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Deposition of TiO <sub/>2</sub> photocatalyst on polyethylene terephthalate or polyimide polymer films by reactive sputtering for flexible photocatalytic sheets
摘要： Polycrystalline anatase TiO2 films were deposited by rf reactive magnetron sputtering on polyethylene terephthalate (PET) or polyimide (PI) films with different buffer layers, such as SiO2 or Zn2SnOx (ZTO) between the TiO2 film and the substrate. Such TiO2/(SiO2 or ZTO)/(PET or PI) sheets with high transmittance in the visible region of light performed high photo-decomposition ability of CH3CHO under the UV irradiation of the black light centered at 352 nm. In the case of using SiO2 as the buffer layer, “nano-pore layer” was observed clearly in full area of the polymer substrates close to the buffer layers after the UV irradiation, whereas such degradation was suppressed drastically in the case of using ZTO as the buffer layer. Such photocatalytic sheets performed also photo-induced hydrophilicity by the UV irradiation, where the contact angle to pure water became around 5O under the UV irradiation. After additional deposition of SiO2 by the reactive sputtering under rather high total gas pressure of 3.0 Pa on the outermost surface of the TiO2 films, the photo-induced hydrophilicity was maintained for more than 98 days in the dark. Such 3-layerd SiO2/TiO2/ZTO on PET or PI substrates should be the promising flexible photocatalytic sheets with the retentional photo-induced hydrophilicity.
关键词： PET,TiO2,Photocatalyst,PI,Reactive Sputtering,Flexible substrate
更新于2025-11-19 16:51:07
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Effect of gas mixing ratio on structural characteristics of titanium dioxide nanostructures synthesized by DC reactive magnetron sputtering
摘要： In this work, high-quality and highly pure titanium dioxide nanostructures were synthesized by a homemade dc closed-field unbalanced reactive magnetron sputtering system. The operation parameters of the magnetron sputtering system were optimized to prepare TiO2 nanostructures as thin films on glass substrates. These nanostructures were characterized by x-ray diffraction, atomic force microscopy and Fourier-transform infrared spectroscopy. Both anatase and rutile phases were identified. The mixing ratio of argon and oxygen (Ar:O2) gases was found very important to control the structural characteristics of the prepared nanostructures.
关键词： Nanostructures,Reactive sputtering,Titanium dioxide,Thin films
更新于2025-09-23 15:23:52
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A promising CuOx/WO3 p-n heterojunction thin-film photocathode fabricated by magnetron reactive sputtering
摘要： A CuOx/WO3 thin-film based on p-n heterojunction proposed as a highly performance and stable photocathode. The CuOx/WO3 thin-film was deposited by magnetron reactive sputtering layer by layer, followed with slow rate annealing in O2 ambient. This is an excellent method for high-quality and uniform composite thin-film deposition with large areas at a high growth rate. The optimized CuOx/WO3 thin-film photocathode after slow rate annealing at 500 °C in O2 provides an obviously enhanced photoinduced current density of -3.8 mA cm-2 at a bias potential of -0.5 V (vs. Ag/AgCl), which value is 1.5 times higher than that of bared CuOx thin-film. This highly enhanced photoelectrochemical performance is attributed to p-n heterojunction, which accelerates the photogenerated electrons and holes transfer to n-WO3 and p-CuOx, thereby accelerate the separation of photogenerated carries. In addition, WO3 layer covered on the surface of CuOx thin film can improve the stability of Cu2O in electrolytes.
