solar cells (all-PSCs) and organic field-effect transistors (OFETs). To investigate the effect of polymer crystallinity on the performance of all-PSCs and OFETs, we tuned the composition of the Se-Th and SeTh moieties in the P(NDI2OD-Se-Th x) polymers, resulting in enhanced crystalline properties with higher Se-Th ratio. Thus, the OFET electron mobility was increased with higher Se-Th ratio, exhibiting the highest value of 1.38×10?1 cm2 V?1 s?1 with P(NDI2OD-Se-Th 1.0). However, the performance of all-PSCs based on PBDB-T:P(NDI2OD-Se-Th x) showed a non-linear trend relative to the Se-Th ratio and the performance was optimized with P(NDI2OD-Se-Th 0.8) exhibiting the highest power coversion efficiency of 8.30%. This is attributed to the stronger crystallization-driven phase separation in all-polymer blends for higher Se-Th ratio. At the optimal crystallinity of P(NDI2OD-Se-Th 0.8) in all-PSCs, the degree of phase separation, domain purity and the electron mobility were optimized, resulting in enhanced charge generation and transport. Our works describe structure-property-performance relationships to design effective n-type polymers in terms of crystalline and electrical properties suitable for both efficient OFETs and all-PSCs.
关键词： organic field-effect transistors,seleno[3,2-b]thiophene,polymer crystallinity,n-type random copolymers,selenophene-2,2’-thiophene,charge generation,all-polymer solar cells,charge transport,naphthalene diimide
更新于2025-09-19 17:13:59
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Describing broadband terahertz response of graphene FET detectors by a classical model
摘要： Direct power detectors based on field-effect transistors are becoming widely used for terahertz applications. However, accurate characterization at terahertz frequencies of such detectors is a challenging task. The high-frequency response is dominated by parasitic coupling and loss associated with contacts and overall layout of the component. Moreover, the performance of such detectors is complicated to predict since many different physical models are used to explain the high sensitivity at terahertz frequencies. This makes it hard to draw important conclusions about the underlying device physics for these detectors. For the first time, we demonstrate accurate and comprehensive characterization of graphene field-effect transistors from 1 GHz to 1.1 THz, simultaneously accessing the bias dependence, the scattering parameters, and the detector voltage responsivity. Within a frequency range of more than 1 THz, and over a wide bias range, we have shown that the voltage responsivity can be accurately described using a combination of a small-signal equivalent circuit model, and the second-order series expansion terms of the nonlinear dc I ? V characteristic. Without bias, the measured low-frequency responsivity was 0.3 kV/W with the input signal applied to the gate, and 2 kV/W with the input signal applied to the drain. The corresponding cut-off frequencies for the two cases were 140 GHz and 50 GHz, respectively. With a 300-GHz signal applied to the gate, a voltage responsivity of 1.8 kV/W was achieved at a drain-source current of 0.2 mA. The minimum noise equivalent power was below 30 pW/√Hz in cold mode. Our results show that detection of terahertz signals in graphene field-effect transistors can be described over a wide frequency range by the nonlinear carrier transport characteristic obtained at static electrical fields. This finding is important for explaining the mechanism of detection and for further development of terahertz detectors.
关键词： classical model,field-effect transistors,scattering parameters,graphene,broadband characterization,terahertz detectors
更新于2025-09-19 17:13:59
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Monolithic Plasmonic Waveguide Architecture for Passive and Active Optical Circuits
摘要： Guided-wave plasmonic circuits are promising platforms sensing, interconnection, and quantum applications in the subdiffraction regime. Nonetheless, the loss-confinement trade-off remains a collective bottleneck for plasmonic-enhanced optical processes. Here, we report a unique plasmonic waveguide architecture that can alleviate such trade-off and improve the efficiencies of plasmonic-based emission, light-matter-interaction, and detection simultaneously. Specifically, record experimental attributes such as normalized Purcell factor approaching 104, 10 dB amplitude modulation with <1 dB insertion loss and fJ-level switching energy, and photodetection sensitivity and internal quantum efficiency of ?54 dBm and 6.4% respectively have been realized within our amorphous-based, coupled-mode plasmonic structure. The ability to support multiple optoelectronic phenomena while providing performance gains over existing plasmonic and dielectric counterparts offers a clear path toward reconfigurable, monolithic plasmonic circuits.
