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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Angular Dependence of Textured Bifacial Silicon Heterojunction Solar Cells for High Latitudes
摘要： Bifacial photovoltaics at high latitudes can achieve up to 25-45% bifacial gain due to high-albedo snow cover and high proportion of diffuse light. We studied the angular performance of bifacial silicon heterojunction solar cells with various textures to understand high-latitude effects on optical losses. For cone and pyramid-patterned designs, efficiency decreases at high angles, primarily due to increased reflectivity, although longer path length through front-surface films also increases UV losses for all surface types. At 80° incidence and 25°C, a <7% reduction in short-circuit current due to change in external quantum efficiency is observed for random pyramid textured surfaces. Simulation is compared to measured external quantum efficiency for a silicon heterojunction cell, and similar trends are observed with increasing angle of incidence. A relative reduction of <1% in short-circuit current is also observed when moving from an air mass of 1.5 to 5 at high angles of incidence. These results will inform future solar heterojunction designs for this application and be applied to refine annual energy yield calculations.
关键词： photovoltaic cells,bifacial photovoltaics,indium-tin-oxide,amorphous silicon,ray tracing,silicon solar cell,texture,angle of incidence,heterojunction cell,air mass
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Impact of Deposition of ITO on Tunnel Oxide Passivating Poly-Si Contact
摘要： In this study, we investigate the impact of the deposition of indium tin oxide (ITO) via DC magnetron sputtering on tunnel oxide passivating poly-Si contacts. Before ITO deposition to the tunnel SiOx passivating n+ poly-Si rear-contact on the cell structure with an SiNx/Al2O3 passivating boron emitter, the implied open-circuit voltage (iVoc) and implied fill factor (iFF) were measured to be 694±10 mV and 83±0.6%, respectively. After ITO sputtering and curing annealing, the iVoc and iFF were almost fully recovered, resulting in the iVoc of 685±11 mV and iFF of 81.9±0.8%. The characteristic of fully recovered effective lifetime is attributed to unique sputtering conditions employing a very low power density at room temperature and curing.
关键词： silicon solar cell,indium tin oxide,transparent conducting oxide,DC magnetron sputtering,tunnel oxide,perovskite,tandem solar cell
更新于2025-09-23 15:19:57
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Analysing consequence of solar irradiance on amorphous silicon solar cell in variable underwater environments
摘要： Harvesting underwater Solar energy using photovoltaic (PV) technology leads to an innovative approach to utilize it in monitoring various underwater sensors, devices, or other autonomous systems using modern-day power electronics. Another huge advantage of placing PV cells underwater comes from the fact that the water itself can provide cooling and cleaning for the cells. Such advantages come with many challenges and constraints due to the underwater spectral change and decrease in Solar radiation with an increase in water depth. In this work, an experimental set-up has been realized to create an underwater environment and further characterized in the indoor environment using the Solar simulator. Moreover, the transfer of Solar radiation through water and the performance of amorphous silicon Solar cell underwater up to 0.2 m has been analysed in changing underwater environments. This investigation shows a better understanding of solar radiation underwater and the amorphous silicon solar cell underwater at shallow depths with considering the water depth up to 0.2 m, salinity 3.5%, total dissolved salts, and other impurities affecting the solar radiation and the performance of amorphous silicon Solar cell in underwater conditions. In addition to that, the maximum power output Pmax of amorphous silicon Solar cell is 0.0367 W at 0.2 m in the case of DI water. In contrast, in real seawater and artificial seawater with 3.5% salinity, it shows 0.0337 W and 0.0327 W, respectively.
关键词： water salinity,amorphous silicon Solar cell,photovoltaic (PV) technology,underwater Solar energy,Solar radiation,PDMS (polydimethylsiloxane)
更新于2025-09-23 15:19:57
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An analytical approach for modeling of high-efficiency crystalline silicon solar cells with homoa??hetero junctions
摘要： An analytical model based on charge neutrality principle and energy band diagram analysis is investigated to model a new structure of silicon heterojunction solar cell, which encompasses both homo and heterojunctions. In the analysed structure, a thin (pt)c-Si and a thin (nt)c-Si layers are used at front and back surfaces of (n)c-Si substrate respectively. The purpose of incorporating these layers is to reduce the solar cell output parameters sensitivity to a-Si:H/c-Si interface defect densities, increase the open circuit voltage eVocT and increase the fill factor (FFT. Since (n)c-Si silicon bulk becomes quasi neutral in the mentioned structure, charge neutrality equation can be separated as two independent equations for front and back surfaces. Solving charge neutrality equations, result in a-Si:H/c-Si interface potential, and subsequently charge concentration, electric field, surface recombination velocity, and open circuit voltage (Voc) calculation. Then, by adjusting doping concentration of the two additional layers, their effect on surface potential and energy band bending is studied. It is observed that (cid:0) 3, the Voc drops by when doping concentration of (pt)c-Si layer is increased from 1 ? 1018cm 15mV, and FF increases by 2:5%, while Voc and FF sensitivity to interface defects density is improved considerably. On the other hand, by (nt)c-Si layer insertion at back surface, in addition to decreasing sensitivity to interface defect densities in comparison to conventional SHJ silicon solar cell, Voc and FF are increased due to combination of high conductivity and enhancement of field effect passivation at back surface of solar cell. (cid:0) 3 Voc and FF Moreover, when doping concentration of (nt)c-Si layer increases from 1 ? 1018cm increases from 680 mV and 71% to 740 mV and 82% respectively.
