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Influence of thickness on the optical properties of Sb doped ZnO thin films
摘要： Sb doped ZnO thin films having various thicknesses have been prepared onto glass substrate by using thermal evaporation method. The atomic compositions of the grown films have been determined by Energy Dispersive Analysis of X-ray (EDAX) method. The optical properties were measured by using a UV-VIS-NIR spectrophotometer (300 to 2500 nm). The EDAX analysis revealed that Sb is doped into the ZnO films. Optical properties showed high absorption coefficient (~105/cm) that direct allowed transition band gap. The optical band gap of the ZnO thin films became reduced due to the doping of Sb.
关键词： Composition,Sb doped ZnO thin films,Optical properties,Thickness
更新于2025-09-23 15:22:29
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Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films
摘要： In this work, the ZnO films are deposited on conducting silicon chips by radio frequency magnetron sputtering. The as-deposited thin films are annealed at 800°C in a N2, O2 and CO+N2 atmosphere for 1h, respectively. The microstructure and electrical properties of the films are comprehensively investigated. XRD studies reveal that the ZnO films have a hexagonal wurtzite structure and they are highly oriented along (002) direction. The surface roughness of ZnO films decreased after annealing, which indicates better film quality. Room temperature PL spectrum is used to investigate the band gap and native defects existing in the films. Defects of thin films for different annealing conditions are analyzed in detail and the possible mechanism of the defects emission is discussed. We suggest that annealing atmosphere of CO+N2 is the most suitable annealing conditions for obtaining ZnO thin films with better crystal quality and good luminescence performance.
关键词： optical properties,ZnO thin films,annealing atmosphere
更新于2025-09-23 15:21:01
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Detailed investigation of photoluminescence, structural, and elemental properties of ZnO thin films under various annealing ambient
摘要： Zinc oxide (ZnO) has extensively exploited the material in the field of optoelectronics due to its inherent wide bandgap and high electron mobility. Properties of ZnO is very sensitive to its deposition methods and conditions. We report the effect of annealing ambient (i.e. argon, nitrogen, oxygen, or vacuum) on the optical, structural and elemental properties of the RF-sputtered ZnO thin films. In this work, we have performed compressive study on the effects of annealing ambient on a donor-bound exciton peak, exciton-exciton and electron-exciton scattering using low temperature (18 K) photoluminescence measurement which is not yet well understood. We have reported dominant on the donor-bound exciton peak with the lowest full width half maximum value (~4.48 nm) for annealing in an oxygen ambient. The annealing ambient strongly influenced the elemental properties of the film and we have reported the reduction in oxygen vacancy with annealing in an oxygen ambient. This work showed that the influence of ex-situ annealing ambient on exciton emission of ZnO thin films and thus providing a tool for enhancing the optical and elemental properties of the film.
关键词： ZnO thin films,Radio-frequency sputtering,X-ray photoelectron spectroscopy,Rapid thermal processing,Photoluminescence
更新于2025-09-23 15:19:57
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Single, co-doping and triple doping Fe element in the ZnO crystal matrices
摘要： Fe element settlement in the ZnO matrices has been investigated through prepared single doped, co-doped with Mg and triple doped with Mg and Cu by a systematic x-ray Photoelectron Spectroscopy (XPS) and Electron Paramagnetic Resonance (EPR) measurements as well as the structural and morphological analysis through x-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) measurements. Also, effects of different solutions, nitrate and chlorate, on the Fe doping has been studied. XRD measurements have exhibited that crystal quality of the thin films deteriorates as the Fe doping level increases. On the other hand, Fe co-doped and triple doped with Mg and Mg + Cu has converted the dominant crystal plane direction from (002) to (101) and (100), respectively. Single Fe doped ZnO thin films has shown the smoothest and uniform thin film surfaces while co-doped and the triple doped thin films has displayed overgrown surface morphology with 3D morphology. The XPS has been used to investigate the chemical environment of the Fe in the ZnO lattice and Fe element has been found to be in the Fe3+ state. Two signals have been observed at g ～ 2.0 and g ～ 4.3 which are attributed an electron trapped into oxygen vacancy and isolated Fe3+ . As the concentration of Fe doping increases, the intensity of g ～ 2.0 signal intensity increases significantly, while the g ～ 4.3 signal intensity increases slowly. Temperature dependence of EPR signals in terms of intensity, linewidth and g-factor been investigated.
