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[IEEE 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Waikoloa Village, HI, USA (2018.6.10-2018.6.15)] 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Plasma Texturing of Silicon Wafers and Finished Solar Cell for Mass Production
摘要： Standard plasma texturing of silicon wafers are not widely introduced within mass production due to several challenges which have to be overcome before implementation i.e. surface contamination, surface near damaging due to ion bombardment, and surface passivation. Within this contribution we will show our current status to overcome these challenges. We will present that the electrical and optical properties of ICP only plasma textured samples are sufficient for solar cell production. Since in ICP processes the ion bombardment is low we also will discuss our current understanding of the plasma process based on experimental results of the self-masking process. Furthermore, a new plasma texturing approach texturing the SiN layer of finished solar cells is introduced for the first time which overcome all problems introduced by the plasma texturing of bare solar wafers.
关键词： Plasma materials processing,silicon,SiN texturing,Plasma texturing,photovoltaic cells
更新于2025-10-22 19:40:53
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Bandgap engineering of cobalt-doped bismuth ferrite nanoparticles for photovoltaic applications
摘要： The bandgap energy range of multiferroic bismuth ferrite is 2.2–2.7 eV, making it a promising candidate for photovoltaic (PV) applications. But its ef?ciency is still very low (<2%). This report thus focusses on the application of bismuth ferrite (BFO) engineered with cobalt (Co) doping and on the tuning of its bandgap energy (Eg). BiFeO3 is a unique multiferroic material that simultaneously displays both ferromagnetic and ferroelectric properties at room temperature. Co doped with pure BiFeO3 (BiFe(1?x)Cox O3; x = 0, 0.05, 0.1 and 0.15) was synthesized by the sol–gel method and annealed at 600?C. X-ray diffraction shows the well-arranged crystalline structure and peaks of pure and doped-BiFeO3 nanoparticles. A suitable reduction of Eg has been observed for Co-doped BiFeO3, which may be appropriate for the effective use in PV solar cells. Thermogravimetric analysis and differential scanning calorimetry were used to investigate the thermal decomposition character of the xerogel powder and the pattern of pure and doped BiFeO3 phases. Field emission scanning electron microscopy images show the surface crystallography of pure and Co-doped BiFeO3. Co-doped BiFeO3 has considerably reduced the crystallite and particle size of the samples. We have calculated the Eg of pure and doped BiFeO3 using a UV–Vis–NIR spectrophotometer and the results show the important reduction of Eg (1.60 eV) of the Co-doped samples, which may have potential applications in PV solar cells.
关键词： sol–gel,photovoltaic cells,Bandgap,nanoparticles,multiferroic
更新于2025-10-22 19:40:53
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se <sub/>2</sub> Solar Cells
摘要： We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.
关键词： ACIGS,positron annihilation,defects,potassium,vacancies,reactive sputtering,photovoltaic cells
更新于2025-09-23 15:21:01
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Single-Junction Organic Photovoltaic Cells with Approaching 18% Efficiency
摘要： Optimizing the molecular structures of organic photovoltaic (OPV) materials is one of the most effective methods to boost power conversion efficiencies (PCEs). For an excellent molecular system with a certain conjugated skeleton, fine tuning the alky chains is of considerable significance to fully explore its photovoltaic potential. In this work, the optimization of alkyl chains is performed on a chlorinated nonfullerene acceptor (NFA) named BTP-4Cl-BO (a Y6 derivative) and very impressive photovoltaic parameters in OPV cells are obtained. To get more ordered intermolecular packing, the n-undecyl is shortened at the edge of BTP-eC11 to n-nonyl and n-heptyl. As a result, the NFAs of BTP-eC9 and BTP-eC7 are synthesized. The BTP-eC7 shows relatively poor solubility and thus limits its application in device fabrication. Fortunately, the BTP-eC9 possesses good solubility and, at the same time, enhanced electron transport property than BTP-eC11. Significantly, due to the simultaneously enhanced short-circuit current density and fill factor, the BTP-eC9-based single-junction OPV cells record a maximum PCE of 17.8% and get a certified value of 17.3%. These results demonstrate that minimizing the alkyl chains to get suitable solubility and enhanced intermolecular packing has a great potential in further improving its photovoltaic performance.
关键词： nonfullerene acceptors,organic photovoltaic cells,molecular modification,power conversion efficiency
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - The Influence of Al <sub/>2</sub> O <sub/>3</sub> Passivation of III-V on Ge Multijunction Solar Cells to the Spatial Distribution of Luminescent Coupling Effect
摘要： The nonuniformity of luminescent coupling (LC) effect in III-V based multijunction solar cells (MJSCs) is partly ascribed to recombination at perimeter defects. An attempt to solve this was done by sidewall passivation of InGaP/GaAs/Ge triple junction solar cells through atomic layer deposition of thin Al2O3. Results revealed that sidewall passivation of a complete MJSC can increase LC current collection in a limiting GaAs middle cell by 21.9% and enhance its uniformity by 7.2%; hence, demonstrating a non-invasive way to improve current matching among subcells.
