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Copper electrodeposition on silicon electrodes
摘要： A two-step process is reported for the electrochemical deposition of copper layers on n-type silicon substrates using an acidic copper sulphate solution without addition of additives and no light assistance. Metal layers were generated on electrodes with different crystal orientations. The process consists of a combination of two very common techniques: chronoamperometry and pulse plating. The former technique is applied to obtain an instantaneous nucleation on the working electrode. Therefore, a large amount of metal nuclei is formed on the substrate before the pulse technique starts. The latter is, then, used to grow the particles previously generated and form a homogeneous metal layer with full coverage onto the semiconductor electrodes. The potential magnitudes are carefully chosen in line with energy levels observed at the semiconductor-electrolyte interface and were also calculated in this work.
关键词： silicon coating,seedless electroplating,copper plating,semiconductor-electrolyte interface,pulse plating
更新于2025-09-23 15:22:29
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Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
摘要： The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully ?lled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention was paid to the samples with di?erent seed layer structures. These samples were fabricated by di?erent sputtering and treatment approaches, and accompanied with various electroplating pro?le adjustments. The images were observed and characterized by X-ray equipment and a scanning electron microscope (SEM). The results show that optimized sputtering and electroplating conditions can help improve the quality of TSVs, which could be interpreted as the interface e?ect of the TSV structure.
关键词： TSVs,interface e?ect,electroplating,sputtering
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019 - Boston, MA, USA (2019.6.2-2019.6.7)] 2019 IEEE MTT-S International Microwave Symposium (IMS) - 3D Printed Slotted Rectangular Hollow Waveguides
摘要： This work proposes an approach to generate high performance rectangular hollow waveguides for applications in E- and W-Band by stereolithography 3D plastic printing and subsequent copper electroplating. In order to improve the metal deposition process, large and densely positioned sidewall gaps are identified as a key parameter in the design for manufacturing of such transmission lines with the proposed fabrication strategy. Measurements of fabricated prototypes achieve an overall attenuation of about 8 to 10 dB/m over wide bandwidths and thus, perform in similar ranges as compared to conventionally manufactured waveguides. Despite the large sidewall gaps, radiation leakage has been measured in an order of -50 dB, suggesting feasibility to many practical applications. The proposed approach offers fundamental contributions to the design for manufacturing of 3D printed waveguide systems and increases the applicability of conventional electro-plating processes.
关键词： rectangular waveguides,3D printing,electroplating,Additive manufacturing
更新于2025-09-16 10:30:52
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Integral fabrication of terahertz hollow-core metal rectangular waveguides with a combined process using wire electrochemical micromachining, electrochemical deposition, and selective chemical dissolution
摘要： The application requirements of terahertz hollow-core metal rectangular waveguides with a high-working frequency have become increasingly urgent with the rapid development of terahertz technology. Integral fabrication of terahertz hollow-core metal rectangular waveguides can improve considerably the transmission performance of terahertz signals. However, with current manufacturing techniques, the high-precision integral fabrication of high-working-frequency terahertz hollow-core metal rectangular waveguides is difficult owing to their characteristically small end face size and the need for strict dimensional accuracy and high internal surface quality. In this paper, an innovative combined process of wire electrochemical micromachining, electrochemical deposition, and selective chemical dissolution is proposed firstly to overcome this puzzle. Taking the fabrication of an integral 1-THz hollow-core metal rectangular waveguide as an example, the manufacturing methods involved in each step are described particularly, together with the corresponding experimental investigations. With the end face size of 127 μm × 254 μm, edge radius less than 5 μm, and internal surface roughness less than 0.08 μm, the experimental results satisfy the design requirements for a 1-THz hollow-core metal rectangular waveguide. This study demonstrates that the proposed combined process is flexible, controllable, and suitable for the high-precision integral fabrication of high-working-frequency terahertz hollow-core metal rectangular waveguides.
