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AIP Conference Proceedings [Author(s) PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON AUTOMOTIVE INNOVATION GREEN ENERGY VEHICLE: AIGEV 2018 - Kuantan, Malaysia (25–26 July 2018)] - Chemical bath deposition of In2S3 thin films as promising material and buffer layer for solar cells
摘要： The copper(I) and indium thin films are obtained by chemical bath deposition (CBD). Their elemental composition and microstructure were particularly studied by means of the x-ray photoelectron spectroscopy (XPS). The change in the surface microstructure of thin films depending on the temperature and the composition of reaction bath were determined by means of scanning electron microscopy (SEM).
关键词： chemical bath deposition,solar cells,thin films,buffer layer,In2S3
更新于2025-11-21 11:20:48
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Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application
摘要： Tin monosulphide (SnS) thin films capped by PVA have been successfully deposited on glass substrates for cost effective photovoltaic device applications by a simple and low-cost wet chemical process, chemical bath deposition (CBD) at different bath temperatures varying in the range, 50–80 °C. X–ray diffraction analysis showed that the deposited films were polycrystalline in nature, showing orthorhombic structure with an intense peak corresponding to (040) plane of SnS. These observations were further confirmed by Raman analysis. FTIR spectra showed the absorption bands which corresponds to PVA in addition to SnS. The scanning electron microscopy and atomic force microscopy studies revealed that the deposited SnS films were uniform and nanostructured with an average particle size of 4.9 to 7.6 nm. The optical investigations showed that the layers were highly absorbing with the optical absorption coefficient ~105 cm–1. A decrease in optical band gap from 1.92 to 1.55 eV with an increase of bath temperature was observed. The observed band gap values were higher than the bulk value of 1.3 eV, which might be due to quantum confinement effect. The optical band gap values were also used to calculate particle size and the results are discussed.
关键词： structural properties,optical properties,SnS thin films,polyvinyl alcohol,capping agent,chemical bath deposition
更新于2025-11-21 11:18:25
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Chemical bath deposition of SnS:In thin films for Pt/CdS/SnS:In/Mo photocathode
摘要： SnS:In thin ?lms have been deposited on Mo substrates by chemical bath deposition method in acidic solution. The in?uences of di?erent In-doped concentrations on the morphological, structural, optical properties and phase purities of SnS thin ?lms have been investigated. Many sheet-like particles exist in the deposited SnS:In thin ?lms. The doping of indium will decrease the thicknesses of the deposited thin ?lms. The studies of photo-electrochemical (PEC) properties of SnS:In (In,10 at.%) thin ?lms indicate that their PEC properties are enhanced by the annealing process. The fabrication of Pt/CdS/annealed SnS:In/Mo photocathode can further enhance the photo-current density to 0.790 mA·cm?2 at ?0.4 V.
关键词： Thin ?lms,Chemical bath deposition,SnS,Photocurrent
更新于2025-09-23 15:21:21
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Enhancement in the performance of nanostructured CuOa??ZnO solar cells by band alignment
摘要： In this study, we investigated the effect of cobalt doping on band alignment and the performance of nanostructured ZnO/CuO heterojunction solar cells. ZnO nanorods and CuO nanostructures were fabricated by a low-temperature and cost-effective chemical bath deposition technique. The band offsets between Zn1?xCoxO (x = 0, 0.05, 0.10, 0.15, and 0.20) and CuO nanostructures were estimated using X-ray photoelectron spectroscopy and it was observed that the reduction of the conduction band offset with CuO. This also results in an enhancement in the open-circuit voltage. It was demonstrated that an optimal amount of cobalt doping could effectively passivate the ZnO related defects, resulting in a suitable conduction band offset, suppressing interface recombination, and enhancing conductivity and mobility. The capacitance–voltage analysis demonstrated the effectiveness of cobalt doping on enhancing the depletion width and built-in potential. Through impedance spectroscopy analysis, it was shown that recombination resistance increased up to 10% cobalt doping, thus decreased charge recombination at the interface. Further, it was demonstrated that the insertion of a thin layer of molybdenum oxide (MoO3) between the active layer (CuO) and the gold electrode hinders the formation of a Schottky junction and improved charge extraction at the interface. The ZnO/CuO solar cells with 10% cobalt doped ZnO and 20 nm thick MoO3 buffer layer achieved the best power conversion efficiency of 2.11%. Our results demonstrate the crucial role of the band alignment on the performance of the ZnO/CuO heterojunction solar cells and could pave the way for further progress on improving conversion efficiency in oxide-based heterojunction solar cells.
