- 标题
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- 实验方案
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Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates
摘要： Monolithically integrated enhancement/depletion-mode (E/D-mode) GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) and inverters, were fabricated on an ultrathin-barrier (UTB) AlGaN/GaN heterostructure grown on Si substrates. By employing a graded AlGaN back barrier in the UTB-AlGaN/GaN heterostructure, a high threshold voltage (VTH) of +3.3 V is achieved in the E-mode MIS-HEMTs. The fabricated MIS-HEMT inverter features a high logic swing voltage of 7.76 V at a supply voltage of 8 V, a small VTH hysteresis as well as deviation less than 0.2 V. The UTB AlGaN/GaN-on-Si technology provides a good platform for integration of MIS-gate-based drivers and power transistors.
关键词： monolithic integration,ultrathin-barrier,GaN,E/D-mode,MIS-HEMT,inverter,AlGaN/GaN heterostructure,Si substrate
更新于2025-09-23 15:22:29
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Nanoscale Light Sources for Optical Interconnects
摘要： This editorial is aimed at addressing two key aspects of nanoscale light sources: (1) low-power optical communication and (2) crystallographic defect engineering for monolithic integration with silicon. We will further discuss opportunities and challenges for nanoscale light sources for next generation, high density optical interconnect. Designing and prototyping light sources with sub light wavelength dimensions has been the topic of keen interest because of their versatility in optical communication. For example, nano light sources can operate at hundreds of GHz [1,2] which is not possible with conventional light sources [3]. In addition, power consumption in interconnects with these light sources can be reduced by omitting the modulator and using direct source modulation to encode optical data [4]. There are a number of nano light sources under investigation: (i) small photonic mode laser [5-9], (ii) plasmonic lasers [10,11] (iii) photonic-plasmonic hybrid lasers [12-15] and (iv) nanoscale LEDs [16,17]. Pros and cons of these nano light sources are discussed below.
关键词： crystallographic defect engineering,optical interconnects,low-power optical communication,Nanoscale light sources,monolithic integration
更新于2025-09-23 15:21:01
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Characterization of a Low-Cost, Monolithically Integrated, Tunable 10G Transmitter for Wavelength Agile PONs
摘要： Dynamically reconfigurable passive optical networks (PONs) using time-division multiplexing and dense wavelength division multiplexing will require low-cost, high-performance customer premises equipment to be economically viable. In particular, substantial cost savings can be achieved through the use of efficient re-growth free, foundry-compatible fabrication techniques. Using this strategy, this paper presents the first detailed characterization of a monolithically integrated transmitter comprised of a discretely tunable slotted Fabry–Pérot ridge waveguide laser, an absorptive modulator and a semiconductor optical amplifier (SOA) produced using a standard off-the-shelf AlInGaAs/InP multiple quantum well epitaxial structure. This first generation device demonstrates a discrete single-mode tuning range of approximately 12 nm between 1551nm and 1563 nm with a side-mode suppression ratio ≥30 dB. Moreover, the integrated modulator section is shown to support transmission at 10 Gb/s using non-return to zero on-off keying with an extinction ratio in excess of 8 dB. Furthermore, using a time-resolved chirp measurement technique to examine dynamic deviations in the set carrier frequency, the modulator section exhibits a chirp contribution of <6 GHz using test patterns with high and low frequency content. In addition, the generation of optical bursts through the application of a gating function to the SOA section was found to shift the unmodulated carrier of a typical lasing mode by ≤8 GHz for gating periods comparable with a typical PON burst durations of 125 μs which are faster than the thermal response time of the transmitter material.
