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Controlled Sputtering Pressure on High-Quality Sb2Se3 Thin Film for Substrate Configurated Solar Cells
摘要： Magnetron sputtering has become an effective method in Sb2Se3 thin film photovoltaic. Research found that post-selenization treatments are essential to produce stoichiometric thin films with desired crystallinity and orientation for the sputtered Sb2Se3. However, the influence of the sputtering process on Sb2Se3 device performance has rarely been explored. In this work, the working pressure effect was thoroughly studied for the sputtered Sb2Se3 thin film solar cells. High-quality Sb2Se3 thin film was obtained when a bilayer structure was applied by sputtering the film at a high (1.5 Pa) and a low working pressure (1.0 Pa) subsequently. Such bilayer structure was found to be beneficial for both crystallization and preferred orientation of the Sb2Se3 thin film. Lastly, an interesting power conversion efficiency (PCE) of 5.5% was obtained for the champion device.
关键词： Sb2Se3,magnetron sputtering,substrate configuration,post-selenization,working pressure,thin film solar cell
更新于2025-09-23 15:19:57
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Flexible high-efficiency CZTSSe solar cells on diverse flexible substrates via an adhesive-bonding transfer method
摘要： Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells are showing great promise due to using earth-abundant and non-toxic materials and tuning the bandgap through the amount of S and Se. Flexible high-efficiency CZTSSe solar cells are one of the outstanding research challenges because they currently require the use of thick glass substrates due to the high-temperature heat treatment process, and for this reason, few flexible CZTSSe solar cells have been reported. Furthermore, most researchers have used thin glass and metal substrates with little flexibility; the power conversion efficiency (PCE or ?) values of the solar cells made with them have been somewhat lower. To overcome these hurdles, we transferred high-efficiency CZTSSe solar cells formed on a soda-lime glass substrate to flexible substrates via an adhesive-bonding transfer method. Via this method, we were able to achieve the PCE of 5.8 to 7.1% on completely flexible substrates such as cloth, paper, and polyethylene terephthalate (PET). In particular, we were able to produce a CZTSSe solar cell on a PET substrate with a PCE of 7.1%, which is the highest among fully-flexible CZTSSe solar cells currently known to us. In addition, we deeply analyzed the PCE degradation of the flexible CZTSSe solar cell fabricated by the transfer method through a panoramic focused ion-beam image and nanoindentation. From the results of our work, we provide an insight into the possibility of making flexible high-efficiency CZTSSe solar cells using our transfer method.
关键词： thin-film solar cell,transfer method,polyethylene terephthalate (PET),Cu2ZnSn(S,Se)4 (CZTSSe),diverse flexible substrates
更新于2025-09-19 17:13:59
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Theoretical investigation of broadband absorption enhancement in a-Si thin-film solar cell with nanoparticles
摘要： Thin-film solar cells have attracted increasing attention due to its low material cost and large flexibility, but they also face the challenge of low solar absorption due to reduced active layer thickness. Through exciting surface plasmon resonance, plasmonic metal nanoparticles are usually placed on the cell front surface to enhance solar absorption. However, if eliminating the unuseful intrinsic absorption in nanoparticles, we find that dielectric ones are better choices to enhance a-Si thin-film solar cell absorption efficiency. Moreover, a composite light trapping structure with dielectric nanoparticles on the front surface and metal hemispheres on the rear surface is proposed to achieve broadband absorption enhancement in both short and long wavelengths, with the aim to get a higher conversion efficiency. The finite-difference-time-domain simulation results show that, compared with bare 100-nm-thick amorphous silicon solar cell, the short-circuit current density and photoelectric conversion efficiency could be respectively improved by 21% and 18% with addition of optimized composite light trapping structure. The general method proposed in this study could provide valuable guidance to light trapping structure design for various kinds of thin-film solar cells.
关键词： Broadband absorption enhancement,Thin-film solar cell,Light trapping,Conversion efficiency,Amorphous silicon,Nanoparticle
更新于2025-09-19 17:13:59
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Bournonite CuPbSbS3: an electronically-3D, defect-tolerant, and solution-processable semiconductor for efficient solar cells
摘要： The absorber layer is a key component of thin-film solar cells. Based-on the recently-proposed electronic dimensionality concept, a promising solar cell absorber material should be electronically high-dimensional, as is the case for all the mainstream absorbers, such as Si, GaAs, CIGS, CdTe, and CH3NH3PbI3. In this work, we propose an electronically three-dimensional semiconductor, bournonite CuPbSbS3, as a prospective efficient solar cell absorber material. Our density functional theory calculations indicate that CuPbSbS3 exhibits desired optoelectronic properties, such as a nearly direct bandgap, high optical absorption coefficients, appropriate p-type doping, and defect tolerance. Experimentally, we developed a butyldithiocarbamate acid (BDCA) solution process for depositing high-quality CuPbSbS3 thin films and built the first CuPbSbS3 solar cells. Our CuPbSbS3-based thin film solar cells achieved a preliminary power conversion efficiency of 2.23% (open circuit voltage of 699 mV), highlighting the potential of this semiconductor for thin film photovoltaics.