关键词： photovoltaic cells,luminescence coupling,current mapping,atomic layer deposition,laser beam-induced passivation
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Toward >25% Efficient Monolithic Epitaxial GaAsP/Si Tandem Solar Cells
摘要： We report here on progress made in the development of >20% efficient monolithic epitaxial III-V/Si tandem solar cells. Following our prior demonstration of a GaAs0.75P0.25/Si tandem cell with verified AM1.5G efficiency of 20.1%, we have undertaken intensive efforts aimed at optimization of the top and bottom subcells, involving both materials quality improvement and detailed device structure refinement. To date we have thus demonstrated 21.8% AM1.5G GaAs0.75P0.25/Si tandem cells making use of an optimized, but still defect-limited GaAsP top cell combined with a simple diffusion-processed (emitter and back-surface field) Si bottom cell. With recent development of a low dislocation density III-V-on-Si epitaxial materials platform, as well as bottom cell enhancements for photon management, analytical performance loss analysis and efficiency projections indicate that >25% is achievable in the near-term, and 30% within reach with additional holistic optimization.
关键词： photovoltaic cells,Si,III-V semiconductor materials,semiconductor epitaxial layers
更新于2025-09-23 15:21:01
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Photogenerated-Carrier Separation and Transfer in Two-Dimensional Janus Transition Metal Dichalcogenides and Graphene van der Waals Sandwich Heterojunction Photovoltaic Cells
摘要： Two-dimensional (2D) Janus transition metal dichalcogenides (JTMDs) show direct band gaps and strong visible-light absorption with promising applications in photovoltaic (PV) cells. Here, we investigate the electronic structures and dynamics of photogenerated carriers in 2D JTMDs and graphene van der Waals sandwich heterojunction (G/JTMDs/G) photovoltaic cells by using first-principles calculations. We find that the intrinsic built-in electric field in JTMDs results in an asymmetry potential, which can be used to effectively enhance the separation and transfer of photogenerated carriers from JTMDs to different graphene layers with a preferred direction within hundreds of femtoseconds in the G/JTMDs/G heterostructures. Furthermore, the photogenerated electrons (holes) can transfer from monolayer MoSSe (MoSeTe) to the graphene sheets by the Se side with lower (higher) potential, while the transfer of the photogenerated holes (electrons) is prohibited due to the large separation between donor and acceptor states.
关键词： First-principles calculations,van der Waals heterostructures,Janus transition metal dichalcogenides,Photogenerated carriers,Two-dimensional materials,Graphene,Charge transfer,Photovoltaic cells
更新于2025-09-23 15:21:01
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Residual stress analysis of thin film photovoltaic cells subjected to massive micro-particle impact
摘要： Residual stresses play a crucial role in both light-electricity conversion performances and the lifespan of photovoltaic (PV) cells. In this paper, the residual stress of triple junction cells (i.e. GaInP/GaInAs/Ge) induced by laser-driven massive micro-particle impact is analyzed with a novel method based on backscattering Raman spectroscopy. The impact process, which induces damage to the PV cells and brings the residual stress, is also investigated by optical microscopy (OM) and Scanning Electron Microscopy (SEM). The results show that the PV cells would exhibit various damage patterns. At the same time, strong residual stresses up to hundreds of MPa introduced in the damaged PV cells after impact have been analysis, providing an effective perspective to better understand the damage behavior and residual stress features of PV cells during their service life.
关键词： Damage behavior,Residual stress,Photovoltaic cells,Micro-particle impact,Raman spectroscopy
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Simulation of Optical and Electrical Losses of PV Modules in Moderate and Desert Conditions
摘要： Measurements of the PV modules are based on standard test conditions. However, PV modules have significant difference in performance based on the locations, environmental conditions and mounting situation. One of the environmental factors which influence the performance of the PV module is the spectrum of incident light on the PV module. In this paper, we compare the optical reflection losses, thermal losses as well as electricity production of modules under moderate (AM1.5) and desert-like spectrums (AM1.0). The results show quantitatively that thermalization has the highest loss portion with an average of 29.5% of the total incoming power density for both spectrums. The highest relative change is for absorption of light in polymer encapsulant especially between 280-400 nm with 24.3% and total resistive losses (in cell and interconnection) with 21.3% extra losses from desert to moderate conditions. Finally, we show that similar modules in desert climate produce 5% extra power gain while it suffers from 7.2% extra heat and 5% extra reflections.
关键词： Photovoltaic cells,Si PV Modelling,Metrology and Characterization,PV,Crystalline Silicon PV
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell
摘要： The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while ?ll factors (FF) are above 80%. At one-sun illumination, reducing one junction’s bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% ef?ciency loss). These results demonstrate the potential of the HBTSC concept to produce high-ef?ciency independently connected double-junction solar cells.
关键词： photovoltaic cells,independent current,multi terminal,gallium indium phosphide,gallium arsenide,double junction
更新于2025-09-23 15:21:01