关键词： Optical communications,tunable semiconductor lasers,dense wavelength division multiplexing,passive optical networks,time division multiplexing,monolithic integration
更新于2025-09-23 15:21:01
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Fabrication of a CMOS-based Imaging Chip with Monolithically Integrated RGB and NIR Filters
摘要： Recent developments in multispectral cameras have demonstrated how compact and low-cost spectral sensors can be made by monolithically integrating filters on top of commercially available image sensors. In this paper, the fabrication of a RGB + NIR variation to such a single-chip imaging system is described, including the integration of a metallic shield to minimize crosstalk, and two interference filters: a NIR blocking filter, and a NIR bandpass filter. This is then combined with standard polymer based RGB colour filters. Fabrication of this chip is done in imec's 200 mm cleanroom using standard CMOS technology, except for the addition of RGB colour filters and microlenses, which is outsourced.
关键词： multispectral imaging,RGB,NIR,CMOS image sensor,monolithic integration,optical filters
更新于2025-09-19 17:15:36
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Semitransparent Energya??Storing Functional Photovoltaics Monolithically Integrated with Electrochromic Supercapacitors
摘要： Energy-storing functional photovoltaics, which can simultaneously harvest and store solar energy, are proposed as promising next-generation multifunction energy systems. For the extension of conventional organic photovoltaics (OPVs), electrochromic supercapacitors (ECSs) are monolithically integrated with semitransparent (ST) quaternary blend-based OPVs (ST Q-OPVs) to achieve compact, energy-efficient storage with great aesthetic appeal. In particular, ST Q-OPVs with low-power-consumption ECSs allow full operation, even under low-intensity irradiance, including artificial indoor light circumstances, and thereby exhibit potential for all-day operating energy suppliers. The prepared ST energy-storing functional photovoltaics also serve as a backup power source for external electronic equipment (e.g., light-emitting diodes, and sensor nodes for Internet of Things) by consuming charged power. In addition to features that include unrestricted operation under any circumstances, color tunability, feasibility of designs with various shapes, rapid charging/discharging, and real-time indication of stored energy levels, ST energy-storing functional photovoltaics could potentially be applied in electronic devices such as advanced smart windows or portable smart electronics.
关键词： semitransparent organic photovoltaics,electrochromic supercapacitors,energy-storing functional photovoltaics,monolithic integration
更新于2025-09-19 17:13:59
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[Semiconductors and Semimetals] Future Directions in Silicon Photonics Volume 101 || Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications
摘要： Si-photonics is based on the mature process technology developed over decades for the realization of ever more complex complementary metal oxide semiconductor (CMOS) integrated circuits on Si (001) exact wafer orientations. One of the key components for full scale functionality of Si-photonics circuitry is the integrated laser emitter, as also exemplified in this volume of “Semiconductors and Semimetals,” where the present status of development of various concepts for both hybrid as well as monolithic integrated laser sources on CMOS-compatible Si (001)-substrate are presented and discussed. These concepts for laser integration can be categorized into three main areas: (i) hybrid integration concepts by laser die or wafer bonding (see also volume 99 of this series, chapters “Quantum dot lasers for silicon photonics” by Arakawa et al.; “Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration” by Sun and Lourdudoss; “Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications” by Volz et al.; “Growth of III-V semiconductors and lasers on silicon substrates by MOCVD” by Shi and Lau), (ii) heteroepitaxial deposition of lattice-mismatched, standard III/V-semiconductor laser stacks (see also volume 99 of this series chapters “Building blocks of silicon photonics” by Vivien et al.; “Heterogeneously integrated III–V photonic devices on Si” by Matsuo), and (iii) lattice-matched epitaxial growth of Ga(NAsP)-based laser on CMOS-compatible Si (001) in this chapter.
关键词： Ga(NAsP),CMOS,monolithic integration,laser integration,Si-photonics
更新于2025-09-16 10:30:52
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Widely Tunable Electro-Absorption Modulated V-Cavity Laser
摘要： We report a widely tunable V-cavity laser monolithically integrated with an electro-absorption modulator (EAM). The device shows a 41-nm wavelength tunability covering 51 channels at 100GHz spacing on the ITU grid, with a side-mode suppression ratio (SMSR) higher than 47 dB. Error-free transmission over 50 km standard single-mode fiber at 10 Gb/s is demonstrated at all wavelengths over the tuning range. The integrated EAM exhibits a dynamic extinction ratio higher than 12.5 dB. The bit-error-rate measurements show a power penalty less than 3 dB for 50-km transmission. The results demonstrate that this ultra-compact and regrowth-free electro-absorption modulated tunable laser can be a cost-effective transmitter solution for DWDM metropolitan and access networks.