关键词： p-n heterojunction,Tungsten oxide,Photoelectrochemical,Copper oxide,Magnetron reactive sputtering
更新于2025-09-23 15:22:29
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Multifunctional monoclinic VO2 nanorod thin films for enhanced energy applications: Photoelectrochemical water splitting and supercapacitor
摘要： Monoclinic VO2 nanorod thin films were deposited on indium?tin-oxide-coated glass substrates using radio-frequency reactive magnetron sputtering at a substrate temperature of 300 °C and various O2 flow rates. The thin films were characterized via standard analysis techniques. The VO2 thin films exhibited a highly crystalline monoclinic phase with an indirect band gap of ~1.73 eV. At optimized O2 flow rate (4 sccm), the thin films was observed nanorod structures, exhibited a remarkable photocurrent of ~0.08 mA cm?2 during photoelectrochemical water splitting in the visible region. Electrochemical performance tests of the nanorod films revealed a specific capacitance of ~486 mF cm?2 at a scan rate of 10 mVs?1. In addition, amperometric I–t curves showed that VO2 thin film electrodes were highly stable during the photo-oxidation process. The nanorod films also exhibited a good specific capacitance of ~120 mF cm?2 after 5000 cycles at a scan rate of 100 mVs?1. The photocurrents during photoelectrochemical water splitting and the specific capacitance of VO2 thin films deposited at O2 flow rates of 2 and 6 sccm were 0.06 and 0.07 mA cm?2 and 398 and 37 mF cm?2, respectively. The films deposited under Ar at 8 sccm and O2 at 4 sccm showed the highest photoelectrochemical water splitting performance and specific capacitance, owing mainly to their nanorod-like morphology.
关键词： Supercapacitor,Partial pressure,Reactive sputtering,Photoelectrochemical water splitting,VO2,Monoclinic
更新于2025-09-23 15:22:29
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se <sub/>2</sub> Solar Cells
摘要： We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.
关键词： ACIGS,positron annihilation,defects,potassium,vacancies,reactive sputtering,photovoltaic cells
更新于2025-09-23 15:21:01
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Efficiency enhancement of TiOx electron-transporting layer-based ultrathin p-type c-Si solar cell by reactive sputtering of backside MoOx hole-transporting contact
摘要： The importance of efficient carrier selective transport at the backside contact significantly increases with thickness reduction of c-Si solar cells. Here, MoOx backside hole-transporting layer is fabricated on TiOx electron-transporting layer-based ultrathin c-Si solar cell with a final configuration of Ag/ITO/Mg/TiOx/45 μm p-type c-Si/MoOx/Ag by reactive magnetron sputtering method at room temperature. The effects of oxygen ratio and sputtering power on the film phase, bandgap, and surface roughness are investigated. Moreover, the contact performance between Ag and p-type c-Si is systematically studied and optimized by MoOx insertion. Based on the optimized MoOx thin film, the obtained totally dopant-free cell shows an enhancement of all cell parameters with a resultant high efficiency of 12.81%, which is about 12.8% relatively higher than that of conventional backside p+-based one (11.36%). In the combination of experiment and simulation processes, better performance of MoOx-based cell can be ascribed to the improvement of both electrical and optical performances of the device. The realization of MoOx-based contact at room temperature enables the solar cell fabrication under planar state possible, which can greatly avoid the bowing effect and reduce the yield losses and energy consumption during the fabrication of ultrathin c-Si solar cells.
关键词： reactive sputtering,c-Si solar cell,hole-transporting contact,MoOx,TiOx
更新于2025-09-23 15:21:01
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One-step H2S reactive sputtering for 2D MoS2/Si heterojunction photodetector
摘要： A technique for directly growing two-dimensional (2D) materials onto conventional semiconductor substrates, enabling high-throughput and large-area capability, is required to realise competitive 2D transition metal dichalcogenide devices. A reactive sputtering method based on H2S gas molecules and sequential in-situ post-annealing treatment in the same chamber was proposed to compensate for the relatively deficient sulfur atoms in the sputtering of MoS2 and then applied to a 2D MoS2/p-Si heterojunction photodevice. X-ray photoelectron, Raman, and UV-visible spectroscopy analysis of the as-deposited Ar/H2S MoS2 film were performed, indicating that the stoichiometry and quality of the as-deposited MoS2 can be further improved compared with the Ar-only MoS2 sputtering method. For example, Ar/H2S MoS2 photodiode has lower defect densities than that of Ar MoS2. We also determined that the factors affecting photodetector performance can be optimised in the 8–12 nm deposited thickness range.
