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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Lossless Scalable Optical Switch Design in a SiP/InP Hybrid Platform
摘要： Lossless and distortion-free experimental operation of an 8×8 SiP/InP hybrid optical switch is demonstrated. The design employs an 8-channel InP gain block added to a SiP switch to compensate for its high insertion loss.
关键词： photonic integrated circuits,optical switches,indium phosphide,silicon photonics,hybrid integrated circuits,Optical interconnects
更新于2025-09-16 10:30:52
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[IEEE 2019 Workshop on Recent Advances in Photonics (WRAP) - Guwahati, India (2019.12.13-2019.12.14)] 2019 Workshop on Recent Advances in Photonics (WRAP) - Commercial DVDs loaded with Femtosecond Laser Prepared Gold Nanoparticles as SERS Substrates
摘要： A source-synchronous interconnect using mode-division multiplexing (MDM) for potential use in on-chip applications is experimentally demonstrated using a 3-mode 750 μm Silicon photonics structure. Results are presented for simultaneous transmission of two data channels on two separate modes (bit error rate < 10?12 at 10 Gb/s) sampled by an optically forwarded clock sent on a third separate mode. Performance assessment of the mode assignment for the clock is presented. The investigation shows that an optimum clock placement is important at wavelengths where modal crosstalk is higher. For example, at 1553 nm, the clock’s jitter decreases from 45 ps down to 2.7 ps where the clock is encoded on a mode with high crosstalk (?18.6 dB) to one that has less crosstalk (?28.6 dB). At 1560 nm where modal crosstalk is better, the clock’s jitter is 2.6 ps (?27.8 dB crosstalk) and 1.1 ps (?34 dB crosstalk) without and with optimum clock placement, respectively. With proper clock to mode assignment, the optical interconnect becomes functional across an optical bandwidth of 11 nm enabling MDM–wavelength-division multiplexing architectures.
关键词： optical interconnects,mode-division multiplexing,source-synchronous links,Integrated optics
更新于2025-09-16 10:30:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Characteristics of Injection Microdisk Lasers with InGaAs/GaAs Quantum Well-Dots
摘要： Quantum dot (QD) based microdisk/microring lasers have attracted attention as promising candidates for on-chip optical interconnects since they offer small footprint, high-temperature stability and in-plane light emission. An important property required for a laser intended for optical communication is high-frequency direct modulation. Edge emitting QD-based lasers on GaAs demonstrated promising modulation characteristics with a -3 dB modulation bandwidth in excess of 7.4 GHz [1]. Meanwhile, there are practically no reports on the dynamic characteristics of QD-based microdisk/microring lasers. In the present work, we report on characteristics of microdisk lasers on GaAs substrates with diameters less than 30 μm. An ultra-dense (several 1011 cm-2) array of narrow-bandgap In-rich islands inside an In-depleted residual quantum well is used as the active region. These nanostructures are referred to as quantum well-dots (QWDs) [2] as their properties can be tuned from quantum well like to quantum dot like depending upon the composition and thickness of material deposited. Owing to a high density of the islands, a higher optical gain is achieved as compared to that of conventional In(Ga)As QDs, whereas the lateral carrier transport is suppressed as opposed to a quantum well. An epitaxial wafer was grown on an n+-GaAs(100)6o substrate by low pressure MOVPE using hydrogen as a carrier gas, arsine as a group V precursor, trimethylgallium, trimethylindium, and trimethylaluminum as group III precursors, silane and diethylzinc as n-type and p-type dopants. An Al0.34Ga0.66As/GaAs laser heterostructure comprises a 0.8 μm-thick GaAs separate confinement layer with 5 layers of QWDs formed by the deposition of 8 monolayers In0.4Ga0.6As and separated with 40 nm-thick GaAs spacers. Laser microresonators were formed by single-step photolithography and dry etching of 5.5 μm-high mesas with nearly vertical sidewalls. Ohmic contacts were formed with AgMn/NiAu and AuGe/Ni/Au metallizations upon the p+ GaAs cap layer and the n-doped GaAs substrate, respectively. The measurements were done at room temperature without external temperature stabilization and cooling. In a 30-μm diameter microdisk laser with InGaAs QWDs a high output power of 18 mW and a peak electrical-to-optical power conversion efficiency of 15 % were demonstrated. CW lasing was observed up to 110oC [3]. A maximum -3 dB modulation frequency of 5.9 GHz was found in the microdisk with a diameter less than 30 μm. To the best of our knowledge, these microlasers are the smallest QD microdisk/microring lasers, for which a direct modulation has been realized. Owing to a reduced cavity volume, a modulation current efficiency factor of 1.5 GHz/mA1/2 was estimated, and bias currents, at which the maximal modulation frequency is achieved is in the range of 30 mA (for comparison, MCEF of 0.38 GHz/mA1?2 and injected current of 86 mA was reported in [4]). The K-limited maximal frequency of 13 GHz was estimated from the modulation response analysis, whereas the experimentally measured –3 dB modulation frequency is 5.9 GHz. We suggest the bandwidth is limited by thermal effects or RC parasites, or a combination of those.