关键词： monolithic integration,Tunable V-cavity laser,electro-absorption modulated laser
更新于2025-09-16 10:30:52
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Overview on Monolithically Integrated Arrays of Microtubular Vertical Resonators on Photonic Waveguides for Optofluidic Applications
摘要： A novel platform for optofluidic applications is realized by monolithic integration of an array of ultra-compact three-dimensional (3D) vertically rolled-up microtube ring resonators (VRU-MRRs) with polymer waveguides. The on-chip integrated system is realized by rolling up 2D differentially strained TiO2 nanomembranes into 3D microtubular cavities on a nanophotonic chip. Whispering-gallery modes are observed in the telecom wavelength range, and their spectral peak positions shift significantly when measurements are performed while immersing the tubes or filling their hollow cores with water. The achievement of this work opens up fascinating opportunities to realize massively parallel optofluidic microsystems with exceptional multi-functionality for analysis of biomaterials in lab-in-a-tube systems on a single chip.
关键词： monolithic integration,optofluidic,array of ultra-compact optical sensors,vertically rolled-up microtube ring resonators,3D microcavities
更新于2025-09-16 10:30:52
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Monolithic integration of deep ultraviolet LED with a multiplicative photoelectric converter
摘要： Vertically monolithic integration of multiple devices on a single chip has emerged as a promising approach to overcome the fundamental limits of material and physical properties, providing unique opportunities to harness their complementary physics through integrated solutions to significantly enhance device performance. Herein, we demonstrate a deep ultraviolet light emitting diode (DUV LED) integrated with a multiplicative photoelectric converter (MPC) that is composed of p-GaN/intrinsic GaN/n-GaN (p-i-n GaN) structure to induce the electric-optic conversion, thus considerably improve the hole injection efficiency. This p-i-n GaN structure acts as hole-multiplier via firstly DUV light absorption and then electron-hole pair generation. The newly generated electron-hole pairs are firstly separated by the electric field in the p-i-n GaN structure so that multiple holes are driven into multiple quantum wells (MQWs), and finally contribute to the radiative recombination, thus achieving a high wall plug efficiency (WPE) of 21.6%, which exhibits a 60-fold WPE enhancement compared to the conventional DUV LEDs. The monolithic integration strategy demonstrated here sheds light on developing highly efficient light emitters.
关键词： AlGaN,Multiplicative photoelectric converter,Monolithic integration,DUV LED,injection efficiency
更新于2025-09-16 10:30:52
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Monolithic integration of VCSEL and coupled cavity RCEPD for short-reach single-fiber bi-directional optical interconnects
摘要： In this paper, we propose a monolithic integration of vertical-cavity surface-emitting laser (VCSEL) and coupled cavity resonant cavity enhancement photodiode (ccRCEPD). Based on this structure, a couple of matched chips is designed for single fiber bidirectional optical interconnects. That type of integration can easily put VCSEL and (photodiode) PD into one package, which not only reduces the costs of the device packages and even cut the costs of the optical system like beam splitter, but also can save the space in optical transceiver to make it tight. These chips’ VCSELs show a threshold current of 1.6 mA and 1.7 mA, and a slope efficiency of 0.74 W/A and 0.97 W/A. VCSELs’ modulation bandwidth is 9.5 GHz and 11.0 GHz, and PDs’ response bandwidth is 10 GHz. Furthermore, the modulation bandwidth can be higher if the material of the multiple quantum wells (MQWs) is transformed GaAs/AlGaAs to InGaAs/AlGaAs. And by optimizing, the 3dB bandwidth of PD will be higher.
关键词： ccRCEPD,bidirectional optical interconnects,VCSEL,monolithic integration,quantum wells
更新于2025-09-12 10:27:22