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Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration
摘要： We have fabricated large area integrated top-gate nMISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two passivation films of ALD-Al2O3 enhance the process endurance of MoS2 channel. Therefore, we demonstrate TiN-top-gate nMISFET, which is a substantial first step to realize industrial chip-level LSIs with MoS2-channel FETs.
关键词： Top gate,MISFET,Transition metal di-chalcogenide,Sputtering,Passivation,Molybdenum disulfide,Large area integration
更新于2025-09-23 15:21:21
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Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS
摘要： The design of efficient substrates for surface-enhanced Raman spectroscopy (SERS) for large-scale fabrication at low cost is an important issue in further enhancing the use of SERS for routine chemical analysis. Here, we systematically investigate the effect of different radio frequency (rf) plasmas (argon, hydrogen, nitrogen, air and oxygen plasma) as well as combinations of these plasmas on the surface morphology of thin silver films. It was found that different surface structures and different degrees of surface roughness could be obtained by a systematic variation of the plasma type and condition as well as plasma power and treatment time. The differently roughened silver surfaces act as efficient SERS substrates showing greater enhancement factors compared to as prepared, sputtered, but untreated silver films when using rhodamine B as Raman probe molecule. The obtained roughened silver films were fully characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron (XPS and Auger) and ultraviolet–visible spectroscopy (UV–vis) as well as contact angle measurements. It was found that different morphologies of the roughened Ag films could be obtained under controlled conditions. These silver films show a broad range of tunable SERS enhancement factors ranging from 1.93 × 102 to 2.35 × 105 using rhodamine B as probe molecule. The main factors that control the enhancement are the plasma gas used and the plasma conditions, i.e., pressure, power and treatment time. Altogether this work shows for the first time the effectiveness of a plasma treatment for surface roughening of silver thin films and its profound influence on the interface-controlled SERS enhancement effect. The method can be used for low-cost, large-scale production of SERS substrates.
关键词： plasma treatment,sputtering,surface-enhanced Raman spectroscopy (SERS),silver,surface roughening
更新于2025-09-23 15:21:21
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Efficiency enhancement of Cu(In,Ga)Se <sub/>2</sub> thin film solar cells by employing onmi-directional ZnO nanostructure with MgF <sub/>2</sub> anti-reflection-coating layer
摘要： An omni-directional, graded-index, and textured ZnO nanorods (n = 1.7-2.0) with MgF2 (n = 1.37) antireflection (AR)-coating layer for Cu(In,Ga)Se2 solar cells grown by hydrothermal method are presented. We achieve that the graded index structure can reduce a weighted global reflectance of 5.5%, and significantly improve a current density (JSC) of Cu(In,Ga)Se2 solar cells up to 32.3 mA/cm2 which is comparable to a general MgF2 single layer AR coating. Optimized AR-coating layer leads to decreasing Fresnel reflection by gradient refractive index between ZnO nanorods and air. According to our experiment results, ZnO nanostructure with MgF2 AR-coating layer can be used for various photovoltaic cells to enhance the light conversion efficiency.
关键词： solar cells,optical properties,electrical properties,sputtering
更新于2025-09-23 15:21:21
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Highly transparent zinc nitride thin films by RF magnetron sputtering with enhanced optoelectronic behavior
摘要： Transparent semiconducting nitrides are important materials for many modern technologies. Here, optical transparent semiconducting zinc nitride (Zn3N2) thin films have been developed by reactive RF magnetron sputtering at different nitrogen (N2) contents. The deposited films are found to be cubic with preferred orientation of (3 2 1) plane. High optical transmittance (～96%) and refractive index (1.32) at the wavelength of 500 nm and optical band gap of 3.1 eV have been observed for the films deposited at 45% nitrogen content. The investigation on other optical constants such as extinction coefficient and dielectric constant as a function of wavelength shows enhanced optical behavior. The Zn3N2 thin films show n-type conductivity with carrier concentration of ～1020–1021 cm?3, mobility in the range of 4 to 56 cm2/Vs (which is 1–2 times higher than the values of TCOs) and resistivity around 10?4 Ωcm as a function of nitrogen content. These results suggested that Zn3N2 thin films could perform as potential transparent semiconductors for thin film solar cells.
关键词： Electron mobility,Zinc nitride,Optical constants,Transparent semiconductor,Reactive RF sputtering
更新于2025-09-23 15:21:21
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Circumferential growth of zinc oxide nanostructure anchored over carbon fabric and its photocatalytic performance towards p-nitrophenol
摘要： In present study, zinc oxide (ZnO) nanostructure anchored on carbon fabric (CF) was prepared using a combinational techniques of RF magnetron sputtering and hydrothermal method. The sputter seeded CF aided for the circumferential growth of ZnO nanostructure and its structural and optical characterization evidencing the c-axis orientation with the band gap of, 3.21 eV. ZnO nanostructure anchored CF was subjected towards UV light photocatalytic activity of p-nitrophenol for 150 min and remarkably higher activity of 98% was observed with better retrieval and recyclability upto 5 cycles. Because of these conspicuous features, it can serve as an expedient hybrid platform for photocatalytic application, better than the benchmark acid treated ZnO/CF.