关键词： high-frequency direct modulation,microdisk lasers,optical interconnects,quantum well-dots,Quantum dot
更新于2025-09-12 10:27:22
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[IEEE 2018 Asia Communications and Photonics Conference (ACP) - Hangzhou (2018.10.26-2018.10.29)] 2018 Asia Communications and Photonics Conference (ACP) - A pair of integrated optoelectronic chips for optical interconnects
摘要： A pair of integrated optoelectronic chips based on VCSEL (Vertical-Cavity Surface-Emitting Laser) and PIN-PD is proposed for optical interconnects. The matched chips can realize bi-directional communications on a single fiber.
关键词： Optical interconnects,Optoelectronic integration,Laser,RCE-PD,VCSEL
更新于2025-09-12 10:27:22
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Monolithic integration of VCSEL and coupled cavity RCEPD for short-reach single-fiber bi-directional optical interconnects
摘要： In this paper, we propose a monolithic integration of vertical-cavity surface-emitting laser (VCSEL) and coupled cavity resonant cavity enhancement photodiode (ccRCEPD). Based on this structure, a couple of matched chips is designed for single fiber bidirectional optical interconnects. That type of integration can easily put VCSEL and (photodiode) PD into one package, which not only reduces the costs of the device packages and even cut the costs of the optical system like beam splitter, but also can save the space in optical transceiver to make it tight. These chips’ VCSELs show a threshold current of 1.6 mA and 1.7 mA, and a slope efficiency of 0.74 W/A and 0.97 W/A. VCSELs’ modulation bandwidth is 9.5 GHz and 11.0 GHz, and PDs’ response bandwidth is 10 GHz. Furthermore, the modulation bandwidth can be higher if the material of the multiple quantum wells (MQWs) is transformed GaAs/AlGaAs to InGaAs/AlGaAs. And by optimizing, the 3dB bandwidth of PD will be higher.
关键词： ccRCEPD,bidirectional optical interconnects,VCSEL,monolithic integration,quantum wells
更新于2025-09-12 10:27:22
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Handbook of Graphene || Hybrid Graphene–Silicon Photonic and Optoelectronic Integrated Devices
摘要： Graphene, a monolayer of carbon atoms arranged in a honeycomb pattern, has many intriguing optical and electrical properties, providing us numerous applications in optoelectronics, nonlinear optics, and biochemical sensing. However, due to the atomic thickness of the material, light–matter interactions in graphene are intrinsically weak, which greatly limit its practical applications. To overcome this challenge, graphene-on-silicon photonic integrated circuits (PICs) have been proposed and demonstrated in recent years. In such PICs, the propagating light in silicon waveguides can strongly interact with the top-layer graphene through in-plane evanescent–field coupling. On the other hand, with unique properties in photonics and optoelectronics, graphene is expected to open a new avenue for the development of revolutionized on-chip applications, which cannot be precedent based on traditional silicon photonic technology. Therefore, this emerging area has attracted a great deal of attention. In this Chapter, we comprehensively introduce theoretical principles, fabrication processes, and applications of graphene-on-silicon PICs, and review recent research progress in this topic.
