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Determination of physical mechanism responsible for the capacitance-voltage weak inversion “hump” phenomenon in n-InGaAs based metal-oxide-semiconductor gate stacks
摘要： Weak inversion capacitance-voltage (C-V) “hump” is a widely observed phenomenon at n-InGaAs based metal oxide semiconductor (MOS) structures. The mechanism responsible for this phenomenon is still under discussion. The C-V hump can be explained as an interaction of interface states with either one or both semiconductor energy bands. Each of the proposed mechanisms leads to a different interpretation of C-V hump. Simulating the mechanisms by relevant equivalent circuits, the capacitance and conductance characteristics of the MOS structure were calculated and compared with experimental results. The mechanism responsible for the C-V hump was determined.
关键词： interface states,equivalent circuits,n-InGaAs,metal-oxide-semiconductor,capacitance-voltage hump
更新于2025-11-14 17:28:48
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Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
摘要： In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold voltages are of (cid:1)0.97 (t0.6) V and (cid:1)1.22 (t0.31) V in air and at hydrogen concentration of 9800 ppm, respectively, for the depletion (enhancement)-mode device. In addition, by employing the co-integrated FETs the transfer characteristics of the direct-coupled FET logic (DCFL) obviously vary under hydrogen ambience. The VOH value reduces and the VOL value increases in the DCFL with the measurement of hydrogen detection.
关键词： Threshold voltage,Hydrogen sense,Doping-channel field-effect transistor,Enhancement/depletion-mode,AlGaInP/InGaAs,Direct-coupled FET logic
更新于2025-09-23 15:22:29
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[IEEE 2018 3rd International Conference On Internet of Things: Smart Innovation and Usages (IoT-SIU) - Bhimtal, India (2018.2.23-2018.2.24)] 2018 3rd International Conference On Internet of Things: Smart Innovation and Usages (IoT-SIU) - A 100 V Lateral Trench Power MOSFET on InGaAs/InP
摘要： In this paper, we present a lateral-trench metal-oxide-semiconductor field-effect transistor (LT-MOSFET) on high mobility InGaAs material. The proposed LT-MOSFET emerged with trench technology consist a gate electrode placed vertically in a trench on the left end of the p-body region. The trench in the drift region introduce a RESURF effect to reduces the electric field and improves the device breakdown voltage. By 2-D numerical simulation, LT-MOSFET exhibits 2.4 times improvement on breakdown voltage with 3.3 times high figure-of-merit in comparison with the conventional-lateral MOSFET (CLMOSFET) for identical cell pitch and gate length.
关键词： figure of merit,breakdown voltage,lateral-trench,InGaAs
更新于2025-09-23 15:21:21
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[IEEE 2018 3rd International Conference On Internet of Things: Smart Innovation and Usages (IoT-SIU) - Bhimtal, India (2018.2.23-2018.2.24)] 2018 3rd International Conference On Internet of Things: Smart Innovation and Usages (IoT-SIU) - A 50 V Multi-Gate RF LMOS on InGaAs
摘要： In this paper, we present a 50 V RF power multi-gate LMOS (MG-LMOS) structure on InGaAs with p-type InP substrate. The proposed structure contains three n+-polysilicon gate electrodes placed in a trench and n+ InGaAs layer at bottom of epitaxial layer which act as a drain connected to the vertically extended drain contact at both ends of the device. The MG-LMOS generate parallel current flow through multi-channels in p-base from drain to source. The proposed structure enhances the drain current (ID ) which provide reduction in specific on-resistance (Ron,sp) with increase in transconductance (gm ) leads to provide improvement in cut-off frequency (fT ) and maximum oscillation frequency (fmax ). The MG-LMOS designed for Vbr of 50 V by using 2-D simulations, provides 3.9 times high ID , 5.4 times reduces the Ron,sp , 5.9 times development in gm , 2.1 times increment in fT , and 2.5 times improvement in fmax in comparison with conventional planer LMOS (CP-LMOS) for the equivalent cell pitch.
关键词： multi-channels,LMOS,Transconductance,Cut-off frequency,InGaAs
更新于2025-09-23 15:21:21
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Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters
摘要： The current–voltage characteristics of InxGa1 – xAs/GaAs metamorphic photovoltaic converters with built-in n-InGaAs/InAlAs Bragg reflectors are studied at an indium content of x = 0.025–0.24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K. It is found that a sharp rise in the resistance of silicon-doped reflectors with an increasing fraction of In is due to weak activation of the donor impurity in InAlAs–n:Si layers. As a result, the energy barriers for majority carriers are formed in the latter, with a height of 0.32–0.36 eV and a substantial width. To suppress this effect, the technology of the Te doping of n-InGaAs/InAlAs Bragg reflectors is developed, which reduces the series resistance by five orders of magnitude. This makes it possible to keep the fill factor of the current–voltage characteristic above 80% up to current densities of 2 A/cm2. Values exceeding 85%, achieved for the quantum efficiency, indicate that the “memory” and tellurium segregation effects characteristic of this kind of impurity are suppressed.