关键词： defect tolerance,thin film solar cell,BDCA solution,Bournonite,electronic dimensionality
更新于2025-09-19 17:13:59
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Cu(In,Al)Se <sub/>2</sub> Photovoltaic Thin Film Solar Cell from Electrodeposited Stacked Metallic Layers
摘要： An improved technique for synthesis of Cu(In,Al)Se2 is demonstrated, associated with sequential electrodeposition of a stacked layer in the order of Cu/Al/In followed by annealing in selenium vapor. Many advantages such as adjustable constitutes composition, good polycrystalline structure, pure chalcopyrite phase, uniform and compact surface morphology are obtained compared to the film fabricated by conventional electrodeposition process. The film thickness and the concentration of each metal deposited were controlled by the flexibility parameters of deposition time. The influence of Al content on the crystal structure, surface morphology, photoelectrochemical performance, optical and electronic properties of the films were investigated. The crystal size decrease and the energy bandgap of Cu(In,Al)Se2 thin film increase gradually with the increasing Al were revealed. Impedance potential test reveals the manufactured Cu(In,Al)Se2 thin films are all p-type semiconductor and the carrier concentration increases with the Cu/(Al + In) and Al/(In + Al) ratio. Photoelectrochemical investigation of Cu(In,Al)Se2 films verified that a higher photocurrent was obtained with a relative lower Al content due to a narrower bandgap leading to lower-energy photon absorption and a lower carrier density and a larger grain size both benefiting the transfer of photogenerated carriers and decrease the recombination of charge carriers. The obtained optimum Cu(In,Al)Se2 thin film based solar cell has been theoretical modeling and simulated. A high PCE of 17.08% was gained implying its potential application in photovoltaic devices.
关键词： electrodeposition,photovoltaic,Cu(In,Al)Se2,chalcopyrite,thin film solar cell
更新于2025-09-19 17:13:59
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Lithium-assisted synergistic engineering of charge transport both in GBs and GI for Ag-substituted Cu2ZnSn(S,Se)4 solar cells
摘要： Although silver (Ag) substitution offers several benefits in eliminating bulk defects and facilitating interface type inversion for Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic (PV) technology, its further development is still hindered by the fairly low electrical conductivity due to the significant decrease of acceptors amount. In this work, a versatile Li-Ag co-doping strategy is demonstrated to mitigate the poor electrical conductivity arising from Ag through direct incorporating Li via postdeposition treatment (PDT) on top of the Ag-substituted CZTSSe absorber. Depth characterizations demonstrate that Li incorporation increases p-type carrier concentration, improves the carrier collection within the bulk, reduces the defects energy level as well as inverts the electric field polarity at grain boundaries (GBs) for Ag-substituted CZTSSe system. Benefiting from this lithium-assisted complex engineering of electrical performance both in grain interior (GI) and GBs, the power conversion efficiency (PCE) is finally increased from 9.21% to 10.29%. This systematic study represents an effective way to overcome the challenges encountered in Ag substitution, and these findings support a new aspect that the synergistic effects of double cation dopant will further pave the way for the development of high efficiency kesterite PV technology.
关键词： Ag substitution,Alkali doping,Cu2ZnSn(S,Se)4,Thin film solar cell,Post-treatment
更新于2025-09-19 17:13:59
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Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer
摘要： A coupled optoelectronic model was implemented along with the differential evolution algorithm to assess the efficacy of grading the bandgap of the Cu2ZnSn(SξSe1?ξ)4 (CZTSSe) layer for enhancing the power conversion efficiency of thin-film CZTSSe solar cells. Both linearly and sinusoidally graded bandgaps were examined, with the molybdenum backreflector in the solar cell being either planar or periodically corrugated. Whereas an optimally graded bandgap can dramatically enhance the efficiency, the effect of periodically corrugating the backreflector is modest at best. An efficiency of 21.74% is predicted with sinusoidal grading of a 870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achieved experimentally with a 2200-nm-thick homogeneous CZTSSe layer. High electron-hole-pair generation rates in the narrow-bandgap regions and a high open-circuit voltage due to a wider bandgap close to the front and rear faces of the CZTSSe layer are responsible for the high enhancement of efficiency.