关键词： HHJ silicon solar cell,(nt)c-Si layer,(pt)c-Si layer,Energy band diagram analysis,Charge neutrality principle
更新于2025-09-23 15:19:57
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Unassisted Water Splitting Using Standard Silicon Solar Cells Stabilized with Copper and Bi-functional NiFe Electrocatalysts
摘要： Silicon photovoltaic cells functionalized with water splitting electro-catalysts are promising candidates for unassisted water splitting. In these devices, the total surface of silicon solar cell is covered with electrocatalyst causing issues with i) stabilizing silicon solar cell in water and ii) device efficiency due to parasitic optical absorption in electrocatalyst. We describe and validate a water splitting device concept using a crystalline silicon solar cell where the front-side is covered with insulating Si3N5 antireflection coating. The Ag contacts, fired through the antireflection coating, are removed and subsequently substituted with NiFe layered double hydroxide (LDH) or Cu/NiFe-LDH electrocatlysts. In this device only the site of Ag contacts, nearly 2% of total device area is covered by the electrocatalyst. We found this small area of catalyst does not limit device performance and addition of a Cu interlayer between Si and NiFe-LDH improves device performance and stability. The unassisted water splitting efficiency of 11.31%, measured without separating the evolved gases, is achieved using a device composed of three series-connected silicon solar cells and a NiFe-LDH/Cu/Ni-foam counter electrode in a highly alkaline electrolyte.
关键词： NiFe layered double hydroxides,Photoelectrochemical Cells,Unassisted Water Splitting,Crystalline Silicon Solar Cell,Si Photocathodes
更新于2025-09-23 15:19:57
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Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD
摘要： Plasma-assisted atomic layer deposition (PA-ALD) is more suitable than thermal atomic layer deposition (ALD) for mass production because of its faster growth rate. However, controlling surface damage caused by plasma during the PA-ALD process is a key issue. In this study, the passivation characteristics of Al2O3 layers deposited by PA-ALD were investigated with various O2 plasma exposure times. The growth per cycle (GPC) during Al2O3 deposition was saturated at approximately 1.4 ?/cycle after an O2 plasma exposure time of 1.5 s, and a refractive index of Al2O3 in the range of 1.65–1.67 was obtained. As the O2 plasma exposure time increased in the Al2O3 deposition process, the passivation properties tended to deteriorate, and as the radio frequency (RF) power increased, the passivation uniformity and the thermal stability of the Al2O3 layer deteriorated. To study the Al2O3/Si interface characteristics, the capacitance-voltage (C-V) and the conductance-voltage (G-V) were measured using a mercury probe, and the ?xed charge density (Qf) and the interface trap density (Dit) were then extracted. The Qf of the Al2O3 layer deposited on a Si wafer by PA-ALD was almost una?ected, but the Dit increased with O2 plasma exposure time. In conclusion, as the O2 plasma exposure time increased during Al2O3 layer deposition by PA-ALD, the Al2O3/Si interface characteristics deteriorated because of plasma surface damage.
关键词： Plasma-assisted atomic layer deposition,Plasma damage,Silicon solar cell,Passivation,Al2O3
更新于2025-09-23 15:19:57
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Highly transparent and conductive oxide-metal-oxide electrodes optimized at the percolation thickness of AgOx for transparent silicon thin-film solar cells
摘要： Highly transparent and conductive oxide-metal-oxide (OMO) electrodes comprising aluminum-doped zinc-oxide (AZO) and ultrathin Ag or oxygen (O2)-doped Ag (AgOx) metal layers were fabricated for use in thin-film silicon solar cells. The surface morphologies of the metal layers and the transparencies and conductivities of OMO electrodes were investigated near the percolation thickness values of the metal layers. The percolation metal thickness, which means the metal layer is morphologically continuous, could be used to optimize the transparent OMO electrode. Additionally, thin Ag-based OMO (AgOx OMO) with superior performance could be fabricated by adding O2. The optimized AgOx OMO electrodes yielded the highest average transmittance (Tavg) of 93.5% and the lowest average optical loss (OLavg) of 1.01% within 500–800 nm at the percolation thickness of ~6 nm, thus, maintaining low conductivity. These outcomes were superior to the responses of the percolated Ag OMO (Tavg = 87.2%; OLavg = 1.01%). Using the OMO structure at the rear electrode, transparent hydrogenated amorphous silicon thin-film solar was fabricated for building integrated photovoltaic windows. The best figure-of-merit (FOM; equal to the product of Tavg and efficiency η) values of the OMO-based transparent solar cells could be obtained for percolated OMO structures. The cells using AgOx OMO (AgOx cells) performed better than the Ag cells; the best FOMs of AgOx and Ag cells were 140.8 (Tavg = 27.8%; η = 5.51%) and 104.6% (Tavg = 18.9%; η = 5.54%), respectively. These results could contribute to the development of high-performance transparent solar cells or optoelectronic devices.
