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Ultra-broadband, sensitive and fast photodetection with needle-like EuBiSe3 single crystal
摘要： Ultra-broadband photodetection has been a hot topic with the rapid development of materials science and the application requirements for communication, imaging and sensing. Photodetectors based on bandgap-independent bolometry are promising candidates for detection of light from the ultraviolet to the terahertz range. Here we report a photothermoelectric detector made of an alloy of EuBiSe3 single crystal. The device shows room-temperature self-powered photoresponse from ultraviolet (375 nm) to terahertz (163 μm) with nearly uniform sensitivity against wavelength and fast response speed. Thanks to the large thermoelectric power (Seebeck coefficient) of EuBiSe3, the photovoltage responsivity derived from the incident (not absorbed) power reaches as high as 1.69 V/W at 405 nm without any bias voltage, and exceeds 0.59 V/W even at terahertz frequencies, with noise-equivalent power below 1 nW/√Hz, which is 1–2 orders of magnitude lower than reported photothermoelectric detectors. The response time is around 200 ms, nearly two orders of magnitude faster than silicon-based heterojunction ultra-broadband photodetectors and on the same order as the millimetric-scale graphene- and carbon nanotube-based bolometric photodetectors. In addition, the as-grown EuBiSe3 crystal possesses a unique needle-like shape, intrinsically facilitating integration of the detector. Our work demonstrates that improved thermoelectric materials hold great promise for room-temperature high-performance broadband photodetection.
关键词： EuBiSe3,photothermoelectric,ultra-broadband,sensitive,photodetector,self-powered
更新于2025-09-23 15:22:29
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Embedded Near-Infrared Sensor with Tunable Sensitivity for Nanoscale CMOS Technologies
摘要： Near-infrared (NIR) sensors has become one of the key components in applications, such as temperature, proximity, and even ?ngerprint sensing. A novel full-CMOS (Complementary Metal-Oxide-Semiconductor) compatible near-infrared sensor is proposed and demonstrated in this article. This sensing device consists of a gateless transistor, enabling near-infrared photon absorption in the channel region. With a tunable channel barrier, this near-IR sensor also features a dynamic photo-response with an extending sensing range up to 60 dB.
关键词： full-silicon NIR photodetector,near-infrared sensing,CMOS process compatible
更新于2025-09-23 15:22:29
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A method to extend wavelength into middle-wavelength based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector
摘要： A method to extend the operating wavelength of the interband transition quantum well photodetector from extended short-wavelength IR to middle-wavelength infrared has been introduced. In the modified InAsSb quantum well, GaSb is replaced with AlSb/AlGaSb, the valence band of barrier material is lowered, the first restricted energy level (E1) is higher than the valence band of barrier material, the energy band structure forms type-II structure. The photocurrent spectral manifested that the fabricated photodetector exhibited a response range from 1.9 μm to 3.2 μm with two peaks at 2.18 μm and 3.03 μm at 78 K.
关键词： energy band calculation,InAsSb/AlSb/AlGaSb quantum well,interband transition,photodetector
更新于2025-09-23 15:21:01
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Extremely Low Dark Current and Detection Range Extension of Ga2O3 UV Photodetector using Sn Alloyed Nanostructures
摘要： A unique metal-semiconductor-metal (MSM) photodetector has been fabricated using Sn incorporation in Ga2O3 forming SnxGa1-xO nanostructures (Ns) with platinum (Pt) metal as contacts. The mixed nanostructures (MNs) has been attributed to an increment in the detection range of UV (254 – 302 nm) with ultra-low dark current, hence a potential device in the field of long range deep-UV detector. SnxGa1-xO (Ns) are deposited on c-plane sapphire using low-pressure chemical vapour deposition (LPCVD). From the X-ray diffraction results, existence both SnxGa1-xO and tetragonal SnO2 MNs are confirmed. The XRD peak shifts in SnxGa1-xO is attributed to the integration of Sn with Ga forming SnxGa1-xO alloy with x to be ~7.3% determined from the Vegard’s law. The FESEM images show the thick diameter wire-shaped nanostructures. The absorption spectra show a trace of two absorption edges corresponding to both SnxGa1-xO and SnO2 Ns. Photo to dark current ratio (PDCR) of the fabricated photodetector is large (103) at 2 V bias with fast fall time of 0.18 s. The detector reveals self-powered behaviour also with PDCR > 104 at 0 V bias. The dark current is ultra-low (13 pA at 5 V) due to high barrier height of Pt and the UV detection range has been extended from 254 – 302 nm with a very small drop in PDCR owing to incorporation of Sn.
