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Preparation and magnetic properties for FeSe <sub/><i>x</i> </sub> /Bi <sub/>2</sub> Se <sub/>3</sub> bilayer films on silicon substrates by RF magnetron sputtering
摘要： FeSex/Bi2Se3 bilayer thin films were grown by RF magnetron sputtering on silicon substrates with different thicknesses of Bi2Se3 and the structural, morphological and magnetic properties were investigated. FeSex/Bi2Se3 bilayer films had Bi2Se3 crystallites oriented with c-axis perpendicular to the film plane, and exhibited weak ferromagnetism at low temperature due to the ferromagnetic FeSe2. The thickness of Bi2Se3 layer affected both crystalline structure of Fe–Se layer and the magnetic property.
关键词： magnetic phase,RF magnetron sputtering,paramagnetism,Topological insulator,bilayer films
更新于2025-09-19 17:15:36
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Thermal Stability of WB2 and W–B–N Films Deposited by Magnetron Sputtering
摘要： The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB2-type WB2 and W–B–N (5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB (700 °C) and Mo2B5-type WB2 (1000 °C) are successively observed in the AlB2-type WB2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization effect of a-BN phase, and the hardness increases to 34.1 GPa first due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB2 and the W–B–N films deposited on WC–Co substrates, both the WB2 and W–B–N films react with the YG8 (WC–Co) substrates leading to the formation of CoWB, CoW2B2 and CoW3B3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the film failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB2 films shows a slight decrease compared with that of the deposited WB2 films.
关键词： AlB2-type WB2 films,Thermal stability,W–B–N films,Magnetron sputtering,Mechanical properties
更新于2025-09-19 17:15:36
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Spark plasma sintering of Sb2Se3 sputtering target towards highly efficient thin film solar cells
摘要： Antimony selenide (Sb2Se3) is a potential absorber material for environment-friendly and cost-efficiently photovoltaics due to its material advantages and superior optoelectronic properties. In this work, we proposed a facile and versatile method of ball milling followed with spark plasma sintering (SPS) to prepare high-quality Sb2Se3 sputtering target. Then the highly crystalline Sb2Se3 thin film consisted of large crystal grains can be prepared by using radio frequency (RF) magnetron sputtering with an additional post-selenization heat treatment. An efficient substrate structured Sb2Se3 thin film solar cell with configuration of Mo/Sb2Se3/CdS/ITO/Ag was fabricated and a champion device with highly interesting power conversion efficiency (PCE) of 5.08% has been achieved. Superior device performances are closely related to the Sb2Se3 absorber layer with benign growth orientation and the Sb2Se3/CdS heterojunction interface with smooth contact, which induced less recombination loss. The combined features of homemade sputtering target and advantageous thin film preparation technology further demonstrated its attractive application potential in thin film photovoltaic scenarios.
关键词： Sb2Se3,Post-selenization,Sputtering target,Magnetron sputtering,Spark plasma sintering,Thin film solar cells
更新于2025-09-19 17:13:59
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Inert gas cluster formation in sputter-deposited thin film CdTe solar cells
摘要： Magnetron sputtering is widely used for thin film deposition because it is a relatively low temperature process which also produces films with excellent uniformity. Unfortunately, in its use for the deposition of thin film CdTe devices, the inert working gas from the magnetron can incorporate into the film during the growth process and aggregate into large subsurface clusters during postprocessing. The gas clusters often occur at the CdS/CdTe interface causing delamination and blisters up to about 30 μm in diameter are readily observable on the film’s surface. The surface blisters are observed after postprocessing with CdCl2 at an elevated temperature but smaller inert gas clusters of several nanometres in diameter can be observed using high resolution transmission electron microscopy before the CdCl2 treatment. In this paper, these effects are investigated both experimentally and using molecular dynamics modelling. Some suggestions are also made as to how the effect might be minimised and higher efficiency solar devices fabricated.