关键词： plasmonics,epsilon-near-zero,field-effect modulator,Purcell factor,Schottky photodetector
更新于2025-09-19 17:13:59
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Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
摘要： This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.
关键词： ion implantation,phosphorus,point defects,laser annealing,photoluminescence,aluminum,TEM,Metal Oxide Semiconductor Field Effect Transistor (MOSFET),SiC,Raman
更新于2025-09-19 17:13:59
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Direct bandgap opening in sodium-doped antimonene quantum dots: an emerging 2D semiconductor
摘要： Antimonene, which is similar to two-dimensional (2D) phosphorene, has recently gained considerable attention because of its thickness-dependent energy band structure. However, unlike phosphorene, undoped antimonene has an indirect bandgap only at the monolayer limit. In this work, an electrochemical sodium doping strategy was proposed to tune the energy band structure of antimonene. First-principles calculations indicated that a direct bandgap of 0.88 eV formed in 5.55% Na-doped antimonene, while undoped antimonene had an indirect bandgap of 2.38 eV. Optical and electrical measurements provided clear evidence for such a reconstruction of the energy band. We experimentally demonstrated p-type conduction in antimonene quantum dots (QDs)-based field-effect transistors. Furthermore, the induced direct bandgap enabled electric-field control of the surface-enhanced Raman scattering on plasmonic-free antimonene QDs. This allowed for detection of Rhodamine 6G with a detection limit down to the sub-femtomolar level. Our study highlights the potential of doped antimonene as an emerging 2D semiconductor.
关键词： Direct Bandgap,Quantum Dots,Antimonene,Field-Effect Transistors,Surface-Enhanced Raman Scattering,Sodium Doping
更新于2025-09-19 17:13:59
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Laser annealing towards high-performance monolayer MoS2 and WSe2 field effect transistors
摘要： The transition metal dichalcogenides (TMDCs) have been intensively investigated as one of promising nanoelectronic and optoelectronic materials. However, the pervasive adsorbates on the surface of monolayer TMDCs, including oxygen and water molecules from the ambient environments, predominately degrade the device performance, thus hindering the precise applications. In this work, we report the effect of laser irradiation on the transport and photoresponse of monolayer MoS2 and WSe2 devices, and this laser annealing process is demonstrated as one straightforward approach to remove the physically adsorbed contaminations. Compared with vacuum pumping and in-situ thermal annealing treatments, the field-effect transistors after the laser annealing show more than one order of magnitude higher on-state current, and no apparent degradation of device performance at low temperature. The mobility of monolayer WSe2 devices can be enhanced by 3-4 times, and for single-layered MoS2 devices with the commonly used SiO2 as the back-gate, the mobility increases by 20 times, reaching 37 cm2 ? V?1 ? s?1. The efficient cleaning effect of the laser annealing is also supported by the reduction of channel and contact resistances revealed by the transmission line experiment. Further, the enhanced photocurrent by a factor of 10 has been obtained in the laser annealed device. These findings pave the way for the high-performance monolayer TMDCs-based electronic and optoelectronic devices with the clean surface and intrinsic properties.
关键词： TMDCs,monolayer MoS2,photoresponse,field-effect transistors,laser annealing,monolayer WSe2
更新于2025-09-19 17:13:59
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Highly sensitive ultraviolet photodetectors based on single wall carbon nanotube-graphene hybrid films
摘要： An ultraviolet (UV) photodetector was fabricated by depositing single wall carbon nanotubes (SWCNTs) on the surface of a graphene field-effect transistor (GFET) with buried gate electrode structure. A photoresponsivity with a value as high as 204.5 A/W was obtained under a 365-nm LED light illumination with an incident power of 3.9 μW. The photoresponsivity of our photodetector is about four orders higher in magnitude than that of a recently reported UV photodetector, which is based on CNTs/graphene hybrid films with a photoresponsivity of 2.3 × 10?2 A/W. With increasing the source-drain voltage of the SWCNTs modified GFET, the photoresponsivity can be further enhanced. In addition, the photoresponsivity can also be tuned by applying a small gate voltage. This work provides a simple and feasible method to create highly sensitive UV photodetectors based on all-carbon hybrid films, which are important in many applications such as military surveillance, biomedical instrumentation and environmental monitoring.
关键词： Ultraviolet,Graphene field effect transistor,Photodetector,Single wall carbon nanotubes
更新于2025-09-19 17:13:59