关键词： Oxygen-doped silver,Oxide/metal/oxide,Transparent conductive electrode,Transparent solar cell,Thin-film silicon solar cell
更新于2025-09-19 17:13:59
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The Effect of Crystallographic Orientation and Nanoscale Surface Morphology on <i>Poly</i> -Si/SiO <i> <sub/>x</sub></i> Contacts for Silicon Solar Cells
摘要： High-efficiency crystalline silicon (Si) solar cells require textured surfaces for efficient light trapping. However, passivation of a textured surface to reduce carrier recombination is difficult. Here, we relate the electrical properties of cells fabricated on a KOH-etched, random pyramidal textured Si surface to the nanostructure of the passivated contact and the textured surface morphology. The effects of both microscopic pyramidal morphology and nanoscale surface roughness on passivated contacts consisting of a polycrystalline Si (poly-Si) deposited on top of an ultrathin, 1.5–2.2 nm, SiOx layer is investigated. Using atomic force microscopy we show a pyramid face, which is predominantly a Si(111) plane to be significantly rougher than a polished Si(111) surface. This roughness results in a nonuniform SiOx layer as determined by transmission electron microscopy (TEM) of a poly-Si/SiOx contact. Our device measurements also show an overall more resistive, and hence thicker SiOx layer over the pyramidal surface as compared to a polished Si(111) surface, which we relate to increased roughness. Using electron-beam-induced current measurements of poly-Si/SiOx contacts we further show that the SiOx layer near the pyramid valleys is preferentially more conducting, and hence likely thinner than over pyramid tips, edges and faces. Hence, both the microscopic pyramidal morphology and nanoscale roughness lead to nonuniform SiOx layer, thus leading to poor poly-Si/SiOx contact passivation. Finally, we report >21% efficient and ≥80% fill-factor front/back poly-Si/SiOx solar cells on both single-side and double-side textured wafers without the use of transparent conductive oxide layers and show that the poorer contact passivation on a textured surface is limited to boron-doped poly-Si/SiOx contacts.
关键词： passivated contact,tunneling,silicon oxide,electron beam induced current,silicon solar cell,surface orientation,atomic force microscopy
更新于2025-09-19 17:13:59
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Reflectance and crystallinity of silicon solar cells with LIPSS produced by XeCl excimer laser pulses
摘要： Laser-induced periodic surface structures (LIPSS) were formed on silicon solar cell surfaces by using a XeCl excimer laser to irradiate them with nanosecond UV laser pulses in the fluence range 0.2–0.6 J/cm2 near the melting threshold fluence (Fth = 0.5 J/cm2) in air. We measured the reflectance of the silicon solar cells after laser irradiation and evaluated their crystallinity by Raman spectroscopy. We found that reflectance and crystallinity depended on laser fluence and number of pulses. For fluence of 0.5 J/cm2, the produced LIPSS contributed to a reduction of ΔR = 3.3% in reflectance at a wavelength of 500 nm. The crystallinity of the fine structures with reduced reflectance was maintained at laser fluences near the melting threshold.
关键词： Crystallinity,Nanosecond UV laser,Reflectance,LIPSS,Nanostructured silicon solar cell
更新于2025-09-19 17:13:59
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Spatially Resolved Electrical Parameters of Si Solar Cells Using Quantitative Lock-In Carrierography
摘要： Electrical parameters (saturation current density and local series resistance) are critical to solar cells. In this work, 2-dimensional finite-element simulations were carried out to study the influence of local distributions of electrical parameters and broken fingers on luminescence images at various working conditions. The relationship between luminescence intensity and local diode implied voltage was identified by simulation results and also by lock-in carrierography/photoluminescence measurements on a silicon solar cell. Spatially resolved saturation current density (J0) and local series resistance (Rs) of the Si solar cell were realized by LIC. Influences of broken fingers on J0 and Rs were discussed. The LIC measurements were in accordance with 2D simulation results. The experiment results show that LIC, as a quantitative luminescence-based methodology, can be able to spatially resolve electrical parameters of silicon solar cells and PV modules.
关键词： Electrical parameters,Lock-in carrierography,Silicon solar cell,2D simulation
更新于2025-09-19 17:13:59