关键词： Carbon fabric,Photocatalytic activity,Nanostructure,Hydrothermal,Sputtering
更新于2025-09-23 15:21:21
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Comparison of the Physicochemical Properties of TiO2 Thin Films Obtained by Magnetron Sputtering with Continuous and Pulsed Gas Flow
摘要： In this paper, a comparison of TiO2 thin ?lms prepared by magnetron sputtering with a continuous and pulsed gas ?ow was presented. Structural, surface, optical, and mechanical properties of deposited titanium dioxide coatings were analyzed with the use of a wide range of measurement techniques. It was found that thin ?lms deposited with a gas impulse had a nanocrystalline rutile structure instead of ?brous-like anatase obtained with a continuous gas ?ow. TiO2 thin ?lms deposited with both techniques were transparent in the visible wavelength range, however, a much higher refractive index and packing density were observed for coatings deposited by the pulsed gas technique. The application of a gas impulse improved the hardness and scratch resistance of the prepared TiO2 thin ?lms.
关键词： optical properties,scratch resistance,thin ?lms,gas impulse magnetron sputtering,microstructure,hardness,surface properties,mechanical properties,TiO2
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Control of Vacancy Defects in Reactively Sputtered (Ag,Cu)(In,Ga)Se <sub/>2</sub> Solar Cells
摘要： We report positron annihilation spectroscopy measurements revealing the prevalence of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells. Together with compositional and structural analysis as well as capacitance-voltage measurements, an intricate interplay is observed between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration. These properties can be tuned during absorber growth by varying growth temperature and alkali content. Exploiting this interplay may be the key to achieving high efficiency in ACIGS solar cells.
关键词： ACIGS,positron annihilation,defects,potassium,vacancies,reactive sputtering,photovoltaic cells
更新于2025-09-23 15:21:01
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Sputtered and selenized Sb2Se3 thin-film solar cells with open-circuit voltage exceeding 500??mV
摘要： Antimony selenide (Sb2Se3) is a potential absorber material for environment-friendly and cost-efficient photovoltaics and has achieved considerable progress in recent years. However, the severe open-circuit voltage (Voc) deficit ascribed to the interface and/or bulk defect states has become the main obstacle for further efficiency improvement. In this work, Sb2Se3 absorber layer was prepared by an effective combination reaction involving sputtered and selenized Sb precursor thin films. The self-assembled growth of Sb2Se3 thin films with large crystal grains, benign preferential orientation, and accurate chemical composition were successfully fulfilled under an appropriate thickness of Sb precursor and an optimized selenization scenario. Substrate structured Sb2Se3 thin-film solar cells, a champion device with a power-conversion efficiency of 6.84%, were fabricated. This device is comparable to state-of-the-art ones and represents the highest efficiency of sputtered Sb2Se3 solar cells. Importantly, the high Voc of 504 mV is closely related to the reduced deep level defect density for the Sb2Se3 absorber layer, the passivated interfacial defects for Sb2Se3/CdS heterojunction interface, and the additional heterojunction heat treatment-induced Cd and S inter-diffusion. This significantly improved Voc demonstrates remarkable potential to broaden its scope of applications for Sb2Se3 solar cells.
关键词： Open-circuit voltage,Selenization,Sb2Se3 solar Cell,Elemental inter-diffusion,Sputtering
更新于2025-09-23 15:21:01
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Fabrication and characterization of Mg-doped ?μ-Ga2O3 solar-blind photodetector
摘要： In this work, Mg-doped ε-Ga2O3 (3.38 cation % of Mg) solar-blind photodetector is fabricated by using radio-frequency magnetron sputtering and metal-organic chemical vapor deposition methods on sapphire substrate. The results show that the Mg-doped ε-Ga2O3 thin film solar-blind photodetector exhibit a photo-to-dark current ratio of 1.68 102, responsivity of 77.2 mA/W, specific detectivity of 2.85 1012 Jones, and external quantum efficiency of 37.8 % at 5 V under 40 μW/cm2 254 nm ultraviolet light illumination, as well as the stable light switching property driven by different applied voltages and light intensities. The achieved Mg-doped ε-Ga2O3 solar-blind photodetector is promised to advance relevant developments of the metastable Ga2O3 optoelectronic devices.
关键词： MOCVD,solar-blind,Mg dopant,magnetron sputtering,ε-Ga2O3
更新于2025-09-23 15:21:01
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Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf <sub/>0.5</sub> Zr <sub/>0.5</sub> O <sub/>2</sub> thin films controlled by oxygen partial pressures during the sputtering deposition process
摘要： To control the polarization switching characteristics of ferroelectric HfxZr1?xO2 (HZO) thin films, the effects of oxygen partial pressure (PO2) during the sputtering deposition of HZO and the area ratio (SI/SF) of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) gate stacks were investigated for ferroelectric synapse transistors. An increase in PO2 resulted in a relative decrease in the ferroelectric orthorhombic phase owing to the compensation of oxygen vacancies into the HZO films. The introduction of an MFMIS gate stack with a smaller SI/SF ratio effectively reduced the electric field applied across the HZO gate insulator. The polarization switching times for the HZO thin films could be modulated in a wide range by means of these two strategies, which were clearly examined to facilitate the synaptic operations of ferroelectric field-effect transistors (FeFETs) using HZO gate insulators. Typical synaptic operations, including paired-pulse facilitation and spike timing-dependent plasticity, were clearly demonstrated to exhibit gradual modulations of the channel conductance of the FeFETs with the evolution of spike signals, and these behaviors were enhanced upon increasing PO2 and decreasing the SI/SF ratio by controlling the switching kinetics of the ferroelectric partial polarizations of the HZO gate insulators in the proposed synapse FeFETs.
关键词： oxygen partial pressure,ferroelectric,Hf0.5Zr0.5O2,sputtering deposition,MFMIS gate stacks,synaptic operations
更新于2025-09-23 15:21:01