关键词： nanostructured,solar cells,X-ray photoelectron spectroscopy,power conversion efficiency,molybdenum oxide,chemical bath deposition,band alignment,CuO–ZnO,cobalt doping
更新于2025-09-23 15:21:01
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Profound optical analysis for novel amorphous Cu2FeSnS4 thin films as an absorber layer for thin film solar cells
摘要： In this study, quaternary kesterite Cu2FeSnS4 (CFTS4) has been selected due to its interesting optical and electrical characteristics. The CFTS4 films were prepared by exploiting the chemical bath deposition process at room temperature. The films were prepared at different deposition periods (1, 3, 5 and 7 h). The EDAX technique was helped in evaluating the compositional element ratio which near to 2:1:1:4. The morphology and structure of CFTS4 films have been examined by utilizing X-ray diffraction, and field emission scanning electron microscope techniques. XRD charts revealed the absence of sharp peaks and approved the amorphous nature of films under investigations. The transmittance and reflectance data were employed to compute the linear and nonlinear optical constants of the as-deposited CFTS4 films. The energy gap calculations for the CFTS4 films grown on glass substrate displayed a direct energy gap and by increasing the deposition time, a reduction in energy gap values from 1.41 to 1.19 eV was obtained. The deep analysis of linear/nonlinear optical properties as a function of deposition time has revealed many characteristics of the investigated films. Moreover, the nonlinear parameters (refractive index n2, nonlinear absorption coefficient βc and the third-order nonlinear optical susceptibility χ(3)) of the CFTS4 films were boosted with rising up the film thickness and their high values imply the possibility of utilizing these films in various optoelectronic applications.
关键词： Optical conductivity,Energy gap,Optoelectronic applications,Chemical bath deposition technique,CFTS4 thin films
更新于2025-09-23 15:21:01
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Effect of energy band misalignment and morphology in In <sub/>2</sub> O <sub/>3</sub> -CNTs on electron transport in dye-sensitized solar cell
摘要： This study provides important insights in performance degradation of In2O3-MWCNTs (0.4 and 0.5 wt.%)-based dye-sensitized solar cell (DSSC) using chemical-bath deposition technique. In2O3-MWCNTs (0.4 wt.%) exhibited the highest power conversion efficiency of 0.312% with low electron recombination rate, keff of 1256.72 s?1, and faster electron lifetime, seff of 0.80 ms compared to In2O3-MWCNTs (0.5 wt.%). The energy band misalignment between the conduction band of In2O3 photoanode and FTO caused severe electron recombination in In2O3-MWCNTs (0.5 wt.%). Therefore, this study can be used as a benchmark of 0.4 wt.% as the optimum concentration of MWCNTs in In2O3 for DSSC.
关键词： electron transport,optical,dye-sensitized solar cells,Chemical-bath deposition,In2O3-CNTs
更新于2025-09-23 15:21:01
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Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates
摘要： We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.
