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One-step synthesis of centimeter-size alpha-MoO3 with single crystallinity
摘要： By utilizing the convenient physical vapor deposition procedure, a simple and low-cost synthesis route is developed to fabricate high-quality orthorhombic MoO3 crystals with single crystallinity and significant size (bigger than 10mm×10 mm2). A combined characterization techniques of atomic force microscopy, X-ray photoelectron spectroscopy, synchrotron-based X-ray diffraction and Raman spectroscopy confirm the high quality of α-MoO3 crystal from the point view of both electronic and physical structures. Compared to previous reports in literature, we demonstrate herein a rather simplified one-step approach with only the MoO3 powder needed. In the end, corresponding electrochromic performance has also been been tested which reveals high transmittance and remarkable optical properties which may broadens the potential applications of MoO3 single crystal in nanosensors, nanoelectronics and so on.
关键词： GIXRD,XPS,single crystallinity,Physical Vapor Deposition,α-MoO3
更新于2025-11-21 11:24:58
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Fabrication and Investigation of Two-Component Film of 2,5-Diphenyloxazole and Octafluoronaphthalene Exhibiting Tunable Blue/Bluish Violet Fluorescence Based on Low Vacuum Physical Vapor Deposition Method
摘要： Organic luminescent materials play an important role in the fields of light-emitting diodes and fluorescent imaging. Moreover, new synthetic approaches towards π-conjugated molecular systems with high fluorescence quantum efficiency are highly desired. Herein, different 2,5-diphenyloxazole-octafluoronaphthalene (DPO-OFN) films with tunable fluorescence have been prepared by Low Vacuum Physical Vapor Deposition (LVPVD) method. DPO-OFN films showed some changed properties, such as molecular vibration and fluorescence. All films exhibited blue/bluish violet fluorescence and showed blueshift, in comparison with pristine DPO. This work introduced a new method to fabricate two-component molecular materials with tunable blue/bluish violet luminescence properties and provided a new perspective to prepare organic luminescent film materials, layer film materials, cocrystal materials, and cocrystal film materials. Importantly, these materials have potential applications in the fields of next generation of photofunctional materials.
关键词： blue/bluish violet luminescence,organic luminescent materials,tunable fluorescence,two-component film,low vacuum physical vapor deposition
更新于2025-09-23 15:22:29
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Tenfold increase in the photostability of an azobenzene guest in vapor-deposited glass mixtures
摘要： Improvements to the photostability of organic glasses for use in electronic applications have generally relied on the modification of the chemical structure. We show here that the photostability of a guest molecule can also be significantly improved—without chemical modification—by using physical vapor deposition to pack molecules more densely. Photoisomerization of the substituted azobenzene, 4,4'-diphenyl azobenzene, was studied in a vapor-deposited glass matrix of celecoxib. We directly measure photoisomerization of trans- to cis-states via Ultraviolet-visible (UV-Vis) spectroscopy and show that the rate of photoisomerization depends upon the substrate temperature used during co-deposition of the glass. Photostability correlates reasonably with the density of the glass, where the optimum glass is about tenfold more photostable than the liquid-cooled glass. Molecular simulations, which mimic photoisomerization, also demonstrate that photoreaction of a guest molecule can be suppressed in vapor-deposited glasses. From the simulations, we estimate that the region that is disrupted by a single photoisomerization event encompasses approximately 5 molecules.
关键词： photostability,organic glasses,azobenzene,photoisomerization,physical vapor deposition,molecular simulations,UV-Vis spectroscopy
更新于2025-09-23 15:21:21
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Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources
摘要： The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were grown using toxic precursor gases. Here we demonstrate the creation of Ge films on Si substrates through physical vapor deposition of toxin-free solid Ge sources. Structural characterization indicates that a high tensile strain is introduced in the Ge film during the deposition process. We attribute the presence of such a tensile strain to the difference in thermal expansion coefficient between Si and Ge. A Ge peak, centered at ~2100 nm, is evident in the photoluminescence spectra of these materials, which might result from direct band gap photoluminescence alone, or from superposition of direct band gap and indirect band gap photoluminescence. These Ge-on-Si materials are therefore promising in light emission applications.
