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A low molecular weight OLED material: 2-(4-((2-hydroxyethyl)(methyl)amino)benzylidene)malononitrile. Synthesis, crystal structure, thin film morphology, spectroscopic characterization and DFT calculations
摘要： 2-(4-((2-Hydroxyethyl)(methyl)amino)benzylidene)malononitrile (HEMABM) was synthesized from 4-[hydroxymethyl(methyl)amino]benzaldehyde and propanedinitrile to obtain a low molecular weight fluorescent material with an efficient solid-state emission and electroluminescence properties comparable to the well-known poly(2-methoxy-5(20-ethyl)hexoxyphenylenevinylene) (MEH-PPV). The HEMABM was used to prepare an organic light-emitting diode by a solution process. Despite the title compound being a small molecule, it showed optical properties and notable capacity to form a film with smooth morphology (10.81 nm) closer to that of polymer MEH-PPV (10.63 nm). The preparation of the device was by spin coating, the electrical properties such as threshold voltage were about 1.0 V for both HEMABM and MEH-PPV, and the luminance 1300 cd m?2 for HEMABM and 2600 cd m?2 for MEH-PPV. IR, NMR, and EI. Besides this low molecular weight compound was characterized by SCXRD, a quantitative analysis of the intermolecular interactions by PIXEL, density functional theory (DFT) calculations are reported.
关键词： electroluminescence,OLED,MEH-PPV,low molecular weight,solution process,HEMABM
更新于2025-09-11 14:15:04
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Blue-emitting dendritic molecule with dual functionality as host and dopant for solution-processed white OLEDs with red-emitting material
摘要： In this study, a three-armed dendritic molecule, 1,3,5-tris(10-(4-(2,6-diphenylpyrimidin-4-yl)phenyl)-9,9-diphenyl-9,10-dihydroacridin-2-yl)benzene (3PDPAc), was successfully synthesized and utilized as a blue dopant and its host of two-component white organic light-emitting diodes (WOLEDs). The high molecular weight of dendritic 3PDPAc showed an advantage in the production of rigid thin films with fine surface morphology after doping with red-emitting 7-(7,7-dimethyl-5,13,13-triphenyl-7,13-dihydro-5H-indeno[1,2-b]acridin-2-yl)benzo[c][1,2,5]thiadiazole-4-carbonitrile (IABTCN). Transient photoluminescence spectroscopy confirmed that 3PDPAc and IABTCN displayed conventional fluorescence behavior. Furthermore, it was possible to form a two-component emission layer with 3PDPAc and IABTCN when fabricating a WOLED. The WOLED device bearing 3PDPAc and IABTCN (99.5:0.5 wt. ratio) exhibited 3.80% of the maximum external quantum efficiency (EQE) and CIE coordinates of (0.33, 0.34) which indicates almost pure white emission. The chromaticity of white color emission could be tuned from cool white to warm white by varying the concentration of IABTCN. Moreover, the device with 3PDPAc and IABTCN has been observed to display emission stability because of the miscibility of the host and dopants. Thus, the dendritic structure of 3PDPAc is advantageous for fabrication of a rigid emitting layer.
关键词： White organic light-emitting diodes,Blend film,Solution-process,Dendritic molecule
更新于2025-09-11 14:15:04
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Photocurrent Characteristics of Zinc-Oxide Films Prepared by Using Sputtering and Spin-Coating Methods
摘要： The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.
关键词： Phototransistor,Sputter,Thin film transistor,Solution process,Zinc Oxide
更新于2025-09-10 09:29:36
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Solution-processed inorganic p-channel transistors: Recent advances and perspectives
摘要： For decades, inorganic n-type metal-oxide semiconductors have attracted great interest across a wide range of applications due to their excellent electrical property, low cost, high optical transparency, and good ambient stability. The next attention has focused on the development of high-performance p-type semiconductors with comparable opto/electric properties to n-type counterparts. This paper provides a comprehensive overview of recent progress in solution-processed inorganic p-type semiconductors that can be applied as channel layers in thin-?lm transistors and complementary metal-oxide semiconductor-based integrated circuits. We ?rst introduce conventional p-type oxide semiconductors and review their achievements on related devices. Then, we pay a speci?c focus on emerging (pseudo)halide materials for realization of transparent, low-temperature and high-performance printable electronics and circuits.
关键词： Inorganic p-type semiconductor,Low-temperature process,Solution process,Field-e?ect transistor,Printable electronics
更新于2025-09-09 09:28:46
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P-1.10: Solution-processed metal oxide semiconductors fabricated with oxygen radical assisting perchlorate aqueous precursors through a new low-temperature reaction route
摘要： In this report, an innovative and simple chemical route for fabricating MO semiconducting low temperature without any fuel additives or special annealing methods is demonstrated. Different from combustion method, the precursor that we compound contains only two kinds of oxidizers. The precursor, which consisted of perchlorate, nitrate, and DI water, is easily converted into In2O3 at an annealing temperature of 250 °C due to oxygen radical assisting decomposition and large amount of heat generation. It is found that perchlorate salt can decompose and form oxide film with high quality at lower temperature when assisted by nitrate salt. The optimized In2O3-TFT fabricated at 250°C via this precursor exhibits a saturate mobility of 14.5 cm2V-1s-1. Furthermore, this approach has been expanded to fabrication films at 350°C and attained improved performance.