关键词： Solar Cells,Cadmium Telluride,Argon bubbles,Molecular Dynamics,High Resolution Electron Microscopy,Magnetron Sputtering
更新于2025-09-19 17:13:59
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WS2: A New Window Layer Material for Solar Cell Application
摘要： Radio frequency (RF) magnetron sputtering was used to deposit tungsten disulfide (WS2) thin films on top of soda lime glass substrates. The deposition power of RF magnetron sputtering varied at 50, 100, 150, 200, and 250 W to investigate the impact on film characteristics and determine the optimized conditions for suitable application in thin-film solar cells. Morphological, structural, and opto-electronic properties of as-grown films were investigated and analyzed for different deposition powers. All the WS2 films exhibited granular morphology and consisted of a rhombohedral phase with a strong preferential orientation toward the (101) crystal plane. Polycrystalline ultra-thin WS2 films with bandgap of 2.2 eV, carrier concentration of 1.01 × 1019 cm?3, and resistivity of 0.135 Ω-cm were successfully achieved at RF deposition power of 200 W. The optimized WS2 thin film was successfully incorporated as a window layer for the first time in CdTe/WS2 solar cell. Initial investigations revealed that the newly incorporated WS2 window layer in CdTe solar cell demonstrated photovoltaic conversion efficiency of 1.2% with Voc of 379 mV, Jsc of 11.5 mA/cm2, and FF of 27.1%. This study paves the way for WS2 thin film as a potential window layer to be used in thin-film solar cells.
关键词： WS2,window layer,thin-film solar cells,CdTe,RF magnetron sputtering
更新于2025-09-19 17:13:59
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An effective combination reaction involved with sputtered and selenized Sb precursors for efficient Sb2Se3 thin film solar cells
摘要： Sputtering followed by post annealing is extensively used for fabrication of copper indium gallium selenide (CIGS), copper zinc tin sulfide (CZTS) and copper zinc tin sulfur selenide (CZTSSe) thin film solar cells. In this work, Sb2Se3 as an emerging alternative absorber was fabricated by an effective combination reaction of annealing sputtered Sb metallic precursors under Se vapor. Self-assembled growth of Sb2Se3 thin films consist of large grains that across the whole films have been successfully fulfilled via this combination reaction. Sb2Se3 thin films with desired orientation, stoichiometric composition and high-quality Sb2Se3/CdS heterojunction could be achieved once a proper selenization scenario was employed. Further, by selecting Sb films as precursors, the thickness of interfacial MoSe2 located at the back-contact region can be well controlled, leading to a significant enhancement in fill factor (FF) of the devices. This is in good accordance with our DFT simulation results which demonstrated Se vapor would be prone to react with the Sb lattice thermodynamically and thus limiting the thickness of the MoSe2 layer. Finally, a champion Sb2Se3 thin film solar cell with power conversion efficiency of 6.15% was achieved, which represents the highest efficiency of sputtered Sb2Se3 solar cells.
关键词： DFT calculations,Sb2Se3 solar cell,Magnetron sputtering,Selenization,Combination reaction
更新于2025-09-19 17:13:59
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Effect of working pressure on the properties of RF sputtered SnS thin films and photovoltaic performance of SnS-based solar cells
摘要： Tin sulfide (SnS) thin films were deposited with a single SnS target by radio frequency magnetron sputtering while varying the working pressure (0.6 Pa to 2.6 Pa), and the structural, chemical, electricelectrical and optical properties of the SnS thin films were investigated. X-ray diffraction results showed that all the SnS thin films had a (111) plane preferred growth orientation, and X-ray photoelectron spectroscopy verified that a SnS thin film was grown with an orthorhombic crystal structure, having the binding energy of 324.5 eV. Due to a long wavelength shift in the transmittance spectrum, the optical band gap decreased from 1.56 eV to 1.47 eV. A SnS-based conventional structure solar cell (Al/ITO/i-ZnO/CdS/SnS/Mo/SLG), prepared with a SnS absorption layer and deposited at a working pressure of 2.0 Pa, achieves the highest power conversion efficiency of 0.58%. It is confirmed that this result reveal to very high efficiency compared to other reports with conventional structure.
