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Subwavelength-scale nanorods implemented hexagonal pyramids structure as efficient light-extraction in Light-emitting diodes
摘要： Subwavelength-scale nanorods were implemented on the hexagonal pyramid of photochemically etched light-emitting diodes (LEDs) to improve light extraction efficiency (LEE). Sequential processes of Ag deposition and inductively coupled plasma etching successfully produce nanorods on both locally unetched flat surface and sidewall of hexagonal pyramids. The subwavelength-scale structures on flat surface offer gradually changed refractive index, and the structures on side wall of hexagonal pyramid reduce backward reflection, thereby enhancing further enhancement of the light extraction efficiency. Consequently, the nanorods implemented LED shows a remarkable enhancement in the light output power by 14% compared with that of the photochemically etched LEDs which is known to exhibit the highest light output power. Theoretical calculations using a rigorous coupled wave analysis method reveal that the subwavelength-scale nanorods are very effective in the elimination of TIR as well as backward reflections, thereby further enhancing LEE of the LEDs.
关键词： subwavelength-scale nanorods,light-emitting diodes,light extraction efficiency,hexagonal pyramids,photochemical etching
更新于2025-09-23 15:21:01
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Light extraction from quantum dot light emitting diodes by multiscale nanostructures
摘要： Improving the light extraction efficiency by introducing optical–functional structures outside of quantum dot light emitting diodes (QLED) for further enhancing the external quantum efficiency (EQE) is essential for its application in display and lighting industrialization. Although the efficiency of QLED has been optimized by controlling of the synthesis of the quantum dots, the low outcoupling efficiency is indeed unresolved because of total internal reflections, waveguides and metal surface absorptions within the device. Here, we are utilizing multiscale nanostructures attaching to the outer surface of the glass substrate to extract the trapped light from the emitting layers of QLED. The result indicates that both the EQE and luminance are improved from 12.29% to 17.94% and 122400 cd m-2 to 178700 cd m-2, respectively. The maximum EQE and current efficiency improve to 21.3% and 88.3 cd A?1, respectively, which are the best performance among reported green QLED with light outcoupling nanostructures. The improved performance is ascribed to eliminate total internal reflection by multiscale nanostructures attached to the outer surface of the QLED. Additionally, the simulation result of Finite-difference time domain (FDTD) also demonstrates the light trapping effect is reduced by the multiscale nanostructures. The design of the novel light outcoupling nanostructure for further improving the efficiency of QLED can promote its application in display and lighting industrializations.
关键词： quantum dot light emitting diodes,multiscale nanostructures,light extraction efficiency,external quantum efficiency,display and lighting industrialization
更新于2025-09-23 15:19:57
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Highly Efficient Tandem White OLED Using a Hollow Structure
摘要： A simple fabrication method for a light extraction layer is required. In this report, an internal light extraction layer composed of a high refractive index material and an air void is fabricated in five steps. A direct printing process followed by annealing of the randomly arrayed poly(benzyl methacrylate) pillars after a planarization process using TiO2-nanoparticle dispersed resist and sol is used. These substrates are used for light extraction in white tandem organic light emitting diodes (WOLEDs). By combining the hollow structure and hemi-spherical lens, WOLEDs without and with the light extraction structures are found to show maximum external quantum efficiencies of 35.6% and 103%, respectively. The power efficiencies at 100 cd m?2 of the WOLEDs without and with the light extraction structures are found to be 26.5 and 93.2 lm W?1, respectively. A color rendering index of 86.4, correlated color temperature of 4860 K, and CIE of (0.353, 0.389) are achieved in the WOLEDs with light extraction structures.
关键词： organic light emitting diodes,high refractive index,light extraction efficiency,nanoimprint lithography,light scattering layers
更新于2025-09-23 15:19:57
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Enhanced Optical Output of Near-Ultraviolet Light-Emitting Diodes by a Monolayer of Nanospheres
摘要： The optical output of near-ultraviolet (NUV) light-emitting diodes (LEDs) was improved by including a monolayer of hexagonal close-packed polystyrene (PS) nanospheres. PS nanospheres with different sizes were deposited on the indium tin oxide layer of the NUV LEDs. The electroluminescence results showed that the light extraction efficiency of the NUV LEDs was increased by the inclusion of PS nanospheres, and the maximum optical output enhancement was obtained when the size of the nanospheres was close to the light wavelength. The largest enhancement of the optical output of 1.27-fold was obtained at an injection current of 100 mA. The enhanced optical output was attributed to part of the incident light beyond the critical angle being extracted when the exit surface of the NUV LEDs had a PS nanosphere monolayer. This method may serve as a low-cost and effective approach to raise the efficiency of NUV LEDs.
关键词： polystyrene nanospheres,optical output enhancement,near-ultraviolet,light-emitting diodes,light extraction efficiency
更新于2025-09-23 15:19:57
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Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
摘要： Using finite-difference time-domain method, the light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) is investigated. Simulation results show that compared to flat sapphire substrate, the nano-patterned sapphire substrate (NPSS) expands the extraction angles of top surface and sidewalls. As a result, the LEE of transverse-magnetic (TM) polarized light is improved significantly. Roughening on the backside of n-AlGaN surface significantly enhances the LEE of top surface of thin-film flip-chip DUV LEDs. However, the LEE of sidewalls of thin-film flip-chip DUV LEDs is greatly weakened. For bare DUV LED, the LEE of flip-chip LED on NPSS is estimated to be about 15%, which is around 50% higher than that of thin-film flip-chip DUV LED with roughening on the backside of n-AlGaN surface.