关键词： EPR,ZnO thin films,Fe doping,XPS
更新于2025-09-19 17:15:36
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Effect of Cadmium Dopant on Structure and Optical Properties of ZnO Thin Films Prepared by Spray Pyrolysis Technique
摘要： Effect of Cadmium Dopant on Structure and Optical Properties of ZnO Thin Films Prepared by Spray Pyrolysis Technique
关键词： Spray Pyrolysis Technique,Optical Properties,ZnO Thin Films,Cadmium Dopant
更新于2025-09-10 09:29:36
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Comparative study on structure and properties of ZnO thin films prepared by RF magnetron sputtering using pure metallic Zn target and ZnO ceramic target
摘要： In this work, ZnO thin films was deposited onto Si substrate by ablation of different sputtering targets (ZnO ceramic target and pure metallic Zn target) under different substrate temperatures from 300°C to 600°C with intervals of 100°C, and the properties of ZnO thin films were analysed. The results showed that ZnO thin films had the c-axis preferred orientation and it also presented optimised properties owing to the reduction of thin film defects at a substrate temperature of 400°C. By analysing data, it could also be seen that the performance of ZnO thin films fabricated using the ZnO ceramic target was better than that of ZnO thin films fabricated using the pure metallic Zn target. It was considered that the excellent properties of ZnO thin films fabricated using the ZnO ceramic target were attributed to the decrease in oxygen vacancies and the reduction of film defects.
关键词： ZnO ceramic target,RF magnetron sputtering,pure metallic Zn target,ZnO,thin films
更新于2025-09-09 09:28:46
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Study of the Interface of the Early Stages of Growth under Quasi-Equilibrium Conditions of ZnO on Graphene/Cu and Graphite
摘要： The study of the early stages of growth of ZnO on graphene supported on Cu and on highly oriented pyrolytic graphite by means of reactive thermal evaporation of metallic Zn at room temperature is presented. This growth method allows to go in depth in the study of the fundamental interaction between ZnO and graphene at the interface in quasi-equilibrium conditions. Quantitative, chemical, and morphological analysis is performed using photoemission spectroscopy, atomic force, and scanning microscopies as experimental characterization techniques and factor analysis and inelastic peak shape analysis as modeling techniques. The growth of ZnO on a highly oriented pyrolytic graphite substrate is also studied using the same growth method for comparison. The results show that, in spite that the first atomic layer of both substrates is identical, the growth kinetics and morphology of the deposits are completely different. A model for the kinetics of the growth of ZnO on both substrates is proposed.
关键词： X-ray photoemission spectroscopy,early stages of growth,ZnO/graphene interfaces,atomic force microscopy,nanostructured ZnO thin films
更新于2025-09-04 15:30:14
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Effect of microstructural changes in the biological behavior of magnetron sputtered ZnO thin films
摘要： This work is focused on the evaluation of the correlation between the microstructural changes of zinc oxide (ZnO) thin films and its biological behavior. For this study, ZnO thin films were prepared by reactive magnetron sputtering, using different deposition times and reactive gas (O2) flows, and tested against a fungal pathogenic species, Candida albicans. Results showed that the increase of thickness of the films did not affect significantly the surface roughness but changed the crystalline structure of the films (ZnO in the hcp structure), which was followed by a small increase of antifungal properties, leading to a decrease of viable cells. The decrease of O2 flow in the deposition chamber affected the roughness only slightly (roughly 1 nm difference between the different films) but resulted in a clear decrease in the crystallinity of thin films, which improved even further their antifungal activity. These results seem to indicate a correlation between structural features and the antifungal behavior of the ZnO thin films, which will be shown by different analyses. When tested against the fungal species, the films showed to be capable of reducing the growth rate and inhibit their growth, leading to a low number of microbial cells at the end of the experiment. A deeper analysis by flow cytometry on how the thin films affected the microbial cells showed a reduced global enzymatic activity in yeast cells after contact with the materials’ surface.
关键词： antifungal properties,magnetron sputtering,ZnO thin films,microstructural changes,biological behavior
更新于2025-09-04 15:30:14