关键词： LPCVD,Nanostructures,Photodetector,Gallium Oxide
更新于2025-09-23 15:21:01
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Enhanced Absorptivity of Quantum Dot Infrared Photodetector by Introducing of Metal Nanostructure Layer
摘要： Quantum dot infrared photodetector (QDIP) shows more superior characteristics; however, the low absorption rate is still the fundamental factor restricting the performance of the detector. So in our paper, the QDIP is improved by introducing the metal structure with the strips and holes to increase absorptivity. The results demonstrate that the enhanced QDIP can greatly improve the photon absorptivity up to 98.92% as a result of the local coupling surface plasmon effect, which is 1.23 times than that of the conventional photodetectors without the metal array structures.
关键词： Quantum dot infrared photodetector,Surface plasmon,Metal
更新于2025-09-23 15:21:01
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Fe doped ZnO/BiVO4 heterostructure based large area, flexible, high performance broadband photodetector with ultrahigh quantum yield
摘要： Pristine ZnO has been widely explored for UV photodetectors; however it’s utility in broadband photodetectors is still an impediment due to absorbance in UV region only with low quantum efficiency and responsivity that can be accredited to high recombination rate of photo generated charge carriers. To address this issue, we report Fe metal doped 2D ZnO thin films through band gap engineering and 1D electrospun mixed inorganic monoclinic BiVO4 nanofibers heterostructure on ITO coated PET substrate based broadband photodetector (PD) with ultra-high responsivity and EQE values in comparison to PDs fabricated using expensive cleanroom techniques. BiVO4 plays the dual role of captivating photons in the visible and NIR regions and creating local electric fields at the interface of Fe doped ZnO (FZO)-BiVO4 heterostructure which helps in separation of electron-hole pairs. The robustness of the flexible PD was further examined under repeated conditions of bending cycles (upto 500) yielding stable response. The responsivity values obtained for UV, Visible and NIR lights are 7.35 A/W, 3.8 A/W and 0.18 A/W with very high EQE values of 2501.7 %, 851.2 % and 28.3 % respectively. The facile and cost-effective fabrication of the device with high performance gives a new approach for developing flexible electronics and high-performance optoelectronics devices.
关键词： Heterostructure,Broadband photodetector,Fe doped ZnO,BiVO4,ultrahigh quantum yield
更新于2025-09-23 15:21:01
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Analysis on different detection mechanisms involved in ZnO-based photodetector and photodiodes
摘要： The present study reports on the comparison between the ultraviolet (UV) light detection mechanisms in ZnO-based photodetectors and ZnO/PEDOT:PSS hybrid photodiodes. Using spray pyrolysis method, ZnO thin films were deposited upon glass substrates. The deposition temperature was varied from 350 to 425 °C and the physical properties of ZnO thin films were investigated. The structural analysis reveals that all the prepared ZnO thin films have a preferred orientation along the (002) plane with hexagonal wurtzite structure. The morphological analysis reveals that the grains are uniformly distributed. Electrical properties reveal that the ZnO thin film deposited at 425 °C shows a higher carrier concentration of 3.76 × 1016 cm?3 with low electrical resistivity value of 2.59 × 102 ? cm. For fabrication of UV photodetectors, the optimum ZnO layer with good electrical and optical property was deposited on ITO substrate with substrate temperature maintained at 425 °C. For the fabrication of hybrid UV photodiodes, poly (3,4 ethylene dioxythiophene):poly (styrene sulphonate) (PEDOT:PSS) and zinc oxide (ZnO) was used as the hole and electron transporting layers, respectively. The current–voltage (I–V) and photoresponse switching characteristics under UV light of the fabricated ZnO-based photodetector and photodiodes were studied and the detection mechanisms of such devices were analysed. It was observed that the ZnO-based photodiodes show higher photoresponsivity (R) value of 0.25 A/W with fast photoresponse switching speed.