关键词： silicon photonics,optoelectronics,photonic integrated circuits,optical interconnects,biochemical sensing,Graphene,mid-infrared photonics,nonlinear optics
更新于2025-09-11 14:15:04
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Layout Model for Optical Interconnects Based on λ-Routing Grids and Topology Embeddings
摘要： Optical technology is being promoted as a highly promising, energy-efficient interconnect solution for next generation data centers and high performance computing systems. To overcome the energy and bandwidth limitations of electrical interconnects, all-optical technologies will be deployed at even shorter distances in the near future (board-to-board, on-board, and on-chip). On-board layout models for electronic interconnects, including the Thompson model [J. Comput. System Sci., vol. 28, no. 2, pp. 300, 1984], have long been proposed in the literature and corresponding area-efficient layouts have been found [Int. Conf. Parallel Processing, 2000] for a number of popular topologies. However, optical on-board interconnects have important differences from electrical ones, requiring the introduction of appropriate layout models for them. In this work, we look into the differences between electronic and optical on-board layouts, and propose optical interconnection layout models. In particular, we examine λ-routing grids for on-board optical interconnects in which routing options other than the traditional vertical–horizontal one are used (λ is the number of permitted routing options). We define 2D mesh topologies, based on the proposed λ-routing grids, achieving better bisection width and bisection width over area ratios than with rectangular (λ (cid:1) 2) grids. We also propose topologies with high connectivity degrees that fit the examined λ-routing grids and present their on-board layouts.
关键词： Topology layouts,Optical printed circuit boards,Optical interconnects,λ-routing
更新于2025-09-10 09:29:36
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Recent advances in optical technologies for data centers: a review
摘要： Modern data centers increasingly rely on interconnects for delivering critical communications connectivity among numerous servers, memory, and computation resources. Data center interconnects turned to optical communications almost a decade ago, and the recent acceleration in data center requirements is expected to further drive photonic interconnect technologies deeper into the systems architecture. This review paper analyzes optical technologies that will enable next-generation data center optical interconnects. Recent progress addressing the challenges of terabit/s links and networks at the laser, modulator, photodiode, and switch levels is reported and summarized.
关键词： data centers,photonic technologies,terabit/s links,optical interconnects,optical switches
更新于2025-09-10 09:29:36
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SiGe-Driven Hybrid-Integrated Silicon Photonic Link Using Optical-Domain Equalization
摘要： We report 50 and 60-Gb/s hybrid-integrated optical links in the O-band with CMOS photonic components driven by feed-forward silicon-germanium equalization. The link includes a segmented-electrode Mach Zehnder modulator and a Ge photodetector that provide high bandwidths and the potential for tight integration with control and monitoring electronics. The combination of these features enable the demonstration of a 60-Gb/s AC-coupled link and a 50-Gb/s DC-coupled link with BERs below 10-12 without the use of forward-error correction codes. This result provides a promising path toward extending speeds in latency sensitive optical links.
关键词： high-speed transmission,photonic integrated circuits,optical interconnects,Feed-forward equalization
更新于2025-09-10 09:29:36
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Low-power-consumption optical interconnect on silicon by transfer-printing for used in opto-isolators
摘要： On-chip optical interconnects heterogeneously integrated on silicon wafers by transfer-print technology are presented for the first time. Thin (<5 μm), micron sized light-emitting diodes (LEDs) and photo diodes (PDs) are prefabricated and transfer-printed to silicon wafer with polymer waveguides built between them. Data transmission with total power consumption as low as 1 mW, signal to noise ratio of >250 and current transfer ratio of 0.1% in a compact volume of <0.0004 mm3 are demonstrated. Experiment shows that the polymer waveguide between the LED and PD plays a key role in enhancing the data transmission efficiency. Reciprocal performance for bidirectional transmission is also achieved. The results show the potential for cost-effective and low profile form-factor on-chip opto-isolators.
关键词： Photonic integrated circuits,Heterogeneous integration,Optical interconnects
更新于2025-09-10 09:29:36