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- 2018
- thin-film transistors
- N2O plasma treatment.
- amorphous InGaZnO
- gate-bias stress
- stability
- Electronic Science and Technology
- Peking University
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Investigation of the microstructural, surface and optical properties of nano-layer MoxSy thin film deposited by thermionic vacuum arc
摘要： Molybdenum disulfide (MoxSy) thin film was deposited onto the glass substrate using Thermionic Vacuum Arc (TVA) technique. MoS2 as know as low-friction coefficient and solid lubricant material and it is a 2-dimension material. In this study, properties of the 2D (MoxSy) were determined. In 2D coating, mixed phase of MoS2, Mo2S3, Mo3S4 and Mo15S19 crystal reflection planes were detected in XRD pattern. The thickness of the film was measured as to be 30 nm. The crystallite sizes were calculated in the range of 6-20 nm. deposited 2D layer is nearly equal to about 1.98 eV. The dielectric constant for the deposited layer is very close to 4.3. To determine the optical impurity and defects, photoluminescence and Raman analyses were done. Also, friction coefficient of the 2D nano layer was measured by ball on disk technique.
关键词： optical properties,microstructural properties,MoS2 thin film,TVA
更新于2025-09-09 09:28:46
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Improved Negative Bias Stress Stability of Sol-Gel-Processed Mg-Doped In <sub/>2</sub> O <sub/>3</sub> Thin Film Transistors
摘要： We demonstrate sol–gel-processed Mg-doped In2O3 thin film transistors (TFTs) with high performance and improved stability. To improve the performance of indium oxide, which is unstable at a high negative threshold voltage, magnesium is used to suppress oxygen vacancy formation. As the Mg doping concentration increases, the oxygen deficiencies and OH impurities decrease, resulting in a positive shift in the threshold voltage and improved stability in negative bias stress environments. In this experiment, Mg-doped (0 to 2 wt%) indium oxide TFTs are fabricated. Indium oxide prepared from a synthesized solution of an indium nitrate hydrate precursor and 2-methoxyethanol has a mobility of 17.2 cm2/V s. In2O3 TFTs doped with 1 wt% Mg also show a high mobility of 11.02 cm2/V s and a noticeable ?1.5 V threshold voltage shift under negative bias stress. Our results suggest that the sol–gel-processed Mg-doped In2O3 TFTs are a promising candidate for use in high-stability and high-performance applications in transparent devices.
关键词： thin film transistors,negative bias stress,Mg doping,Sol-gel,In2O3
更新于2025-09-09 09:28:46
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The Effect of the Thickness and Oxygen Ratio Control of Radio-Frequency Magnetron Sputtering on MgZnO Thin-Film Transistors
摘要： In this study, we use silicon dioxide for a magnesium-zinc-oxide thin-film transistor gate dielectric layer, controlling the thickness of the active layer and the Mg content of the film by radio-frequency (RF) sputtering. With an ideal thickness, a magnesium-zinc-oxide thin-film transistor can function normally. As the active layer thickness is controlled at 10 nm and the sputtering oxygen-flow rate is controlled at 14% to properly compensate for the oxygen vacancies, we can obtain the best features. The result of the analysis showed a field-effect mobility of 5.65 cm2/V · s, a threshold voltage of 3.1 V, a subthreshold swing improved to 0.80, and a current-switch ratio of over five orders of magnitude.
关键词： RF Sputtering,Magnesium Zinc Oxide,Thin-Film Transistor
更新于2025-09-09 09:28:46
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Effect of the Active Channel Thickness Variation in Amorphous In–Zn–Sn–O Thin Film Transistor
摘要： Ternary oxide thin films in the In2O3–ZnO–SnO2 system were studied for potential applications in oxide semiconductor thin film transistors (TFTs). An amorphous In–Zn–Sn–O (a-IZTO) active channel layer was deposited by RF magnetron sputtering at room temperature on an n++ Si substrate. Films from a sintered ceramic target with a nominal chemical composition of In:Zn:Sn = 40:50:10 at.% were prepared with thicknesses ranging from 15 nm to 150 nm, which was followed by annealing at 350 °C for 30 minutes in air. Subsequently, a bilayer Cu/Ti metal contact was deposited as the source/drain electrodes on the top surface through a shadow mask using an e-beam evaporator. The thickness of the active channel layer greatly influenced the characteristics of the oxide thin film transistors. The best transistor characteristics were observed from the test device with a channel thickness of 30 nm and a high on/off current ratio of approximately 108, high field effect mobility of 25 cm2/Vs, low threshold voltage of ?0.1 V, and very small subthreshold swing of 0.14 V/dec.
关键词： Thin Film Transistor,In–Zn–Sn–O,Amorphous Oxide,RF Magnetron Sputtering,IZTO,Channel Thickness
更新于2025-09-09 09:28:46
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Development of Thermal Kinetic Inductance Detectors Suitable for X-ray Spectroscopy
摘要： We report on the development of thermal kinetic inductance detectors (TKIDs) suitable to perform X-ray spectroscopy measurements. The aim is to implement MKIDs sensors working in thermal quasi-equilibrium mode to detect X-ray photons as pure calorimeters. The thermal mode is a variation on the MKID classical way of operation that has generated interest in recent years. TKIDs can offer the MKIDs inherent multiplexibility in the frequency domain, a high spatial resolution comparable with CCDs, and an energy resolution theoretically limited only by thermodynamic fluctuations across the thermal weak links. Microresonators are built in Ti/TiN multilayer technology with the inductive part thermally coupled with a metal absorber on a suspended SiN membrane, to avoid escape of phonons from the film to the substrate. The mid-term goal is to optimize the single-pixel design in terms of superconducting critical temperatures, internal quality factors, kinetic inductance and spectral energy resolution. The final goal is to realize a demonstrator array for a next generation thousand pixels X-ray spectrometer. In this contribution, the status of the project after one year of developments is reported, with detailed reference to the microresonators design and simulations and to the fabrication process.
