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- 实验方案
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Electric and dielectric characteristics of Al/ZrO2/IL/n-Si MOS capacitors using three-frequency correction method
摘要： In this study, MOS capacitors of Al/ZrO2/IL/n-Si (IL: interface layer) have been fabricated. Bias scan and frequency scan data of measured parallel capacitance (Cm) and parallel resistance (Rm) have been taken in the frequency of ～1 kHz to 2 MHz. To correct external frequency dispersion of parasitic parameters, we have used five-element model (including MOS capacitance C, parallel resistance Rp, IL capacitance Ci, IL resistance Ri, and series resistance Rs) and three-frequency correction method. Extracted capacitance C by the three-frequency correction method has negligible frequency dependence from 0.38 nF to 0.34 nF in the average frequency of ～3.7 kHz to 1.54 MHz. The frequency dispersion of Rp, Ci, Ri, and Rs are explained by some physical mechanisms. Small relative errors ΔC/C, ΔRp/Rp, ΔCi/Ci, ΔRi/Ri and ΔRs/Rs are less than 0.2%, 2%, 3%, 1.2% and 0.4% respectively. We have also used two existing double-frequency methods of three- and four-element models for comparison, and the extracted capacitances show abnormal frequency dependence. Above results indicate the three-frequency method of five-element model is necessary, effective and convenient in providing sufficient list data for bias voltage dependence or frequency dependence. The dielectric parameters, such as relative dielectric constant, conductivity, imaginary part of complex dielectric constant, and dielectric loss tangent have been calculated. The mechanisms of frequency dispersion for the dielectric parameters have been analyzed.
关键词： Three-frequency correction,Parameter extraction,MOS capacitor,Five-element model,Dielectric characteristics,Frequency dispersion
更新于2025-11-14 17:28:48
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A reliable and efficient small-signal parameter extraction method for GaN HEMTs
摘要： In this paper, a reliable and efficient parameter extraction method for GaN high electron mobility transistor (HEMT) small‐signal models has been proposed. By utilizing parameter scanning method, the initial values of the extrinsic elements are first extracted from the cold pinch‐off and cold unbiased measurement conditions, respectively. An iterative optimization algorithm is employed then to optimize the extrinsic elements. This scanning and iteration combined algorithm based on a direct extraction method of extrinsic elements can reduce the impact of the approximation error, which makes the determined values of the small‐signal parameters more reliable. The extraction flow has been realized in a Matlab program for efficiency. A 16‐element small‐signal equivalent circuit model (SSECM) for GaN HEMTs has been employed, and the new parameter extraction method has been validated by comparing the simulated small‐signal S‐parameters with the measured data from 0.1 GHz to 40 GHz for two different device dimensions.
关键词： small‐signal modeling,parameter extraction,GaN high electron mobility transistor (HEMT)
更新于2025-09-23 15:23:52
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Distributed Small-signal Equivalent Circuit Model and Parameter Extraction for SiGe HBT
摘要： In this paper, we present an improved high frequency small-signal distributed model for SiGe HBTs under forward-active mode based on the transmission line theory. The distributed nature of the transistor structure is taken into account in the proposed model. The single SiGe HBT is considered to be a cascade of many infinitesimal transistors, connected with the intrinsic base resistance. The closed-form solutions of admittance parameters for the distributed model are derived by solving the transmission line equation. With reasonable approximation and simplification, the model parameters are then directly extracted based on the nonlinear rational function fitting. The new improved distributed model and parameter extraction technique are validated with a 1×1.2×30 μm2 SiGe HBT from 100 MHz to 20.89 GHz. The simulated S-parameters in the proposed transmission line model are in close agreement with the measured data, and the frequency characteristics of the transistors are well predicted.
关键词： parameter extraction,rational function fitting,transmission line,SiGe HBT,Device modeling,small-signal model
更新于2025-09-23 15:23:52
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Determining Series Resistance for Equivalent Circuit Models of a PV Module
摘要： Literature describes various methods for determining a series resistance for a photovoltaic device from measured IV curves. We investigate use of these techniques to estimate the series resistance parameter for a single diode equivalent circuit model. With simulated IV curves we demonstrate that the series resistance values obtained by these techniques differ systematically from the known series resistance parameter values used to generate the curves, indicating that these methods are not suitable for determining the series resistance parameter for the single diode model equation. We present an alternative method to determine the series resistance parameter jointly with the other parameters for the single diode model equation, and demonstrate the accuracy and reliability of this technique in the presence of measurement errors.
关键词： Current-voltage characteristics,parameter extraction,electric resistance,solar panels
更新于2025-09-23 15:22:29
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[Springer Theses] Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors || Fabrication, Characterization and Parameter?Extraction of InAs Nanowire-Based Device
摘要： Nanofabrication, low noise electrical measurement and various nanoscale characterization methods are frequently used in the study. This chapter will give as introduction on the growth method, fabrication techniques, characterization methods of materials and devices, measurement systems, and way to extract the electrical parameters of InAs nanowires FET devices.