关键词： optoelectronic optimization,Bandgap grading,thin-film solar cell,earth-abundant materials,CZTSSe solar cell
更新于2025-09-16 10:30:52
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[IEEE 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT) - Dhaka, Bangladesh (2019.5.3-2019.5.5)] 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT) - An Efficient CZTS Solar Cell from Numerical Analysis
摘要： The Copper Zinc Tin Sulfide (CZTS) is considered as one of the promising semiconductor materials in Kesterite family for potential solar cells absorber material. This work focuses on the numerical model and simulation of efficient CZTS based thin-film solar cell. Popular thin-film solar cell simulator wxAMPS was used for simulation of (Al:ZnO/i-ZnO/CdS/CZTS/Mo)structured solar cell and the effects of different layer properties on cell performance parameters were analyzed. An optimized cell with 15.84% (%FF=72.86, Voc=0.78Volt and Jsc=27.98 mA/cm2) energy conversion efficiency has proposed. The temperature coefficient (TC) of 0.02%/○C had shown the higher stability of the proposed cell. All of the simulated results had encouraged towards fabrication of high performance thin-film CZTS solar cells.
关键词： wxAMPS,Conversion efficiency,Numerical Simulation,CZTS,Thin-film solar cell
更新于2025-09-16 10:30:52
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Simulation analysis of functional MoSe <sub/>2</sub> layer for ultra-thin Cu(In,Ga)Se <sub/>2</sub> solar cells architecture
摘要： The influence of Molybdenum diselenide transition metal dichalcogenide material (p-type MoSe2 TMDC) as an interfacial layer between the ultra-thin Cu(In,Ga)Se2 (CIGS) absorber layer, with thickness less than 500 nm, and molybdenum back contact was studied using SCAPS-1D simulation package. The possible effects of the p-MoSe2 layer on the electrical properties and the photovoltaic parameters of the CIGS thin-film solar cells have been investigated. Band gap energy, carrier concentration, and the layer thickness of the p-MoSe2 were varied in this study. The optimum band gap is found to be of 1.3 eV. Interfacial layers of thicknesses less than 200 nm have been found to cause deterioration for the overall cell performance. This might be attributed to the increase in the back-contact recombination current and the reduction of the built-in potential at p-MoSe2/CIGS junction. Furthermore, the MoSe2 layer would form the so-called back surface field (BSF), due to the associated wider band gap with respect to that of CIGS absorber layer. Additionally, the simulation of the I–V characteristic showed a higher slope which implies that MoSe2 layer at the CIGS/Mo interface acts in a beneficial way on the CIGS/Mo hetero-contact adapting it from Schottky type contact to quasi-ohmic contact. The conversion efficiency has increased significantly from 14.61% to 22.08%, without and with the MoSe2 layer, respectively. These findings are very promising for future high performance and cost-effective solar cell devices.
关键词： SCAPS,thin film solar cell,CIGS,TMDC
更新于2025-09-16 10:30:52
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[IEEE 2019 International Conference on Electrical, Communication, and Computer Engineering (ICECCE) - Swat, Pakistan (2019.7.24-2019.7.25)] 2019 International Conference on Electrical, Communication, and Computer Engineering (ICECCE) - Modelling of Highly Efficient Copper Zinc Tin Sulphide (CZTS) Solar Cell for Performance Improvement
摘要： Low stability, less efficiency and high cost material of the solar cell make its commercialization and manufacturing less point of attention for many researcher and industrial investor. However, the main focus of this work is to compare the investigated material i.e., CZTS with existing materials i.e., amorphous, CIGS and perovskite solar cells with respect to efficiency, cost and stability as it is one of the keen interests in photovoltaic (PV) research field. In this paper, we have presented a highly efficient, highly stable and less costly thin film solar cell with novel material i.e., Copper Zinc Tin Sulphide (CZTS) that holds a conversion efficiency, η of 18.68% with supporting short current density, Jsc= 25.258mA/cm2, open circuit voltage, Voc=0.8787 V and fill factor, FF=84.17%. Different window layer materials along with various buffer layer materials is tested and founded that fluorine tin oxide (FTO) and Indium sulphide (In2S3) are best performing candidates among all other materials. Moreover, effect of high temperature on CZTS electrical parameter is analyzed and drop in the η is observed when the temperature of the device is increased.
关键词： CZTS,Thin film solar cell,Temperature,Electrical parameter
更新于2025-09-16 10:30:52