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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Transmission Electron Microscopy Study of UV-ozone Cleaned Silicon Surfaces for Application in High Efficiency Photovoltaics
摘要： We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a ?eld-assisted superlinear threshold selector. The selector offers high selectivity of >107, sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125 °C, and endurance of >1011. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <10 pA while offering >102 memory ON/ OFF ratio and >106 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.
关键词： selectivity,cross-point memory,select device,resistive random access memory (RRAM),sneak path,1S1R
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - High Phosphorus-doped Seed Layer in Microcrystalline Silicon Oxide Front Contact Layers for Silicon Heterojunction Solar Cells
摘要： We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of >107, sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125 °C, and endurance of >1011. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <10 pA while offering >102 memory ON/OFF ratio and >106 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.
关键词： sneak path,cross-point memory,select device,resistive random access memory (RRAM),1S1R,selectivity
更新于2025-09-23 15:19:57
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Hybrid III-Nitride Tunnel Junctions for Low Excess Voltage Blue LEDs and UVC LEDs
摘要： We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a ?eld-assisted superlinear threshold selector. The selector offers high selectivity of >107, sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125 °C, and endurance of >1011. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <10 pA while offering >102 memory ON/ OFF ratio and >106 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.
关键词： sneak path,cross-point memory,select device,resistive random access memory (RRAM),1S1R,selectivity
更新于2025-09-16 10:30:52