关键词： metal oxide semiconductor,perchlorate salt,solution-process,oxygen radical,Thin-film transistor
更新于2025-09-09 09:28:46
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A Dual-functional Superoxide Precursor to Improve the Electrical Characteristics of Oxide Thin Film Transistors
摘要： We investigated a method to simultaneously improve the mobility and reliability of solution-processed zinc tin oxide thin film transistors (ZTO TFTs) using a dual-functional potassium superoxide precursor. Potassium cations in the potassium superoxide (KO2) precursor act as carrier suppliers in the ZTO thin film to improve the carrier (electron) concentration, which allows the potassium-doped ZTO TFT to exhibit high mobility. The anions in the precursor exist as superoxide radicals that reduce oxygen vacancies during the formation of thin oxide film. Consequently, the KO2-treated ZTO TFTs exhibited improved mobility and reliability compared with pristine ZTO TFTs, with an increase in field effect mobility from 5.57 to 8.74 cm2/Vs and a decrease in the threshold voltage shift from 7.18 to 3.85 V, after a positive bias temperature stress test conducted over 5000 sec.
关键词： oxide semiconductor,superoxide radical,solution process,Dual-functional precursor,thin film transistor
更新于2025-09-09 09:28:46
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Optimization of a Solution-Processed Quantum-Dot Light-Emitting-Diode with an Inverted Structure
摘要： Colloidal quantum-dot based light-emitting diodes (QD-LEDs) are attractive for use in display devices because of the remarkable electrical and optical characteristics of colloidal quantum dots. An inverted structure may be one method to achieve the necessary multilayer device structures in QD-LEDs. In this study, each layer of an inverted-structure QD-LED was optimized. The effect of the solvent on the hole transfer layer was investigated, along with the effect of the concentration of the electron transfer layer, the effect of the co-solvent on the hole transfer layer, and the effect of the concentration and solvent of quantum dot layer. The quantum dots and ZnO NPs were synthesized as the emitting layer and carrier transporting layer using a solution-mediated process. The inverted QD-LED device showed a luminance of 3,762 cd/m2, current ef?ciency of 1.86 cd/A, and EQE of 1.18%.
关键词： Inverted Structure,Solution-Process,Quantum Dot Light Emitting Diode (QD-LED)
更新于2025-09-04 15:30:14
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Electrical Stability of Solution-Processed Indium Oxide Thin-Film Transistors
摘要： We investigated the electrical stability of bottom-gate/top-contact-structured indium oxide (In2O3) thin-film transistors (TFTs) in atmospheric air and under vacuum. The solution-processed In2O3 film exhibits a nanocrystalline morphology with grain boundaries. The fabricated In2O3 TFTs operate in an n-type enhancement mode. Over repeated TFT operation under vacuum, the TFTs exhibit a slight increase in the field-effect mobility, possibly due to multiple instances of the “trapping and release” behavior of electrons at grain boundaries. On the other hand, a decrease in the field-effect mobility and an increase in the hysteresis are observed as the measurement continues in atmospheric air. These results suggest that the electrical stability of solution-processed In2O3 TFTs is significantly affected by the electron-trapping phenomenon at crystal grain boundaries in the In2O3 semiconductor and the electrostatic interactions between electrons and polar water molecules.
关键词： Thin-Film Transistor,Stability,Solution Process,Indium Oxide
更新于2025-09-04 15:30:14
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Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin-Film Circuitry for Low-Cost Wireless Energy Harvesting
摘要： Direct additive fabrication of thin-film electronics using a high-mobility, wide-bandgap amorphous oxide semiconductor (AOS) can pave the way for integration of efficient power circuits with digital electronics. For power rectifiers, vertical thin-film diodes (V-TFDs) offer superior efficiency and higher frequency operation compared to lateral thin-film transistors (TFTs). However, the AOS V-TFDs reported so far require additional fabrication steps and generally suffer from low voltage handling capability. Here, these challenges are overcome by exploiting in situ reactions of molybdenum (Mo) during the solution-process deposition of amorphous zinc tin oxide film. The oxidation of Mo forms the rectifying contact of the V-TFD, while the simultaneous diffusion of Mo increases the diode’s voltage range of operation. The resulting V-TFDs are demonstrated in a full-wave rectifier for wireless energy harvesting from a commercial radio-frequency identification reader. Finally, by using the same Mo film for V-TFD rectifying contacts and TFT gate electrodes, this process allows simultaneous fabrication of both devices without any additional steps. The integration of TFTs alongside V-TFDs opens a new fabrication route for future low-cost and large-area thin-film circuitry with embedded power management.
关键词： additive fabrication,amorphous oxide semiconductors,thin-film circuitry,large-area electronics,solution process
更新于2025-09-04 15:30:14