关键词： Wire electrochemical micromachining,Copper micro-electroforming,Gold micro-electroplating,Terahertz hollow-core metal rectangular waveguide,High-precision integral fabrication
更新于2025-09-12 10:27:22
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In Situ Monitoring of the Antibacterial Activity of a Copper–Silver Alloy Using Confocal Laser Scanning Microscopy and pH Microsensors
摘要： The antibacterial efficacy of a copper–silver alloy coating under conditions resembling build up of dry surface bacterial biofilms is successfully demonstrated according to US EPA test methods with a ≥99.9% reduction of test organisms over a 24 h period. A tailor-made confocal imaging protocol is designed to visualize in situ the killing of bacterial biofilms at the copper–silver alloy surface and monitor the kinetics for 100 min. The copper–silver alloy coating eradicates a biofilm of Gram-positive bacteria within 5 min while a biofilm of Gram-negative bacteria are killed more slowly. In situ pH monitoring indicates a 2-log units increase at the interface between the metallic surface and bacterial biofilm; however, the viability of the bacteria is not directly affected by this raise (pH 8.0–9.5) when tested in buffer. The OH? production, as a result of the interaction between the electrochemically active surface and the bacterial biofilm under environmental conditions, is thus one aspect of the contact-mediated killing of the copper–silver alloy coating and not the direct cause of the observed antibacterial efficacy. The combination of oxidation of bacterial cells, release of copper ions, and local pH raise characterizes the antibacterial activity of the copper–silver alloy-coated dry surface.
关键词： bacterial biofilms,confocal laser scanning microscopy,copper–silver alloy,electroplating,antibacterial activity
更新于2025-09-11 14:15:04
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AIP Conference Proceedings [AIP Publishing INTERNATIONAL SYMPOSIUM ON GREEN AND SUSTAINABLE TECHNOLOGY (ISGST2019) - Perak, Malaysia (23–26 April 2019)] INTERNATIONAL SYMPOSIUM ON GREEN AND SUSTAINABLE TECHNOLOGY (ISGST2019) - Advances with resist-free copper plating approaches for the metallization of silicon heterojunction solar cells
摘要： The metallization of silicon heterojunction (SHJ) solar cells by selective Cu electroplating without any resist-mask is in development. A thin multi-functional PVD Cu-Al stack is deposited to mask the ITO and to promote homogeneous current distribution for simultaneous bifacial plating. This investigation reviews different approaches to perform the Al-patterning – by printing of a metallic ink, laser metal transfer or selective metal etching – to produce a metal-seed susceptible to plate selectively against the self-passivated Al surface. This NOBLE – native oxide barrier layer for selective electroplated, metallization allows reaching a first promising efficiency of 20.0% on a full area SHJ solar cell with low contact resistivity to ITO. This simultaneous bifacial metallization features several advantages: low temperature processing, high metal conductivity of plated copper, no organic masking and low material costs (almost Ag-free).
关键词： bifacial plating,silicon heterojunction solar cells,resist-free,metallization,PVD Cu-Al stack,Cu electroplating
更新于2025-09-11 14:15:04
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Preparation of Conductive Polyester Fibers Using Continuous Two-Step Plating Silver
摘要： Polyester ?bers are used in various ?elds, due to their excellent mechanical and chemical stability. However, the lack of conductivity limits their application potential. In order to prepare conductive polyester ?bers, silver is one of the most widely used materials to coat the surface of the ?bers. This work aimed to prepare silver-coated polyester ?bers by a continuous two-step method, which combined the operations of continuous electroless plating and electroplating. Meanwhile, we designed specialized equipment for the continuous plating of silver on the polyester ?bers under a dynamic condition. The mechanical property, washability, electrical resistivity, and electrical conductivity of the resultant conductive polyester ?bers obtained from different silver-plating conditions were also characterized. The results demonstrated that the conductive ?bers prepared by continuous two-step silver plating equipment, had good electrical conductivity with better mechanical properties and washability.