关键词： Parameter extraction,Fabrication of nanowire devices,Electrical measurement,Structural characterization
更新于2025-09-23 15:21:21
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[IEEE 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Brasov, Romania (2019.11.3-2019.11.6)] 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Estimation of Photovoltaic Panel Parameters by a Numerical Heuristic Searching Algorithm
摘要： This work uses the Nelder-Mead approach, which is a direct search optimization method, to obtain the accurate photovoltaic parameters by minimizing a predetermined objective function of five variables. This paper presents some new modifications made to the Nelder-Mead algorithm which allow a better convergence of the method. A comparison study has conducted between this proposed technique and a classical Nelder-Mead algorithm towards the additive noise of the current along with a sensitivity analysis towards the resolution of ADC.
关键词： parameter extraction,Photovoltaic panel,Nelder-Mead algorithm
更新于2025-09-23 15:21:01
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Modeling and parameters extraction of photovoltaic cell and modules using the genetic algorithms with lambert W-function as objective function
摘要： In this paper, a method based on genetic algorithms is proposed for improving the accuracy of solar cell parameters extracted using novel technique. We propose a computational based binary-coded genetic algorithm (GA) to extract the parameters (I0, Iph, n, Rs and Rsh) for a single diode model of solar cell from its current-voltage (I–V) characteristic. The algorithm was implemented using Matlab as a programming tool and validated by applying it to the I–V curve synthesized from the literature using reported values. The characterization, current-voltage data used was generated by simulating a one-diode solar cell model of speci?ed parameters. The new approach is based on formulating I–V equation of solar cell, with Lambert function, the parameter extraction as a search and optimization problem. Compared with other optimization techniques in literatures, the approach proposed for the determination of parameters are in good agreement.
关键词： Photovoltaic solar cell,genetic algorithm,optimization,parameter extraction,Lambert function
更新于2025-09-23 15:21:01
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Equivalent Circuit Parameters of Hybrid Quantum-Dot Solar Cells
摘要： We experimentally investigate the equivalent circuit parameters of hybrid quantum-dot (QD) solar cells consisted of InAs/GaAs and GaSb/GaAs QDs. The hybrid QD solar cell samples are fabricated by stacking one pair and three pairs of InAs/GaAs and GaSb/GaAs QD layers. Four equivalent circuit models are applied to fit the experimentally obtained current-voltage characteristics of the investigated samples. The relevant circuit parameters are photocurrent, reverse saturation current, diode ideality factor, series resistance, and shunt resistance. The best fitted model of all samples contains both series and shunt resistances. According to the fitting result, the diode ideality factor of 2, which indicates the dominant recombination current, is always obtained. Comparing the extracted parameters from two single-pair hybrid QD solar cells, the effects of structural stacking sequence can be discussed in term of light absorption and carrier storage properties. We have found that an increase of stacking number from one pair to three pairs deteriorates the solar cell performance. This might be caused by an excessive total QD layer thickness or a presence of dislocation defects in that sample.
关键词： Parameter Extraction,Current-Voltage Characteristics,Solar Cell,Quantum Dot
更新于2025-09-23 15:19:57
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[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - In-Situ Transmission Electron Microscopy Coupled with Resonant Microcantilever for Comprehensive Evaluating Sulfurization Performance of Zinc Oxide Nanowires
摘要： This paper reports a new technique with in-situ transmission electron microscopy (in-situ TEM) and resonant microcantilever to comprehensively evaluate sulfurization performance of ZnO nanowires. Herein, in-situ TEM is used to real-time observe the sulfurization process of ZnO nanowires under SO2-contained atmosphere. temperature-varying micro-gravimetric method, thermodynamic interaction between ZnO nanowires and SO2 molecules is quantitatively evaluated by resonant microcantilever. By exposing the ZnO nanowires sample to SO2-contained atmosphere, a thick shell layer of ZnSO3 can be formed onto the surface of ZnO nanowires and a novel core-shell nanowire structure of ZnO@ZnSO3 is obtained finally. According to our comprehensive evaluation results, the ZnO nanowires sample with 100 nm diameter exhibits high reactive to SO2 molecules and is suitable for SO2 capture and storage.
关键词： sulfurization process,ZnO nanowires,thermodynamic parameter extraction,In-situ TEM
更新于2025-09-23 15:19:57
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Comparative study on parameter extraction of photovoltaic models via differential evolution
摘要： Parameter extraction of photovoltaic (PV) models, which remains a multi-variable, nonlinear, and multi-modal problem, has recently gained considerable attention in the simulation and calculation of solar PV systems. Among various parameter extraction techniques, differential evolution (DE) and its variants are envisaged to be pretty effective for parameter extraction of PV models. In this paper, 11 state-of-the-art DE algorithms are comprehensively compared to extract the parameters of different PV models. The performance of each algorithm is evaluated based on the accuracy of solution, convergence speed, and the robustness. Based on the experimental results and analysis of different DE algorithms, the useful insights are concluded, which can guide the improvement of designing more efficient alternative DE methods for solving the PV parameter extraction problems.
关键词： Comparative study,Parameter extraction,Differential evolution,Photovoltaic models
更新于2025-09-19 17:13:59