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oe1(光电查) - 科学论文

308 条数据
?? 中文(中国)
  • Laser Direct Writing Assisted Fabrication of Skin Compatible Metal Electrodes

    摘要: Skin-compatible electrodes have been studied intensively for its application in wearable electronics. To satisfy various deformations of electronic skin, it requires to fabricate a highly conductive, mechanically stable, flexible, and stretchable electrode. Here, a feasible laser direct writing (LDW) process is carried out to fabricate micro-spring structured metal electrodes. The metal electrodes show high conductivity and transparency with sheet resistance of 4.8 ohm per square and at transmittance of 83%. It is worthy of noting that, the metal electrodes have an excellent mechanical–electrical stability, where stretching over 75% and bending over 5000 times induces resistance variance less than 5% and 2%, respectively. The excellent mechanical and electrical behavior of the micro-spring metal electrodes are promising to be useful for wearable electronics. The LDW process may facilitate the design and prototype of the skin compatible metal electrodes in the coming future.

    关键词: wearable electronics,skin-compatible electrodes,electro-deposition,laser direct writing

    更新于2025-09-23 15:21:01

  • Dynamic range and resolving power of the Timepix detector to heavy charged particles

    摘要: The spectrometric and particle tracking response of the Timepix detector for charged particle detection was examined for energetic (i.e. penetrating) heavy charged particles in a wide range of energies and directions. The aim of this study was to examine the detector’s resolving power including particles approaching the minimum-ionizing regime, in particular energetic protons. The per-pixel energy range, of importance namely for heavy charged particles, was also investigated. This work complements and extends the ongoing task to analyze and describe the response and resolving power of the detector in a wide range of particle types, energy (energy loss) and direction. The methodology of event discrimination in terms of these degrees of freedom was expanded and re?ned. Resolution and event classi?cation were based on analyses of cluster morphology parameters together with spectrometric, tracking and correlated derived quantities such as linear-energy-transfer (LET) and ratio cluster height to cluster path length.

    关键词: Particle tracking detectors (Solid-state detectors),dE/dx detectors,Pixelated detectors and associated VLSI electronics,Heavy-ion detectors

    更新于2025-09-23 15:21:01

  • Growth mechanisms of F4-TCNQ on inorganic substrates and nanostructures

    摘要: The organic semiconductor tetrafluorotetracyanoquinodimethane (F4-TCNQ) is a promising candidate for the doping of organic semiconductors, two-dimensional materials and inorganic compounds, such as ZnO, and also to enhance the charge carrier injection at contacts in organic electronics. In order to evaluate its applicability as a functionalization material or as an electrically active part in devices, we present a systematic study on the growth mode of F4-TCNQ beyond the first few monolayers on different inorganic substrates that cover a broad variety regarding their physical, chemical and morphological surface properties. The materials used are silicon, silicon carbide, graphene on silicon, sapphire, nanocrystalline diamond, as well as gallium nitride (GaN) layers and nanowire arrays. While the surface termination influences the shape and morphology of the islands of F4-TCNQ which form on all substrates investigated, no significant dependence of the growth mode on the substrate doping type and concentration is observed. GaN nanowires are found to act as nucleation sites for F4-TCNQ islands and to be covered by few monolayers of F4-TCNQ forming a closed coaxial shell. In conclusion, F4-TCNQ is identified to nucleate via Stranski-Krastanov growth consisting of monolayers and islands of different size and shape. The findings in this work provide basic growth information for the implementation of F4-TCNQ as functionalization material for nanowire-based applications.

    关键词: GaN nanowires,surface functionalization,growth mode,organic semiconductors,organic electronics,surface doping,F4-TCNQ

    更新于2025-09-23 15:21:01

  • [IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - High-Responsivity Flexible Photodetectors based on MOVPE-MoS <sub/>2</sub>

    摘要: We have presented flexible MSM photodetectors based on MOVPE-MoS2. These photosensing devices with high dynamic ranges up to 83dB and high responsivities of up to 550 A/W at low bias make this scalable approach a perfect candidate for future optical sensors in the medical field in which bendable electronics is highly desired. The MOVPE-MoS2 on wafer scale is also interesting for MoS2 FETs with high current on/off ratios of six orders of magnitude, fabricated with standard contact lithography enabling large-scale flexible electronic circuits.

    关键词: 2D materials,MoS2,MOVPE,photodetectors,flexible electronics

    更新于2025-09-23 15:21:01

  • Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide

    摘要: In this study, we present the feasibility to fabricate back-gated graphene field-effect transistors (GFETs) on 10 nm thermal SiO2 substrate. Here, we compare the mobility of graphene devices at different locations of the transferred CVD graphene. We observed that there is a n-type doping of the graphene devices with Dirac points within ± 0.5 V from an ideal value of 0 V. The downscaling of the back-gate dielectric thickness reduces the operating voltage range, commonly required for low power electronics, and the devices are stable during operation in air under ambient conditions. The extracted contact resistance is comparable to the earlier reports found in literature and this provides a feasibility to fabricate low power futuristic graphene based nanoelectronics.