关键词： tensile strain,Si substrates,physical vapor deposition,Ge films,photoluminescence
更新于2025-09-23 15:21:01
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The Influence of Laser Modification on a Composite Substrate and the Resistance of Thin Layers Created Using the PVD Process
摘要： For physical vapor deposition (PVD) technology, cleaning a substrate is one of the key preliminary processes before depositing the metal layer. In this article, we present the results of research on the modification of a textile composite substrate using laser technology and its influence on the surface resistance of silver structures intended for use in wearable electronics. As a result of the substrate modification, the resistance of the layers increased as compared with the structures produced on an unmodified substrate. An experimental planning technique was used to optimize the laser modification process.
关键词： wearable electronics,textronics,design of experiments,physical vapor deposition,laser modification,PVD
更新于2025-09-23 15:19:57
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Interlayer interactions in 2D WS <sub/>2</sub> /MoS <sub/>2</sub> heterostructures monolithically grown by <i>in situ</i> physical vapor deposition
摘要： The understanding of the interlayer interactions in vertical heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is essential to exploit their advanced functions for next-generation optoelectronics and electronics. Here we demonstrate a monolithic stacking of TMDC heterostructures with 2D MoS2 and WS2 layers via in situ physical vapor deposition. We find that the kinetically sputtered atoms are able to overcome the interlayer van der Waals forces between the vertical layers, leading to a substantial number of randomly oriented stacks with various twist angles. Our X-ray photoelectron spectroscopy results reveal a type II heterojunction for 2D WS2/MoS2, showing a band alignment with a conduction band offset of 0.41 eV and a valence band offset of 0.25 eV. In particular, we observed a remarkable interlayer coupling and associated exciton relaxation at the hetero-interface due to the misoriented stacks. By analyzing the band structures and charge densities of the vertical stacks using first-principles calculations, we reveal that the interlayer coupling is a function of the interlayer distance and is relatively insensitive to the angle of misorientation.
关键词： band alignment,2D materials,physical vapor deposition,interlayer coupling,heterostructures
更新于2025-09-19 17:15:36
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Composition, structure and morphology of ZnOa??Co3O4 ceramic targets in the process of pulsed laser thin film deposition
摘要： This paper presents the results of the study of the composition, structure and morphology of ZnO–Co3O4 ceramic targets before and after laser ablation by the KrF excimer laser. X-ray diffraction analysis showed that the composition of the targets changes under the thermal effects of laser radiation: a new phase of CoO of the cubic structure is formed (a = 4.25 ?). The radial distribution of elements in the ZnO–Co3O4 targets after ablation by the KrF excimer laser was discovered for the first time. The atomic concentration of cobalt in the center was determined to be several times higher than its concentration at the edge of the targets. This can be explained by the thermal model of laser-semiconductor interaction. The morphology of the targets surface after the laser ablation was discovered to undergo significant changes. Pulsed nanosecond laser radiation induces the formation of center-oriented cone-shaped structures and micro-whiskers on the target surface. It was determined that the higher is the concentration of doping impurities in the target, the greater is the number of structures observed on the surface. The formation of “cones” and microwhiskers is explained by the generalized growth model of the vapor–liquid–crystal mechanism.
