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oe1(光电查) - 科学论文

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?? 中文（中国） ▾

  • Investigation of Electrical Characteristics on LaAlO <sub/>3</sub> /ZrO <sub/>2</sub> /IGZO TFTs with Microwave Annealing

    摘要： Conventional thin film transistor suffered from high threshold voltage, poor subthreshold swing, and high operation voltage. These shortcomings make the traditional thin film transistor does not meet the needs with the high-performance, high-resolution, low temperature and energy conservation nowadays. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is promising to replace conventional furnace annealing and applied in the investigation. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. With adjusting the power/time of microwave annealing, the effect on electrical characteristics of a-IGZO TFTs is investigated.

    关键词： ZrO2,Microwave Annealing,a-IGZO TFTs,LaAlO3

    更新于2025-09-23 15:23:52

  • Hybrid microwave annealing for fabrication of more efficient semiconductor photoanodes for solar water splitting

    摘要： Hybrid microwave annealing (HMA) is proposed as an alternative to conventional thermal annealing (CTA) in a furnace to fabricate efficient semiconductor photoelectrodes for solar water splitting. Thus the effects of HMA are investigated in comparison with CTA using spinel zinc ferrite as an example. The ZnFe2O4 photoanodes fabricated by HMA with a graphite susceptor provide less defective surface, better structural ordering and smaller feature size than photoanodes prepared by CTA. Besides, HMA does not impair conductivity of the F:SnO2 glass substrate. All these positive factors of HMA leads to ~4 times higher photocurrents at 1.23 VRHE and lowered onset potential by ~100 mV under 1-sun irradiation of an optimized ZnFe2O4 photoanode relative to that fabricated by CTA. The HMA could be an effective generic method to fabricate efficient photoelectrodes based on refractory semiconductors replacing incumbent CTA.

    关键词： Conventional thermal annealing,ZnFe2O4,Hybrid microwave annealing,Photoelectrochemical water splitting

    更新于2025-09-10 09:29:36

  • The effects of rapid thermal annealing and microwave annealing on the electrical properties of ZrO2 metal-insulator-metal capacitors

    摘要： The effects of different rapid thermal annealing (RTA) and microwave annealing (MWA) on the electrical behaviors of ZrO2 metal-insulator-metal (MIM) capacitors were studied in detail. The maximum capacitance density was achieved at 1400 W for MWA, i.e. ~29.29 fF/μm2 increased by ~40% compared with that of the un-annealed capacitors. For the capacitors under RTA at 370 oC, equivalent to the ambient of the MWA at 1400 W, the capacitance density is ~28.04 fF/μm2. Moreover, the leakage current density of ZrO2 MIM capacitors for MWA at 1400 W and RTA at 370 oC are determined to be about 3.55×10-7 A/cm2 and 1.88×10-6 A/cm2 at the applied voltage of -1.5 V, respectively. Finally, the possible mechanisms of the improved electrical properties of ZrO2 MIM capacitors through MWA were proposed.

    关键词： ZrO2,Rapid thermal annealing,Metal-insulator-metal Capacitors,Microwave annealing

    更新于2025-09-10 09:29:36

  • Reusable surface-enhanced Raman substrates using microwave annealing

    摘要： In this work, we report the fabrication of large-scale homogeneous surface-enhanced Raman scattering (SERS) substrates using a microwave annealing (MWA) process on Ag thin films on silicon, using a typical low-cost domestic microwave oven, avoiding the use of chemicals and stabilizing agents, or time-consuming and expensive approaches. We provide evidence that in 5–15 s, uniform and reproducible SERS substrates of several centimeter squares can be grown, providing a Raman signal enhancement of five orders of magnitude, for an incident Raman laser with an intensity as low as ~ 0.035 mW, against the characterization of Rhodamine 6G, which is a standard test molecule for SERS. Moreover, we tested the reusability of the fabricated MWA SERS substrates under conditions as tough as ultrasonic sonication in isopropyl alcohol and acetone for 15 min, respectively, and we demonstrate that our SERS substrates can be efficiently reused for more than six times after sonication, which is quite critical since it minimizes the cost of the procedure to minimum.

    关键词： Surface-enhanced Raman scattering (SERS),Ag thin films,Rhodamine 6G (R6G),Reusable substrates,Microwave annealing (MWA)

    更新于2025-09-10 09:29:36

  • The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors

    摘要： Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, ?exible, transmission, and uniformity. The thin ?lm transistors (TFTs) with a-IGZO thin ?lm as active layer perform higher ?eld-effect mobility (>10 cm2/V · S), larger I on/I off ratio (>106), smaller subthreshold swing and better stability against electrical stress. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is applied to improve the device reliability in the investigation. With adjusting the parameter of microwave annealing, the effect on reliability characteristics of a-IGZO TFTs is studied.

    关键词： Microwave Annealing,Stretched-Exponential Model,IGZO TFTs,Positive Bias Stress

    更新于2025-09-04 15:30:14