关键词： thin films,Tin sulfide,radio frequency magnetron sputtering,single target,SnS based solar cells,working pressure
更新于2025-09-19 17:13:59
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Quantum dot light-emitting diodes with an Al-doped ZnO anode
摘要： A study of a hybrid ZnCdSeS/ZnS quantum dot light-emitting diodes (QLEDs) device fabricated with indium tin oxide (ITO)-free transparent electrodes is presented. Al-doped zinc oxide (AZO) prepared by magnetron sputtering is adopted in anode transparent electrodes for green QLEDs with different sputtering pressures. The Kelvin probe force microscopy measurement shows that AZO has a work function of approximately 5.0 eV. The AZO/poly(ethylene-dioxythiophene)/polystyrenesulfonate (PEDOT:PSS) interface can be adjusted by the sputtering pressures, which was confirmed by the hole-only devices. The AZO films with low surface roughness can form a good AZO/PEDOT:PSS interface, which can increase the holes’ injection, and result in improved charge balance. The maximum current efficiency, luminance and external quantum efficiency of the optimized QLEDs devices under a sputtering pressure of 1 mTorr can achieve values of 50.75 cd/A, 102,500 cd/m2 and 12.94%, respectively.
关键词： radio-frequency magnetron sputtering,Al-doped zinc oxide,quantum light-emitting diode,transparent electrode
更新于2025-09-19 17:13:59
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Preparation of Plasmonic Au-TiO2 Thin Films on a Transparent Polymer Substrate
摘要： In this work, plasmonic thin films composed of Au nanoparticles embedded in a TiO2 matrix were prepared in a transparent polymer substrate of poly(dimethylsiloxane) (PDMS). The thin films were deposited by reactive DC magnetron sputtering, and then subjected to heat treatment up to 150 °C in order to promote the growth of the Au nanoparticles throughout the TiO2 matrix. The transmittance spectrum of the thin films was monitored in situ during the heat treatment, and the minimum time required to have a defined localized surface plasmon resonance (LSPR) band was about 10 min. The average size of Au nanoparticles was estimated to be about 21 nm—the majority of them are sized in the range 10‐40 nm, but also extend to larger sizes, with irregular shapes. The refractive index sensitivity of the films was estimated by using two test fluids (H2O and DMSO), and the average value reached in the assays was 37.3 ± 1.5 nm/RIU, resulting from an average shift of 5.4 ± 0.2 nm. The results show that it is possible to produce sensitive plasmonic Au‐TiO2 thin films in transparent polymer substrates such as PDMS, the base material to develop microfluidic channels to be incorporated in LSPR sensing systems.
关键词： localized surface plasmon resonance,gold nanoparticles,thin films,poly(dimethylsiloxane) substrate,reactive magnetron sputtering,titanium dioxide
更新于2025-09-19 17:13:59
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Radiation hardness investigation of heterojunction solar cell structures with TCO antireflection films
摘要： Phosphorus doped silicon carbide film as emitter in heterojunction structure was deposited on p-type Si(100) wafers at various deposition conditions by means of PECVD technology using silane (SiH4), methane (CH4), hydrogen (H2) and phosphine (PH3, 2 vol.% in H2) gas as precursors. ITO or IZO film was RF magnetron sputtered on top of the different P doped a-SiC:H(n) film. Irradiation of structures with Xe ions to total fluency 5x1011 cm-2 was performed at room temperature. Influence of phosphorus concentration and type of transparent conducting oxide was investigated. A deeper insight on the impact of irradiation on the electrophysical properties of sample was obtained by the analysis of complex impedance spectra.
关键词： Xe ions irradiation,RF magnetron sputtering,TCO antireflection films,radiation hardness,impedance spectra,heterojunction solar cell,PECVD
更新于2025-09-19 17:13:59