关键词： A1. Growth models,A2. Bulk crystal growth,A1. Characterization,A3. Physical vapor deposition processes,B2. Semiconducting II-VI materials,A1. Crystal structure
更新于2025-09-19 17:13:59
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Self-Powered SnS1-xSex Alloy/Silicon Heterojunction Photodetectors with High Sensitivity in a Wide Spectral Range
摘要： Alloy engineering and heterostructures designing are two efficient methods to improve the photosensitivity of 2D material-based photodetectors. Herein, we report the first-principle calculation about the band structure of SnS1-xSex (0 ≤ x ≤ 1) and synthesize these alloy nanosheets. Systematic measurements indicate that SnS0.25Se0.75 exhibits the highest hole mobility (0.77 cm2·V-1·s-1) and a moderate photoresponsivity (4.44 × 102 A·W-1) with fast response speed (32.1/57.5 ms) under 635 nm irradiation. Furthermore, to reduce the dark current and strengthen the light absorption, a self-driven SnS0.25Se0.75/n-Si device has been fabricated. The device achieved a preeminent photo-responsivity of 377 mA·W-1, a detectivity of ~1011 Jones and Ilight/Idark ratio of ~4.5×102. In addition, the corresponding rising/decay times are as short as 4.7/3.9 ms. Moreover, a broadband sensitivity from 635 nm to 1200 nm is obtained and the related photoswitching curves are stable and reproducibility. Noticeably, the above parameters are comparable or superior to the most of reported group IVA layered materials-based self-driven photodetectors. Last, the synergistic effects between the SnS0.25Se0.75 nanosheets and the n-Si have been discussed by the band alignment. These brilliant results will pave a new pathway for the development of next generation 2D alloy-based photoelectronic devices.
关键词： alloy engineering,photodetectors,Tin chalcogenides,physical vapor deposition,van der Waals heterostructure
更新于2025-09-16 10:30:52
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Optical and Morphological properties of environmentally benign Cu-Tin Sulphide Thin films grown by Physical Vapor Deposition Technique
摘要： Present work has set about the synthesis of Tin-Diethyl dithiocarbamate Sn (S2CN (Et) 2) n]) and Copper diethyldithiocarbamate Cu (S2CN(Et)2) complex by utilizing single source method. Sn (S2CN (Et) 2) n]) complex are further used for deposition of Tin Sulphide thin films via Physical Vapor deposition with varying concentration of copper acting as dopant specie. The fabricated doped and un-doped films were confronted to functional group detection (FTIR), optical (Uv-Vis), structural (XRD) and morphological (SEM, EDX) analysis to retrieve the hidden information. FTIR peaks of Copper and Tin complex confirmed the formation of dithiocarbamate complexes by enumerating the stretching and bending vibrational modes of bonding and metal Sulphur linkage. X-ray diffraction elucidate the predominant phase of SnS with 1:1 ratio which depicted the fabrication at high temperature. Optical investigation represented the decrease in band gap by 6% extrinsic addition while increase at 10 % doping. The enhancement in band gap is also clear from the increased absorption edge upon 10% addition. Surface morphology of films was heterogeneous along flakes with compaction of spherical particles as demonstrated by SEM. The obtained results of material (SnS) being environmentally benign were therefore discussed to assess its aptness in optoelectronic devices.
关键词： Physical vapor deposition,band gap,doping,Tin Sulphide,FTIR
更新于2025-09-09 09:28:46
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An Inverted Magnetron Operating in HiPIMS Mode
摘要： An ionized physical vapor deposition technique for thin ferromagnetic films is proposed. The technique is based on high power impulse magnetron sputtering (HiPIMS) with positive discharge polarity. A gapped-target was employed as the cathode of the magnetron. By applying positive HiPIMS pulses to the anode, sputtered particles inside the magnetron source were ionized and extracted through the gap. Using a discharge current with a peak of about 13 A, an ion flux in the order of 1021 m?2s?1 was obtained at a distance of 45 mm from the magnetron. In addition, deposition rates of up to 1.1 ?/s for nickel films were achieved using a 30 Hz repetition rate and 300 μs pulse width.
关键词： ferromagnetic,ionized physical vapor deposition,HiPIMS,magnetron sputtering,thin films
更新于2025-09-09 09:28:46