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Detailed investigation of photoluminescence, structural, and elemental properties of ZnO thin films under various annealing ambient
摘要： Zinc oxide (ZnO) has extensively exploited the material in the field of optoelectronics due to its inherent wide bandgap and high electron mobility. Properties of ZnO is very sensitive to its deposition methods and conditions. We report the effect of annealing ambient (i.e. argon, nitrogen, oxygen, or vacuum) on the optical, structural and elemental properties of the RF-sputtered ZnO thin films. In this work, we have performed compressive study on the effects of annealing ambient on a donor-bound exciton peak, exciton-exciton and electron-exciton scattering using low temperature (18 K) photoluminescence measurement which is not yet well understood. We have reported dominant on the donor-bound exciton peak with the lowest full width half maximum value (~4.48 nm) for annealing in an oxygen ambient. The annealing ambient strongly influenced the elemental properties of the film and we have reported the reduction in oxygen vacancy with annealing in an oxygen ambient. This work showed that the influence of ex-situ annealing ambient on exciton emission of ZnO thin films and thus providing a tool for enhancing the optical and elemental properties of the film.
关键词： ZnO thin films,Radio-frequency sputtering,X-ray photoelectron spectroscopy,Rapid thermal processing,Photoluminescence
更新于2025-09-23 15:19:57
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Pure CuBi <sub/>2</sub> O <sub/>4</sub> Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi <sub/>2</sub> O <sub/>3</sub> /CuO Grown by Pulsed Laser Deposition
摘要： A new method for enhancing the charge separation and photo-electrochemical stability of CuBi2O4 photoelectrodes by sequentially depositing Bi2O3 and CuO layers on fluorine-doped tin oxide substrates with pulsed laser deposition (PLD), followed by rapid thermal processing (RTP), resulting in phase-pure, highly crystalline films after 10 min at 650 °C, is reported. Conventional furnace annealing of similar films for 72 h at 500 °C do not result in phase-pure CuBi2O4. The combined PLD and RTP approach allow excellent control of the Bi:Cu stoichiometry and results in photoelectrodes with superior electronic properties compared to photoelectrodes fabricated through spray pyrolysis. The low photocurrents of the CuBi2O4 photocathodes fabricated through PLD/RTP in this study are primarily attributed to their low specific surface area, lack of CuO impurities, and limited, slow charge transport in the undoped films. Bare (without protection layers) CuBi2O4 photoelectrodes made with PLD/RTP shows a photocurrent decrease of only 26% after 5 h, which represents the highest stability reported to date for this material. The PLD/RTP fabrication approach offers new possibilities of fabricating complex metal oxides photoelectrodes with a high degree of crystallinity and good electronic properties at higher temperatures than the thermal stability of glass-based transparent conductive substrates would allow.
关键词： CuBi2O4,solar water splitting,rapid thermal processing,ternary oxides,pulsed laser deposition
更新于2025-09-23 15:19:57
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Microstructural investigation of inkjet printed Cu(In,Ga)Se2 thin film solar cell with improved efficiency
摘要： Inkjet printed copper indium gallium diselenide (CIGS) thin film solar cell has attracted tremendous attention because of its various technological benefits as a non-vacuum process. Focused efforts in selenization of inkjet printed films to make the process feasible, are desired. In this work, microstructural investigation of inkjet printed precursor film selenized by rapid thermal processing (RTP) is presented. The optimization of selenization time for transforming metal nitrates precursor ink to CIGS thin film is investigated. Based on the results, the growth mechanism to form CIGS from inkjet printed CIG precursor films is proposed. Systematic study on the molybdenum diselenide (MoSe2) phase evolution during the two-step atmospheric pressure selenization process at the CIGS-Mo interface and its effect on device performance are carried out. Non-uniform inter-diffusion of indium (In) and gallium (Ga) during selenization, resulting in double-layered CIGS, one of the major reason limiting the performance of the devices is investigated through XRD, Raman, FESEM, EDS and Mott-Schottky analysis. The significant improvement in device efficiency from 0.4% to 4.2% is achieved due to microstructural improvement in CIGS films. Investigation on the mechanism of microstructural growth with selenization time affecting final device performance is presenting in this work.
关键词： CIGS,Rapid thermal processing,Microstructural growth,Inkjet printing,Atmospheric pressure selenization
更新于2025-09-23 15:19:57
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A Distributed-Parameter Approach for the Surface Temperature Estimation of an LED Heated Silicon Wafer
摘要： A variety of processes in the semiconductor industry require heating of the silicon wafer to the desired temperature. This process is widely referred to as rapid thermal processing. However, the contactless measurement of the surface temperature of the wafer is still a major challenge, especially in the case of rotating wafers. Measurements using infrared cameras are not suitable due to the fact that silicon is transparent in this wavelength range. Special sensors based on the principle of pyrometry are available, but such sensors can only measure the surface temperature at one single point. This paper presents an observer approach that estimates the wafer’s surface temperature by using the temperature measurement of only one pyrometer. The approach is based on a mathematical model capturing the dynamical behavior of the wafer’s temperature. It relies mainly on the quasi-linear heat equation. Real world experiments demonstrate the achieved accuracy of the proposed approach.
关键词： Rapid thermal processing,semiconductor device manufacture,distributed parameter systems,process control
更新于2025-09-11 14:15:04
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Low-Temperature Process for Direct Formation of MoS2 Thin Films on Soda-Lime Glass Substrates
摘要： To obtain molybdenum disulfide (MoS2) patterns without any mechanical problems caused by the transfer process, direct current (DC) sputtering and rapid thermal processing (RTP) were used to form MoS2 instead of the conventional chemical vapor deposition (CVD) process. To form MoS2 on a soda-lime glass substrate at temperatures below 600 °C, MoS2 films were deposited at various DC sputtering powers and annealed at various temperatures from 400 °C to 550 °C. From the scanning electron microscope (SEM) and atomic force microscope (AFM) results, the surface morphologies of the MoS2 films can be observed, depending on the sputtering power and the film thickness. The Raman spectrum results showed that the E1 2g and A1 g mode peaks appeared at approximately 372 cm?1 and 400 cm?1, respectively, and the MoS2 surface was crystallized in the in-plane direction. The X-ray photoelectron spectroscopy (XPS) results showed noticeable S 2p (2p 1/2, 2p 3/2) peaks and Mo 3d (3d 3/2, 3d 5/2) peaks at stable binding energies after RTP at temperatures below 600 °C. The high mobilities and carrier densities of all the MoS2 films can be investigated from the Hall measurements.
关键词： DC Sputtering,Low Temperature,Molybdenum Disulfide (MoS2),Rapid Thermal Processing (RTP),Soda-Lime Glass
更新于2025-09-04 15:30:14