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Layer-by-layer self-assembly of polyaniline nanofibers/TiO2 nanotubes heterojunction thin film for ammonia detection at room temperature
摘要： In this paper, for the first time, polyaniline nanofibers/TiO2 nanotubes (PANI/TiO2) heterojunction thin film has been prepared on Pt interdigital electrodes by layer-by-layer self-assembly method and applied in room temperature NH3 detection. It is found that the optimal self-assembly layer number is three (PANI/TiO2-3) compared to one layer (PANI/TiO2-1) and five layers (PANI/TiO2-5). The PANI/TiO2-3 thin film sensor possesses superior response characteristics compared with our other PANI based sensors, including higher response value (336%@5 ppm NH3), acceptable response/recovery time (110 s/1086 s@5 ppm NH3), low detection limit (0.5 ppm), and remarkable selectivity. The enhanced gas sensing performances could be ascribed to the tremendous variation of the carrier concentration caused by the p-n junctions as well as the increased specific surface area and pore volume. This work not only offers a superb strategy to fabricate heterojunction thin film but also accelerates the development of room-temperature operable NH3 sensors.
关键词： Ammonia detection,Layer-by-layer self-assembly,Polyaniline/TiO2 heterojunction,Thin film,Room temperature operation
更新于2025-09-23 15:23:52
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[IEEE 2019 14th IEEE Conference on Industrial Electronics and Applications (ICIEA) - Xi'an, China (2019.6.19-2019.6.21)] 2019 14th IEEE Conference on Industrial Electronics and Applications (ICIEA) - Research and Application of Remote Removal of Floating Foreign Objects on Transmission Lines Based on Fiber Laser
摘要： We present a detailed investigation of the responsivity and the noise in room temperature THz direct detectors made of YBa Cu O (YBCO) thin-film nano-bolometers. The YBCO nano-bolometers are integrated with planar spiral antennas covering a frequency range from 100 GHz to 2 THz. The detectors were characterized at 1.6 THz, 0.7 THz, 400 GHz and 100 GHz. The maximum electrical responsivity of 70 V/W and a minimum noise equivalent power (NEP) of 50 pW/Hz were measured, whereas the highest optical responsivity was 45 V/W. The noise in nano-bolometers is independent on the device volume and for a given modulation frequency and a dc voltage Hz.
关键词： room temperature operation,YBa Cu O (YBCO) film,responsivity,THz detectors,Bolometer
更新于2025-09-19 17:13:59
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[IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Drift-induced Nonreciprocal Graphene Plasmonics
摘要： We present a detailed investigation of the responsivity and the noise in room temperature THz direct detectors made of YBa Cu O (YBCO) thin-film nano-bolometers. The YBCO nano-bolometers are integrated with planar spiral antennas covering a frequency range from 100 GHz to 2 THz. The detectors were characterized at 1.6 THz, 0.7 THz, 400 GHz and 100 GHz. The maximum electrical responsivity of 70 V/W and a minimum noise equivalent power (NEP) of 50 pW/Hz were measured, whereas the highest optical responsivity was 45 V/W. The noise in nano-bolometers is independent on the device volume and for a given modulation frequency and a dc voltage.
关键词： THz detectors,YBa Cu O (YBCO) film,responsivity,room temperature operation,Bolometer
更新于2025-09-16 10:30:52
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A 271.8 nm deep-ultraviolet laser diode for room temperature operation
摘要： We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A.
关键词： room temperature operation,aluminum nitride substrate,deep-ultraviolet,laser diode,polarization-induced doping
更新于2025-09-12 10:27:22
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InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300?K
摘要： Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photodetectors are widely used in the SWIR region of 1–3 μm; however, they only capture a part of the region due to a cut-off wavelength of 1.7 μm. This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick inxAl1?xAs graded and AlAs buffer layers between the InAs layer and the GaAs substrate. At room temperature, the fabricated InAs photodetector operated in an infrared range of approximately 1.5–4 μm and its detectivity (D*) was 1.65 × 108 cm · Hz1/2 · W?1 at 3.3 μm. To demonstrate performance, the Sherlock Holmes mapping images were obtained using the photodetector at room temperature.
关键词： InxAl1?xAs graded buffer,InAs p-i-n photodetector,GaAs substrate,room temperature operation,Short-wave infrared (SWIR),InGaAs photodetectors
更新于2025-09-11 14:15:04
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Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate
摘要： Single-stack InAsSb self-assembled quantum dashes (QDashes) laser grown by metalorganic vapor phase epitaxy based on InP (001) substrate is reported. High-quality InAsSb quantum dashes have been acquired under the optimized growth conditions, such as substrate temperature, growth rate, deposition thickness and V/III ratio. Surface QDashes morphologies have been characterized by atomic force microscopy whereas the ones buried in active region have been investigated by transmission electron microscope with high resolution X-ray Energy Dispersive Spectroscopy to confirm the antimony composition. Double channel waveguide laser with 40 μm width ridge has been fabricated by standard optical lithography and wet etching. Pulsed room temperature operation demonstrates the wavelength from 1.72 to 1.79 μm for different injection currents. In addition, the laser peak output power can exceed 600 mW with 12.8% of differential quantum efficiency and even under continuous wave operation, the maximum optical power still remains 26 mW.
关键词： room temperature operation,InAsSb,laser,quantum dashes,InP substrate
更新于2025-09-11 14:15:04