关键词： InAlAs,resistive loss,doping,Bragg reflector,photovoltaic converter,heterointerface,InGaAs
更新于2025-09-23 15:21:01
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Hydrogen Sensing Characteristics of AlGaInP/InGaAs Complementary Co-Integrated Pseudomorphic Doping-Channel Field-Effect Transistors
摘要： In this article, the hydrogen sensing device and logic characteristics of the Al0.25Ga0.25In0.5P/In0.1Ga0.9As complementary co-integrated pseudomorphic doping-channel ?eld-effect transistors are demonstrated. Due to the existence of a relatively large conduction (valence) band discontinuity at Al0.25Ga0.25In0.5P/In0.1Ga0.9As heterojunction and the employment of a small energy-gap In0.1Ga0.9As channel layer, it could provide a high gate barrier height to avoid electrons (holes) injection form channel into gate region in the studied n-channel (p-channel) device. With respect to the n-channel (p-channel) transistor under hydrogen ambient, hydrogen molecules are adsorbed and dissociated on the Pd catalytic metal surface, followed by rapid diffusion of hydrogen atoms into the MS interface where the dipoles are formed to lower (elevate) the gate barrier height and enhance (decrease) the drain current. In the n-channel (p-channel) device, the threshold voltages at drain current of 0.1 mA/mm are of 0.67 (0.05) and 0.38 (?0.26) V in air and at hydrogen concentration of 9800 ppm, respectively. As hydrogen is detected, the characteristics of inverters shift left obviously, and the VOH and VIH values are decreased.
关键词： field-effect transistors,hydrogen sensing,AlGaInP/InGaAs,logic characteristics
更新于2025-09-23 15:21:01
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A Si-based InP/InGaAs nanowire array photodetector operating at telecommunication wavelength
摘要： A Si-based vertical nanowire heterostructure array photodetector is designed and studied by a coupled three-dimensional optoelectronic simulation. Each nanowire is composed of an InP/In0.53Ga0.47As/InP axial p-i-n junction, which is designed to operate at telecommunication wavelengths. The results show that the absorption of the nanowire array strongly depends on the D/P ratio and nanowire diameter. By tuning the D/P ratio and diameter simultaneously, the peak absorption wavelength could be fixed at 1550 nm. Due to the light-trapping and light-concentrating properties, the nanowire array photodetector exhibits a remarkable responsivity beyond 0.8 A/W, several times higher than its thin film counterpart with the equivalent thickness. This work suggests that the III-V nanowire array is promising for high-performance Si-based photodetectors applied in optical telecommunication systems.
关键词： Nanowire array,Light-trapping,Optical communication,Si-based,InGaAs/InP
更新于2025-09-23 15:21:01
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Scalable Compact Modeling of III-V DHBTs: Prospective Figures of Merit Toward Terahertz Operation
摘要： We investigate the bias, temperature, and frequency dependence of two III–V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes, using a HiCuM/L2 compact model-based multigeometry scalable parameter extraction methodology. Very good agreement between the model simulations and experimental data is demonstrated. Transistor currents and junction capacitances show very good scaling, thereby allowing the separation of intrinsic and peripheral effects. Prediction of future III–V HBT technologies figures-of-merit is performed by using the generated scalable model card.
关键词： InGaAs/InP DHBTs,heterojunction bipolar transistors,Compact model,GaAsSb/InP DHBTs
更新于2025-09-23 15:21:01
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Investigation of modulation transfer function in InGaAs photodetector small pitch array based on three-dimensional numerical analysis
摘要： Three-dimensional numerical simulation technology was used to investigate the influence of structural and material parameters on the modulation transfer function (MTF) of lattice matched InGaAs/InP planar small pitch arrays. We found that extending depletion zone through increasing depth of diffusion junction and reducing the doping concentration in the absorption layer plays a critical role in optimizing the MTF of arrays. And it is highly worth noting that the very optimization effects become even more pronounced in smaller pitch arrays, which offers valuable references to restrain crosstalk in highly dense array and strengthen the imaging ability of large format photodetector system in future. However, the inevitable cost of deteriorating the specific detectivity should not be ignored. And hence, junction depth and doping concentration of the absorption layer need to be balanced in actual preparation. In addition, the effects of lattice temperature on MTF and crosstalk in arrays were also discussed. The inter-pixel crosstalk deteriorates seriously as rising lattice temperature. A stronger impact of lattice temperature on MTF of larger pitch arrays has been confirmed. This work offers important reference to suppress inter-pixel crosstalk in obtaining the high-resolution imaging for InGaAs photodetector focal plane array.
关键词： InGaAs photodetector array,Three-dimensional numerical analysis,Modulation transfer function,Crosstalk
更新于2025-09-23 15:19:57
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Exploiting intervalley scattering to harness hot carriers in IIIa??V solar cells
摘要： Hot carrier solar cells offer the potential to exceed the Shockley–Queisser limit. So far, however, there has been no clear route to achieve this result. Recently, the exploitation of the satellite valleys of the solar absorber material has been proposed as a feasible approach to harness hot carriers. Here, we show that, upon photoinduced and field-aided intervalley scattering to upper L-valleys, hot carriers can be harnessed in InGaAs/AlInAs heterojunctions at voltages defined by the upper valley (~1.25 V in the ideal case) rather than the bandgap of the InGaAs absorber (0.75 eV) under practical operational conditions. The efficiency of the present system does not exceed the single bandgap limit due to a mismatch in the valley degeneracy across the n+-AlInAs/n-InGaAs interface. However, we suggest that this is not a fundamental limitation to the realization of a hot carrier solar cell.
关键词： InGaAs/AlInAs heterojunctions,hot carrier solar cells,intervalley scattering,valley photovoltaic,Shockley–Queisser limit
更新于2025-09-23 15:19:57