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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - GeSn Lasers with Uniaxial Tensile Strain in the Gain Medium
摘要： We use strain redistribution to locally enhance strain in GeSn layers. We demonstrate uniaxial tensile strain in microbridges with lasing cavities tuned over the 3.1 to 4.6μm range, and thresholds lower than 10 kW.cm-2 at 25K, in pulsed excitation mode. Laser operation vanishes around 273K.
关键词： laser,tunability,strain,GeSn
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Design and Analysis of Tensile-Strained GeSn Mid-Infrared Photodetectors on Silicon
摘要： We present a design of tensile-strained GeSn photodetectors on silicon substrate with SiN stressors. The strained band structure, absorption coefficient, and optical responsivity are calculated and discussed.
关键词： silicon photonics,tensile strain,photodetectors,mid-infrared,GeSn
更新于2025-09-12 10:27:22
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Poly‐GeSn Junctionless Thin‐Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing
摘要： High-performance polycrystalline GeSn (poly-GeSn) junctionless thin-film transistors (JL-TFTs) are proposed and fabricated at low process temperatures. Poly-GeSn thin films with a Sn fraction of 4.8% are prepared using cosputtering and pulsed laser annealing (PLA) techniques. The ultra-rapid nonequilibrium thermodynamic process with 25 ns PLA renders a good crystal GeSn thin film at a low temperature. The ION/IOFF ratio increases by three orders of magnitude with GeSn channel thickness varying from 60 to 10 nm, suggesting that switch-off current is dominated by depletion width. A superior effective mobility of 54 cm2 V-1 s-1 is achieved for the JL-TFT with a 10 nm-thick GeSn film as a consequence of gate/channel interface passivation by oxygen plasma.
关键词： pulsed laser annealing,junctionless thin-film transistors,GeSn
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Toward Monolithic Optoelectronic Integration of GeSn Photodiode and FinFET on GeSnOI Platform
摘要： We demonstrated a GeSn-on-insulator platform for monolithic optoelectronic integration for applications at 2 μm wavelength. Both GeSn lateral p-i-n photodetector and p-channel fin field-effect transistor were realized using this novel architecture.
关键词： optoelectronic integration,2 μm,GeSn
更新于2025-09-11 14:15:04
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Ge<inf>0.9</inf>Sn<inf>0.1</inf> p-i-n Photodiode with Record-High Responsivity at Two-Micron-Wavelength
摘要： We demonstrate a Ge0.9Sn0.1 photodiode on Si substrate with record-high responsivity Rop of 0.17 A/W at wavelength λ of 2 μm. Fourier-transform infrared spectroscopy (FTIR) reveals that the detector has a cutoff wavelength λc at ~2.6 μm.
关键词： SWIR,CVD,photodiode,GeSn
更新于2025-09-11 14:15:04
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The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
摘要： A type-I band Ge0.75Sn0.25/Ge0.682Sn0.158Si0.16 QD heterostructure is proposed for mid-IR light sources. The effects of strain and composition are theoretically investigated to optimize the band offset of the direct band gap GeSn QDs. It is found that the introduction of tensile strain and Si incorporation in the barrier layers are effective to increase the band offset in the conduction band. Besides, the band offset is expected to increase with the increase of Sn composition in QDs and the size of QDs.
关键词： mid-IR light source,GeSn QD
更新于2025-09-11 14:15:04
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The Growth of GeSn Layer on Patterned Si Substrate by MBE Method
摘要： A method to grow high quality GeSn alloy strips with assistance of Sn has been developed, and strips grow laterally on Si(111) substrates in molecular beam epitaxy (MBE) chamber. The GeSn heteroepitaxial strip has been proven to be of good crystalline quality without threading dislocations (TDs) by transmission electron microscopy (TEM). In the meantime, introduction of Sn into Ge was investigated by Raman spectra and energy-dispersive X-ray spectroscopy (EDS). In addition, size and density of GeSn strip can be adjusted by changing the growth conditions, and Sn concentration varies approximately linearly against the epitaxial temperature. Moreover, the Hall mobility of GeSn alloy strips at room temperature was 336 cm2·V-1·s-1 and the carrier concentration was 7.9×1012 cm?3 by Hall measurement. Therefore, the proposed method provides an easy technique to grow high quality GeSn materials for Si-based photonics and microelectronics applications.