关键词： chemical bath deposition,nanoscale heterojunctions,ZnO nanorods,nanoprobe in the scanning electron microscope,current-voltage characteristics,annealing,focused ion beam patterning
更新于2025-09-23 15:19:57
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Comparative studies of CdS thin films by chemical bath deposition techniques as a buffer layer for solar cell applications
摘要： Cadmium sulfide (CdS) buffer layer that decouples the absorber layer and window layer in thin-film solar cells was synthesized by two different chemical bath deposition (CBD) techniques with varying deposition parameters. X-ray diffraction (XRD) revealed that the CdS thin film crystallizes in a stable hexagonal wurtzite structure having a preferential orientation along (002) reflection plane with a crystallite size varying from 20 to 40 nm. First longitudinal optical phonon mode was identified at Raman shift of 305 cm?1. Uniform, granular, continuous, and smooth surface with an average grain sizes (< 100 nm) as well as small roughness (< 9 nm) was observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. The symmetric composition of cadmium and sulfur along with larger grains (20 nm) was observed at higher deposition temperatures and times. The optical band gap of CdS samples obtained from process one was in the range of 2.3–2.35 eV, while the band gap by the second CBD process lay in between 2.49 and 2.65 eV, showing the most stable compound of CdS. The presence of a green emission band in photoluminescence spectra (PL) demonstrated that the CdS material has better crystallinity with minimum defect density. Hall effect studies revealed the n-type conductivity of CdS thin films with a carrier concentration values in the order of 1016 cm?3. Furthermore, CdS thin films fabricated by CBD process exposed better quality that might be more suitable material as a buffer layer for thin-film solar cells.
关键词： solar cells,buffer layer,optical properties,electrical properties,chemical bath deposition,CdS thin films
更新于2025-09-23 15:19:57
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Fabrication and Characterization of Ni-Doped ZnO Nanorod Arrays for UV Photodetector Application
摘要： In this work, the structure morphologies, lattices, and optical properties of zinc oxide (ZnO) nanorods (NRs) with various amounts of nickel (Ni) dopants were investigated and explored. The 100 nm ZnO seed layer was grown on the Corning glass substrate by the radio frequency (RF) magnetron sputtering technique, and the chemical bath deposition (CBD) method was used to grow NR arrays. It was found that the Ni concentration of the sample is 1.06 at% by EDX spectra examination. All the NRs exhibited a hexagonal wurtzite structure and preferentially grew along the c-axis on the substrate. Additionally, the ultraviolet (UV) photodetectors (PDs) with Ni-doped ZnO (NZO) NRs based on metal-semiconductor-metal (MSM) structure were fabricated through a photolithography process. Then, such a sample was annealed at 500 °C to obtain good performance and reduced oxygen vacancy (～560 nm). The results showed that the NZO NRs were with an excellent photosensitivity for UV PD applications and a faster rise/decay time than pure ZnO. Furthermore, with a 3 V applied bias and 380 nm UV illumination, the sensitivities of the fabricated ZnO PDs with different Ni contents (0, 4, and 8 mM) were 71.45, 393.04, and 238.75, respectively.
关键词： nanorod arrays,photolithography process,chemical bath deposition,UV photodetector,Ni-doped ZnO
更新于2025-09-23 15:19:57
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The Optical Properties and Photo catalytic Activity of ZnS-TiO2/Graphite Under Ultra Violet and Visible Light Radiation
摘要： This paper discuss research about the optical properties and photo catalytic activity of TiO2 film on graphite substrate and its modification with ZnS. The optical properties investigated are the light response at various light wavelength and the gap energy (Eg). Meanwhile, the photocatalytic activity was studied from isopropanol degradation to determine the Quantum Yield (QY) and kinetics of reaction. The results show that the TiO2 layer is consisted of rutile and anatase phases. Meanwhile, the ZnS peaks are at 2θ 27.91o and 54.58o. The gap energy of TiO2/G consist of two band gap represent- ing the band gap of rutile and anatase. The ZnS deposition shifted the band gap into single gap of 3.40 eV which is in between the gap energy of single TiO2 and single ZnS. The isopropanol degradation with TiO2/G photocatalyst under visible light radiation did not produce any new peaks representing product. Meanwhile, the photocatalytic process under 380 nm light produce new peaks representing the elec- tronic transition of acetone. The isopropanol degradation with ZnS-TiO2/Graphite produced new peaks that indicates the photocataytic activity of ZnS-TiO2/Graphite whether under UV or visible light radia- tion. Significant role of ZnS also proven by the increase of the QY values and the increase of rate con- stant, k. ? 2015 BCREC UNDIP. All rights reserved.
关键词： photo catalytic activity,ZnS,chemical bath deposition,TiO2,composite
更新于2025-09-23 15:19:57