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All organics thin film flexible photodetector based on C<sub>60</sub> modified PEDOT:PSS
摘要： In organic electronics, the use of self-assembled monolayer dielectric functional groups is considered an effective surface modification strategy that can significantly improve device performance. A flexible polymer (PEDOT:PSS) photodetector on the substrate polyimide (PI) with broadband response (450 nm~980 nm) and high response (0.56 A/W) is reported, which is superimposed on the surface by small molecule (C60) thermal evaporation. In addition, the planeness of organic semiconductor and the overall performance of organic thin film photodetector can be improved significantly by using small molecule modified polymer thin film, the response of small molecule modified organic device is improved by an order of magnitude, which provides a guarantee for better application of organic thin films in circuits. Moreover, the device has strong flexibility stability performance, which can meet the requirements of flexible stability of future photoelectric devices.
关键词： organic thin film,high responsivity,broadband response,Photodetector,flexibility
更新于2025-09-23 15:21:01
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High Responsivity and High Rejection Ratio Self-Powered Solar-Blind Ultraviolet Photodetector Based on PEDOT:PSS/β-Ga2O3 Organic/Inorganic p-n Junction
摘要： A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p-n junction. Owing to the high crystalized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cut off wavelength at 255 nm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R245 nm /R280 nm) of 103, which is two orders of magnitude larger than the average value ever reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow band-pass response of only 17 nm in width. This work might be of great value in developing high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
关键词： Self-Powered,PEDOT:PSS/β-Ga2O3,Plasmonics and Optoelectronics,Organic/Inorganic p-n Junction,Energy Conversion and Storage,High Rejection Ratio,High Responsivity,Solar-Blind Ultraviolet Photodetector
更新于2025-09-19 17:13:59
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Ultra-high responsivity (>12.34 kA/W) of ga-in bimetallic oxide nanowires based deep-UV photodetector
摘要： This work demonstrates the application of bimetallic oxide nanowires (NWs) for deep UV-photodetectors. The Ga-In based NWs has been fabricated by low cost and scalable electrospinning method. The fabrication process includes the synthesis of NWs on cleaned quartz substrate using electrospinning and followed by Al (100 nm)/Au (20 nm)-electrode deposition on top of the fine sheet of NWs. Owing to the very large surface to volume ratio, high porosity, photon trapping, and simultaneous front and back illumination, the fabricated bimetallic photodetector has shown a record ultra-high responsivity and the photo-dark current ratio of ~12348 AW-1 and ~298846 at 1 V bias respectively. The device has further revealed high detectivity ~3.27 × 1015 mHz0.5W-1 and external quantum efficiency ~7.73 × 106 %.
关键词： GaInO3,nanowires,bimetallic,ultra-high responsivity,UV-photodetector,electrospinning
更新于2025-09-19 17:13:59
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Plasmonic Nanocavities for High-Responsivity and Broadband Terahertz Detection
摘要： We present a high-responsivity and broadband photoconductive terahertz detector based on a plasmonic nanocavity, which enables high quantum efficiency and ultrafast operation without using short-carrier-lifetime substrates. We experimentally demonstrate that a time-domain spectroscopy setup employing the presented detector can offer 102 dB dynamic range over 0.1-4.5 THz.
关键词： high-responsivity,photoconductive detector,plasmonic nanocavity,broadband,terahertz
更新于2025-09-12 10:27:22
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A High‐Performance Solution‐Processed Organic Photodetector for Near‐Infrared Sensing
摘要： Sensitive detection of near-infrared (NIR) light enables many important applications in both research and industry. Current organic photodetectors suffer from low NIR sensitivity typically due to early absorption cutoff, low responsivity, and/or large dark/noise current under bias. Herein, organic photodetectors based on a novel ultranarrow-bandgap nonfullerene acceptor, CO1-4Cl, are presented, showcasing a remarkable responsivity over 0.5 A W?1 in the NIR spectral region (920–960 nm), which is the highest among organic photodiodes. By effectively delaying the onset of the space charge limited current and suppressing the shunt leakage current, the optimized devices show a large specific detectivity around 1012 Jones for NIR spectral region up to 1010 nm, close to that of a commercial Si photodiode. The presented photodetectors can also be integrated in photoplethysmography for real-time heart-rate monitoring, suggesting its potential for practical applications.
关键词： high responsivity,bulk heterojunctions,photodetectors,organic photodiodes,near-infrared
更新于2025-09-12 10:27:22
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Interface Defect Engineering for Improved Graphene-Oxide-Semiconductor Junction Photodetectors
摘要： The deeply depleted graphene-oxide-semiconductor (D2GOS) junction detector provides an effective architecture for photodetection enabling direct readout of photogenerated charge. Due to an inherent gain mechanism proportional to graphene’s high mobility (μ), this detector architecture exhibits large responsivities and signal-to-noise ratios (SNR). The ultimate sensitivity of the D2GOS junction detector may be limited, however, due to the generation of dark charge originating from interface states at the semiconductor/dielectric junction. Here, we examine the performance limitations caused by dark charge and demonstrate its mitigation via the creation of low interface defect junctions enabled by surface passivation. The resulting devices exhibit responsivities exceeding 10,000 A/W—a value which is 10x greater than that of analogous devices without the passivating thermal oxide. With cooling of the detector, the responsivity further increases to over 25,000 A/W, underscoring the impact of surface generation on performance and thus the necessity of minimizing interfacial defects for this class of photodetector.
关键词： 2D Materials,Photodetector,Interface Defects,GOS Junction,2D Detector,Graphene,High Responsivity
更新于2025-09-11 14:15:04