关键词： GeSn alloy,microelectronics,photonics,MBE,Si substrate
更新于2025-09-11 14:15:04
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Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped <i>n</i> <sup>+</sup> -Ge <sub/> 1? <i>x</i> </sub> Sn <sub/><i>x</i> </sub> structure
摘要： We examined the formation of Ni(Ge1?xSnx)/n+-Ge1?xSnx contacts with Sb- and P-doped Ge1?xSnx epitaxial layers with various electron concentrations and investigated the crystalline structure and contact resistivity. The fully maintained strain and no serious degradation of the crystallinity were confirmed in the Sb-doped Ge1?xSnx layer after Ni stanogermanidation, while the Sn content slightly decreased. The contact resistivity of Ni(Ge1?xSnx)/Sb-doped Ge1?xSnx interface achieved a value lower than the P-doped samples, in spite of high Sn contents with a Ni germanidation temperature of 350 °C. The ultra-low contact resistivity as low as 10?9 Ω cm2 was obtained with the Ni(Ge1?xSnx)/Sb-doped Ge0.935Sn0.065 sample with an electron concentration of 1.8×1020 cm?3.
关键词： contact resistivity,n-type doping,GeSn
更新于2025-09-09 09:28:46
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Noise Analysis of Group IV Material-Based Heterojunction Phototransistor for Fiber-Optic Telecommunication Networks
摘要： This paper presents an analytical study of noise behavior and spectral responsivity of Ge1?xSnx alloy-based heterojunction phototransistors (HPTs) for different Sn compositions and base doping concentrations. The structure consists of n-Ge/p-Ge1?xSnx layers pseudomorphically grown on Si substrate via Ge virtual substrate, compatible with complementary metal-oxide-semiconductor technology. The high absorption coefficient of the alloy in base significantly improves signal-to-noise ratio in the high-frequency region, leading to efficient photodetection in the C- and L-bands of fiber-optic telecommunication window. A comparison is made between the theoretical findings for GeSn HPTs and the available data for currently employed group III–V compound-based HPTs, to examine if GeSn-based HPT can be a good alternative.
关键词： GeSn alloys,absorption coefficient,spectral responsivity,heterojunction phototransistor,signal-to-noise ratio
更新于2025-09-09 09:28:46
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GeSn surface preparation by wet cleaning and in-situ plasma treatments prior to metallization
摘要： GeSn, a group IV binary alloy, is currently of high interest. Its use is envisioned in two kinds of applications: (i) as a source/drain compressive stressor in order to boost the hole mobility in short gate length Ge channel p-type MOSFETs [1] and (ii) as a direct-band-gap material for Si photonics, provided that the Sn content is higher than 10%, typically [2]. However, the fabrication of GeSn-based components faces major technological issues. First of all, as the lattice mismatch between Sn and Ge is large (14%) and the solubility of Sn in Ge low at thermodynamic equilibrium (< 1%), specific conditions have to be used for the epitaxial growth of high Sn content GeSn layers. Moreover, the fabrication of efficient ohmic contacts to receive and deliver power and signals is challenging. Ni-stanogermanides are currently under investigation in order to benefit from low contact resistivity (Rc) and sheet resistance (Rsh) in GeSn-based devices. The surface preparation of such metastable alloys will then be an unavoidable step. Whatever the targeted application, wet cleaning is indeed mandatory to remove particles, organic materials, metallic impurities and native oxides from the surface. Literature data on GeSn surface preparation prior to metallization is currently scarce [3], [4]. Based on the existing knowledge on pure germanium, we will likely have to cope with a high dissolution in oxidant solutions (GeO2 dissolution in water) and unstable surface preparations (high reactivity upon air and oxygen exposure). Ex-situ wet cleanings will likely suffer from a fast native oxide regrowth on the GeSn surface. In-situ plasma treatments in a chamber connected to the metal deposition chamber itself, i.e. without any air break, should enable to get rid of that problem. In this work, after a characterization of the native oxide formed upon air exposure of Ge0.85Sn0.15 alloys, we investigate the impact of i) wet chemistries, ii) plasma treatments and iii) “wet + plasma” combinations on GeSn surface oxide removal.
关键词： surface preparation,GeSn,metallization,wet cleaning,plasma treatments
更新于2025-09-09 09:28:46