关键词： AlGaN,nano-patterned sapphire substrate,light-emitting diodes,deep-ultraviolet,light extraction efficiency
更新于2025-09-23 15:19:57
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Thin-film flip-chip UVB LEDs realized by electrochemical etching
摘要： We demonstrate a thin-?lm ?ip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacri?cial Al0:37Ga0:63N layer. The electroluminescence spectrum of the TFFC LED corresponds well to the as-grown LED structure, showing no sign of degradation of structural and optical properties by electrochemical etching. This is achieved by a proper epitaxial design of the sacri?cial layer and the etch stop layers in relation to the LED structure and the electrochemical etch conditions. Enabling a TFFC UV LED is an important step toward improving the light extraction ef?ciency that limits the power conversion ef?ciency in AlGaN-based LEDs.
关键词： Thin-film flip-chip,AlGaN,light extraction efficiency,UVB LEDs,electrochemical etching
更新于2025-09-23 15:19:57
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AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates
摘要： The disinfection industry would greatly benefit from efficient, robust, high-power deep-ultraviolet light-emitting diodes (UV-C LEDs). However, the performance of UV-C AlGaN LEDs is limited by poor light-extraction efficiency (LEE) and the presence of a large density of threading dislocations. We demonstrate high power AlGaN LEDs grown on SiC with high LEE and low threading dislocation density. We employ a crack-free AlN buffer layer with low threading dislocation density and a technique to fabricate thin-film UV LEDs by removing the SiC substrate, with a highly selective SF6 etch. The LEDs (278 nm) have a turn-on voltage of 4.3 V and a CW power of 8 mW (82 mW/mm2) and external quantum efficiency (EQE) of 1.8% at 95 mA. KOH submicron roughening of AlN surface (nitrogen-polar) and improved p-contact reflectivity are found to be effective in improving the LEE of UV light. We estimate the improved LEE by semi-empirical calculations to be 33% (without encapsulation). This work establishes UV LEDs grown on SiC substrates as a viable architecture to large-area, high-brightness, and high power UV LEDs.
关键词： AlGaN LEDs,UV-C LEDs,light extraction efficiency,disinfection technology,AlN,external quantum efficiency,SiC,substrate removal
更新于2025-09-19 17:13:59
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P‐9.1: QD based color converter with DBR Structure and its application on Micro‐LED
摘要： An enhancement of light extraction efficiency of quantum dots (QD) (LEDs) with Bi-functional TiO2/Al2O3 distributed Bragg reflector (DBR) nanolaminate structure grown by atomic layer deposition (ALD) has been demonstrated. The DBRs were simulated and optimized with TFCalc, and they exhibited excellent and tunable optical properties, as well as reliable moisture barrier performance. These DBRs were integrated in the QD-LED, enabling an obvious increase in red emission and a strong decrease in blue light transmittance, which can achieve color conversion greatly. Furthermore, these DBRs can prolong the lifetime of QDs evidently by isolating the QDs from the moisture vapor. These results highlight the potential application of DBRs in the QLEDs and QD-LEDs.
关键词： atomic layer deposition (ALD),simulation,distributed Bragg reflector (DBR),water vapor transmission rates (WVTR),light extraction efficiency
更新于2025-09-19 17:13:59
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Improving the performance of light-emitting diodes via plasmonic-based strategies
摘要： Light-emitting diodes (LEDs), featuring long lifetime, small size, and low energy consumption, are increasingly popular for displays and general light sources. In the past decades, new light-emitting materials and novel device configurations are being continuously investigated to obtain highly efficient LEDs. Nevertheless, the unsatisfying external quantum efficiency severely limits their commercial implementation. Among all the approaches to boost the efficiency of LEDs, the incorporation of plasmonic structures exhibits great potential in increasing the spontaneous emission rates of emitters and improving the light extraction efficiency. In this Perspective, the methods to deal with challenges in quantum-well-based LEDs and organic LEDs by employing plasmonic materials are described, the mechanisms of plasmonic-based strategies to improve the light generation and extraction efficiency are discussed, and the plasmonic control over directional emission of phosphors is introduced as well. Moreover, important issues pertaining to the design, fabrication, and manipulation of plasmonic structures in LEDs to optimize the device performance, as well as the selection roles in finding appropriate plasmonic materials and structures for desired LED devices, are explained. This perspective lists the challenges and opportunities of plasmonic LEDs, with the aim of providing some insights into the future trends of plasmonic LEDs.
关键词： spontaneous emission rates,light-emitting diodes,light extraction efficiency,external quantum efficiency,plasmonic structures
更新于2025-09-16 10:30:52
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Effect of photonic crystals on the light extraction of GaN-based LED for different polarization modes of spontaneous radiation
摘要： The light extraction efficiency (LEE) of different polarization modes have been simulated by FDTD solutions for three photonic crystal (PhC) structures, which are spherical-PhC LED, cylindrical-PhC LED and compound-PhC LED. The TE-and TM-mode LEE are simulated seperately. It shows that the discontinuity of the structure from the propagation direction will cause decrease of TE-mode and TM-mode LEE. TE and TM mode are enhanced by 60% and 40% in cylindrical-PhC LED, in which the single nanorod act as light waveguide. Finally, a multi-layer-compound-PhC-LED is proposed. Results show that the TM-mode LEE based on this structure is increased by 1.45 times at a wavelength of 532 nm, and the TM-mode illuminous intensity will be larger than that of TE mode, and then polarization inversion occurs.
关键词： GaN-based LED,Polarization,Photonic crystals,Light extraction efficiency
更新于2025-09-12 10:27:22