关键词： Thermal mode,Microwave kinetic inductance detectors,TKID,MKIDs,Thin film,X-ray spectroscopy,Superconducting film,Micromachining,Super-conductive microresonators,Thermal kinetic inductance detectors
更新于2025-09-04 15:30:14
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Synthesis and characterization of photo-crosslinkable coumarin-containing polymer dielectric for organic transistors
摘要： Herein, a photo-crosslinkable coumarin-containing polymer, poly(7-(4-vinyl-benzyloxyl)-4-methylcoumarin) or PVBMC, was prepared, and its physicochemical and electrical properties as a gate dielectric in organic electronic devices, such as organic thin-film transistor (OTFT) and inverter, was evaluated. The crosslinking of PVBMC by exposure to UV light (365 nm) over time was characterized using Fourier-transform IR and UV-visible spectroscopy. The measured capacitance of the cross-linked PVBMC thin film in a metal-insulator-metal-type capacitor was as high as 36.4 pF/mm2. Pentacene-based OTFT and load-type inverter with the cross-linked PVBMC gate dielectric were prepared, and their electrical responses were evaluated under ambient conditions. The OTFT showed dominant hole charge carrier transport behavior with a field-effect mobility of 1.52 · 10-1 cm2/Vs and negligible hysteresis. The load-type inverter based on the OTFT exhibited moderate static and dynamic switching responses to the applied electrical pulse. These results suggest the potential application of photo-crosslinked PVBMC as a gate dielectric in the fabrication of high-performance OTFT-based devices.
关键词： Gate dielectric,Polymer film,Organic thin-film transistor,Photo-crosslinking
更新于2025-09-04 15:30:14
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Development of a scanning probe microscopy integrated atomic layer deposition system for <i>in situ</i> successive monitoring of thin film growth
摘要： A dual chamber system integrated with atomic layer deposition (ALD) and atomic force microscopy (AFM) was developed for the successive monitoring of nanoparticles to thin film growth process. The samples were fabricated in the ALD chamber. A magnetic transmission rod enabled sample transferring between the ALD and the AFM test chambers without breaking the vacuum, avoiding possible surface morphology change when frequently varying the growth condition and oxidation under ambient condition. The sample transmission also avoids deposition and contamination on the AFM tip during the successive testing. The sample stage has machined a group of accurate location pinholes, ensuring the 10 μm2 measurement consistency. As a demonstration, the platinum thin films with different thickness were fabricated by varying ALD cycles. The surface morphology was monitored successively during the deposition. Under vacuum with controlled oxygen partial pressure, the aging and sintering phenomenon of particles has been studied in the AFM testing chamber after high temperature treatment. The integrated AFM/ALD instrument is potentially a powerful system for monitoring the thin film preparation and characterization.
关键词： platinum thin films,atomic force microscopy,in situ monitoring,atomic layer deposition,thin film growth
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur (2018.8.15-2018.8.17)] 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Effect of ZnO Composition on the Electrical Properties of MEH-PPV: ZnO Nanocomposites Thin film via Spin Coating
摘要： Organic semiconductor have been commercialized for optoelectronic device application particularly in organic light emitting diodes (OLEDs). Poly [2-methoxy-5(2’ – ethylhexyloxy)-1, 4- phenylenevinylene), MEH-PPV used in optoelectronic devices because it is easily synthesized and deposited in high molecular weight and good purity. The MEH-PPV: ZnO nanocomposites was prepared by spin coating method at room temperature. The MEH-PPV: ZnO nanocomposites thin film was investigated at different ZnO compositions. The electrical properties showed the ZnO composition at 0.2 wt% exhibits the highest conductivity of nanocomposites thin film (7.40 x 10-1 S. cm-1) and suitable applied in optoelectronic devices.
关键词： MEH-PPV: ZnO nanocomposites thin film,electrical properties,spin coating,ZnO composition
更新于2025-09-04 15:30:14
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Electrical Conductivity of Reduced Graphene Oxide Thin-Film Layers
摘要： This work deals with the research of the electric properties of thin film layer of reduced graphene oxide. A structure of graphene oxide (GO) is represented by randomly distributed on a surface of substrate small islets of graphene with sp2 hybridized bonds surrounded by wide areas with sp3 bonds functionalized by oxygen groups. When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Reduced graphene oxide, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system, therefore the partly semiconductive properties could be observed.
关键词： electrical conductivity,quantum Hall effect,reduced graphene oxide,thin-film layers,sp2 hybridized bonds
更新于2025-09-04 15:30:14
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Tuning the Crystalline Structure and Properties of TiO <i> <sub/>x</sub></i> Thin Films Deposited by DC Reactive Magnetron Sputtering by Adjusting the Ar/O <sub/>2</sub> Ratio
摘要： In this study, TiOx thin films were deposited by DC reactive magnetron sputtering (DC-RMS), using different Ar/O2 ratios in the absence of substrate bias and substrate heating. We observe a gradual change in the crystal structure and stoichiometry of the films with increasing Ar/O2 ratio, enabling to obtain TiOx films either with a pure anatase phase, a mixture between anatase and rutile, or a pure rutile phase. Our experimental results demonstrate that, by fine tuning the Ar/O2 ratio during DC-RMS deposition process, a TiOx thin film with tunable crystal structure and properties (surface morphology, atomic density, index of refraction, and film hardness) can be obtained in a simple way.
关键词： Sputtering,Physical Vapor Deposition,Thin Film,TiO2,Crystal Structure
更新于2025-09-04 15:30:14