关键词： UV light detection,PEDOT:PSS,ZnO,photodetector,spray pyrolysis,photodiodes
更新于2025-09-23 15:21:01
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High-performance and Flexible CsPbBr3UV-vis Photodetectors Fabricated via Chemical Vapor Deposition
摘要： Inorganic perovskite cesium lead halide (CsPbBr3) has attracted considerable attention because of its particularly excellent optoelectronics properties and high stability in humidity environments. Here, highly crystalline CsPbBr3 films with different morphologies and grain sizes were prepared via a one-step low pressure chemical vapor deposition (CVD). The structure-activity relationship between film microstructure and photodetectors (PDs) performance are investigated. The CsPbBr3 PD prepared at ~190 ℃ possess an excellent response in the UV-Vis region and exhibits a fast response time of 0.7 ms/1.0 ms. Under 405 nm laser irradiation, the PD has a high responsivity, detectivity, external quantum efficiency, and switch ratio of 3.49 A/W, 1.50×1013 Jones, 1075.4%, and 3.29×105, respectively. More importantly, the PD maintains 93% of original photocurrent when exposed to air for 28 days, which demonstrates excellent stability. At the same time, the CsPbBr3 films prepared via CVD are not dependent on the substrate, and the PDs exhibit similar performance on glass, SiO2/Si and polyimide (PI) substrates. The photocurrent of the flexible PD is maintained at 86% of the initial device performance parameters after 1000 bending cycles. These results indicate that the CsPbBr3 perovskite films prepared via CVD have great potential for application in high-performance, stable and flexible PDs.
关键词： photodetector,chemical vapor deposition,stability,CsPbBr3,flexible
更新于2025-09-23 15:21:01
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All organics thin film flexible photodetector based on C<sub>60</sub> modified PEDOT:PSS
摘要： In organic electronics, the use of self-assembled monolayer dielectric functional groups is considered an effective surface modification strategy that can significantly improve device performance. A flexible polymer (PEDOT:PSS) photodetector on the substrate polyimide (PI) with broadband response (450 nm~980 nm) and high response (0.56 A/W) is reported, which is superimposed on the surface by small molecule (C60) thermal evaporation. In addition, the planeness of organic semiconductor and the overall performance of organic thin film photodetector can be improved significantly by using small molecule modified polymer thin film, the response of small molecule modified organic device is improved by an order of magnitude, which provides a guarantee for better application of organic thin films in circuits. Moreover, the device has strong flexibility stability performance, which can meet the requirements of flexible stability of future photoelectric devices.
关键词： organic thin film,high responsivity,broadband response,Photodetector,flexibility
更新于2025-09-23 15:21:01
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Ultrasensitive Ambient-Stable SnSe<sub>2</sub>-based Broadband Photodetectors for Room-Temperature IR/THz Energy conversion and Imaging
摘要： The advent of tin diselenide (SnSe2) enables novel pathways for optoelectronics, due to its reduced cost, ultralow thermal conductivity and high potential for thermoelectricity. To date, SnSe2-based optoelectronic devices have been focused on the visible and infrared range of the electromagnetic spectrum, with efficiency sharply decreasing at longer wavelength. Here, we present SnSe2 photodetectors with exfoliated SnSe2 nanosheets extended in the range of THz frequency, exhibiting high responsivity (170 V W-1), fast speed(2.2 μs), as well as room-temperature operation, based on efficient production of hot electrons under deep-subwavelength electromagnetic focus, which outperform thermal-based photodetectors. The outstanding ambient stability of our broadband photodetectors in a timescale of months is due to the chemical inertness of stoichiometric SnSe2 crystals, validated by surface-science experiments. Our results demonstrate the suitability of SnSe2for multispectral sensing and real-time imaging. Our SnSe2-based detectors show high-contrast imaging from terahertz (THz) up to visible.
关键词： Photothermoelectric,Terahertz,Tin diselenide,Broadband photodetector
更新于2025-09-23 15:21:01