    关键词: CVD graphene,n-type doping,thermal SiO2,mobility,Dirac points,low power electronics,field-effect transistors,graphene,contact resistance

    更新于2025-09-23 15:21:01

  • Contents: (Adv. Funct. Mater. 36/2018)

    摘要: In article number 1800802, Hyunjoo J. Lee and co-workers present a calcium-modified silk fibroin film as a strong adhesive for next-generation epidermal electronics. The modified silk film exhibits viscoelastic properties and can mechanically interlock a sensor and the skin surface ~20 times stronger than commercial alternatives. Additional interesting characteristics, such as good biocompatibility, reusability, stretchability, and conductivity show promise for widespread application.

    关键词: epidermal electronics,biocompatibility,conductivity,silk fibroin,reusability,stretchability

    更新于2025-09-23 15:21:01

  • Infrared Cameras in Electronics Development

    摘要: There has been a distinct trend in electronics development in the last few years: Packing density is increasing. Today, modern smartphones are much more powerful than they were only a few years ago, yet they are no bigger. The same applies to IT devices, automobile electronics, and consumer electronics. Accordingly, problems caused by heating must be looked out for with great care. Modern infrared measurement technology is an important aid in this regard.

    关键词: electronics development,heat dissipation,Infrared cameras,semiconductor devices,temperature measurement,power loss

    更新于2025-09-23 15:21:01

  • Untangling Photofaradaic and Photocapacitive Effects in Organic Optoelectronic Stimulation Devices

    摘要: Light, as a versatile and non-invasive means to elicit a physiological response, offers solutions to problems in basic research as well as in biomedical technologies. The complexity and limitations of optogenetic methods motivate research and development of optoelectronic alternatives. A recently growing subset of approaches relies on organic semiconductors as the active light absorber. Organic semiconductors stand out due to their high optical absorbance coefficients, mechanical flexibility, ability to operate in a wet environment, and potential biocompatibility. They could enable ultrathin and minimally invasive form factors not accessible with traditional inorganic materials. Organic semiconductors, upon photoexcitation in an aqueous medium, can transduce light into (1) photothermal heating, (2) photochemical/photocatalytic redox reactions, (3) photocapacitive charging of electrolytic double layers, and (4) photofaradaic reactions. In realistic conditions, different effects may coexist, and understanding their role in observed physiological phenomena is an area of critical interest. This article serves to evaluate the emerging picture of photofaradaic vs. photocapacitive effects in the context of our group’s research efforts and that of others over the past few years. We present simple experiments which can be used to benchmark organic optoelectronic stimulation devices.

    关键词: neurostimulation,photostimulation,bioelectronics,organic electronics,photoelectrochemistry

    更新于2025-09-23 15:21:01

  • LOCx2-130, a low-power, low-latency, 2 × 4.8-Gbps serializer ASIC for detector front-end readout

    摘要: In this paper, we present the design and test results of LOCx2-130, a low-power, low-latency, dual-channel transmitter ASIC for detector front-end readout. LOCx2-130 has two channels of encoders and serializers, and each channel operates at 4.8 Gbps. LOCx2-130 can interface with three types of ADCs, an ASIC ADC and two COTS ADCs. LOCx2-130 is fabricated in a commercial 130-nm CMOS technology and is packaged in a 100-pin QFN package. LOCx2-130 consumes 440 mW and achieves a latency of less than 40.7 ns.

    关键词: Trigger concepts and systems (hardware and software),Digital electronic circuits,Front-end electronics for detector readout

    更新于2025-09-23 15:21:01

  • Macro Pixel ASIC (MPA): the readout ASIC for the pixel-strip (PS) module of the CMS outer tracker at HL-LHC

    摘要: The CMS tracker at HL-LHC is required to provide prompt information on particles with high transverse momentum to the central Level 1 trigger. For this purpose, the innermost part of the outer tracker is based on a combination of a pixelated sensor with a short strip sensor, the so-called Pixel-Strip module (PS). The readout of these sensors is carried out by distinct ASICs, the Strip Sensor ASIC (SSA), for the strip layer, and the Macro Pixel ASIC (MPA) for the pixel layer. The processing of the data directly on the front-end module represents a design challenge due to the large data volume (30720 pixels and 1920 strips per module) and the limited power budget. This is the reason why several studies have been carried out to ?nd the best compromise between ASICs performance and power consumption. This paper describes the current status of the MPA ASIC development where the logic for generating prompt information on particles with high transverse momentum is implemented. An overview of the readout method is presented with particular attention on the cluster reduction, position encoding and momentum discrimination logic. Concerning the architectural studies, a software test bench capable of reading physics Monte-Carlo generated events has been developed and used to validate the MPA design and to evaluate the MPA performance. The MPA-Light is scheduled to be submitted for fabrication this year and will include the full analog functions and a part of the digital logic of the ?nal version in order to qualify the chosen VLSI technology for the analog front-end, the module assembly and the low voltage digital supply.

    关键词: Digital electronic circuits,Data reduction methods,Pixelated detectors and associated VLSI electronics

    更新于2025-09-23 15:21:01