关键词： electroplating,polyester ?ber,continuous two-step silver plating,electroless plating,dynamic condition
更新于2025-09-09 09:28:46
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Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor
摘要： In this study, the ?lling process of high aspect ratio through-silicon-vias (TSVs) under dense conditions using the electroplating method was ef?ciently achieved and optimized. Pulsed power was used as the experimental power source and the electroplating solution was prepared with various additive concentrations. Designed control variable experiments were conducted to determine the optimized method. In the control variable experiments, the relationship of multiple experimental variables, including current density (0.25–2 A/dm2), additive concentration (0.5–2 mL/L), and different shapes of TSVs (circle, oral, and square), were systematically analyzed. Considering the electroplating speed and quality, the in?uence of different factors on experimental results and the optimized parameters were determined. The results showed that increasing current density improved the electroplating speed but decreased the quality. Additives worked well, whereas their concentrations were controlled within a suitable range. The TSV shape also in?uenced the electroplating result. When the current density was 1.5 A/dm2 and the additive concentration was 1 mL/L, the TSV ?lling was relatively better. With the optimized parameters, 500-μm-deep TSVs with a high aspect ratio of 10:1 were fully ?lled in 20 h, and the via density reached 70/mm2. Finally, optimized parameters were adopted, and the electroplating of 1000-μm-deep TSVs with a diameter of 100 μm was completed in 45 h, which is the deepest and smallest through which a three-dimensional inductor has ever been successfully fabricated.
关键词： electroplating,high aspect ratio,through-silicon-vias (TSV),three-dimensional (3D) inductor,control variable method
更新于2025-09-09 09:28:46
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Thermal Shock Performance of DBA/AMB Substrates Plated by Ni and Ni–P Layers for High-Temperature Applications of Power Device Modules
摘要： The thermal cycling life of direct bonded aluminum (DBA) and active metal brazing (AMB) substrates with two types of plating—Ni electroplating and Ni–P electroless plating—was evaluated by thermal shock tests between ?50 and 250 ?C. AMB substrates with Al2O3 and AlN fractured only after 10 cycles, but with Si3N4 ceramic, they retained good thermal stability even beyond 1000 cycles, regardless of the metallization type. The Ni layer on the surviving AMB substrates with Si3N4 was not damaged, while a crack occurred in the Ni–P layer. For DBA substrates, fracture did not occur up to 1000 cycles for all kind of ceramics. On the other hand, the Ni–P layer was roughened and cracked according to the severe deformation of the aluminum layer, while the Ni layer was not damaged after thermal shock tests. In addition, the deformation mechanism of an Al plate on a ceramic substrate was investigated both by microstructural observation and ?nite element method (FEM) simulation, which con?rmed that grain boundary sliding was a key factor in the severe deformation of the Al layer that resulted in the cracking of the Ni–P layer. The fracture suppression in the Ni layer on DBA/AMB substrates can be attributed to its ductility and higher strength compared with those of Ni–P plating.
关键词： DBA,cracking,Ni–P electroless plating,Ni electroplating,reliability,grain boundary sliding,AMB,thermal shock test,roughness,metallization
更新于2025-09-09 09:28:46
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Electrochemical and in situ SERS study of the role of an inhibiting additive in selective electrodeposition of copper in sulfuric acid
摘要： The role of an inhibiting additive in selective copper (Cu) deposition was investigated using linear sweep and cyclic voltammetry and in situ SERS. Both the normalized SERS peak intensity of Basic Red 12 and the Cu deposition current showed hysteresis. These results indicate that Basic Red 12 desorbs or decomposes on the surface during electrodeposition of Cu. Therefore the concentration of Basic Red 12 on the patterned area decreases more than that on the flat area. This inhomogeneity of concentration leads to the preferential growth of Cu on the patterned area.
关键词： overburden,copper electroplating,selective deposition,anisotropic deposition,copper interconnects
更新于2025-09-09 09:28:46