关键词： H2S gas,two-dimensional layered MoS2,reactive sputtering,heterojunction photodiode
更新于2025-09-23 15:19:57
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Stable magnesium zinc oxide by reactive Co-Sputtering for CdTe-based solar cells
摘要： Magnesium zinc oxide (MZO) is a promising front contact material for CdTe solar cells. Due to its higher band gap than traditional CdS, MZO can reduce parasitic absorption to significantly increase short-circuit current density while also providing a benefit of conduction band offset tuning through Mg:Zn ratio optimization. MZO has been successfully implemented into CdTe devices, however its stability has been of concern. The MZO stability issue has been attributed to the presence of oxygen in the CdTe device processing ambient, leading to double-diode behavior (S-kink) in the current density-voltage curves. Here we report on MZO thin films deposited by reactive co-sputtering. The reactively co-sputtered MZO thin films have encouraging stability, show no significant variation in work function of the surface over a period of 6 months, as measured by Kelvin probe. Energy conversion efficiencies of around 16% have been achieved both with and without presence of oxygen in device processing ambients across multiple research facilities. These efficiencies should be possible to increase further by tuning of the thin film deposition and device processing parameters, especially through optimization of the back contact.
关键词： Stability,Thin film photovoltaics,Reactive sputtering,CdTe,MgxZn1-xO
更新于2025-09-23 15:19:57
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Sputtered ZnSnO buffer layers for kesterite solar cells
摘要： Replacing the CdS buffer layer with a ZnSnO one in Cu2ZnSnS4-based solar cells allows both to improve the device performances and to avoid using toxic Cd. Additionally, using a sputtered buffer layer is a major asset for solar cells fabricated by physical vapor deposition processes. In this study, ZnSnO layers are deposited by sputtering of a single metal-oxide target. Structural and optical properties of the layers deposited on Si or glass are first described. The possibility of modifying the ZnSnO metallic composition by adjusting the deposition power is demonstrated. Attempts to improve the optoelectronic properties of the ZnSnO layers with Ar:O2 or Ar:SF6 reactive sputtering are shown as well. These ZnSnO buffer layers are transferred in Mo/CZTS/ZnSnO/ZnO:Al solar cells. After post-deposition thermal treatment and optimization of the deposition condition (notably with the use of Ar:O2 or Ar:SF6 reactive sputtering), a solar cells with a power conversion efficiency of 5.2% is demonstrated. It is 0.6% absolute higher than the reference solar cell with a CdS buffer layer. To avoid absorber damaging and achieve high performances, deposition power must be as low as possible. A two stages sputtering process is used to conciliate both the absorber surface preservation and a reasonable deposition time. Last, photovoltaic properties of optimized CZTS- and CZTSe-based solar cells with ZnSnO buffer layers are compared.
关键词： Cu2ZnSnS4,ZnSnO buffer layer,Cd-free devices,sputtering,reactive sputtering,Kesterite solar cells
更新于2025-09-19 17:13:59
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Optical frequency comb generation with low temperature reactive sputtered silicon nitride waveguides
摘要： Integrated silicon nitride (SiN) waveguides with anomalous dispersion have the potential to bring practical nonlinear optics to mainstream photonic integrated circuits. However, high-stress and high-processing temperatures remain an obstacle to mass adoption. We report low-stress, high-confinement, dispersion-engineered SiN waveguides utilizing low temperature grown reactive sputtered thin-films. We demonstrate a microring resonator with an intrinsic quality factor of 6.6 × 105, which enabled us to generate a native free spectral range spaced frequency comb with an estimated on-chip pump power of 850 mW. Importantly, the peak processing temperature is 400 ○C making this approach fully back-end compatible for hybrid integration with preprocessed CMOS substrates and temperature sensitive photonic platforms such as lithium niobate on insulator.
关键词： reactive sputtering,optical frequency comb,silicon nitride waveguides,photonic integrated circuits,nonlinear optics
更新于2025-09-19 17:13:59