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[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia) - Niigata, Japan (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - Modeling and model parameter extraction of wide bandgap power semiconductor device, package, and circuit for simulating fast switching behavior
摘要： Wide band gap power semiconductor devices have superiority in fast switching operation, when compared to Si IGBT and PiN diodes for voltage range from several hundred to several kilo volts. The fast switching operation gives high di/dt and dv/dt, which results in inducing surge voltage and EMI noise for poorly designed circuit. The precise dynamical model of power device and peripheral component is necessary in estimating these transient phenomenon. This paper presents the dynamical model of wide bandgap power semiconductor devices, package of power device, and circuit wiring. The fixture configurations to extract model parameter is also presented. The static blocking and conducting condition for power device is characterized with curve tracer. The terminal capacitance of power device dominates switching dynamic terminal characteristics. Then, voltage dependency of capacitances are characterized with the developed fixture, which can cope with normally on transistor characterization. The electro magnetic analysis of package and circuit to identify parasitic component is also addressed in the paper. The switching behaviors of power device and the phenomenon in the circuit are discussed based on the model and extracted model parameters.
关键词： parameter extraction,wide bandgap power semiconductor devices,modeling,fast switching behavior,simulation
更新于2025-09-10 09:29:36
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A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model
摘要： A new direct extraction method to determine the parasitic capacitances for HBTs is presented in this paper. The main advantage is that base parasitic capacitance Cpb can be extracted by using three di?erent size HBTs with the same pad pro?le. This method is based on an improved small-signal model, which takes into account the distribution e?ects of the base and collector feedlines. Good agreement is obtained between the measured and modeled results for the 1 × 3 × 12 μm2, 2 × 2 × 20 μm2 and 1 × 3 × 40 μm2 (number of emitter ?ngers × emitter width × emitter length) GaAs HBTs up to 40 GHz.
关键词： Scalable model,HBT,Parameter extraction,Small signal model,Equivalent circuits
更新于2025-09-09 09:28:46