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CdZnTe thick film radiation detectors with B and Ga co-doped ZnO contacts
摘要： High quality CdZnTe thick films were prepared on boron and gallium co-doped ZnO (BGZO) transparent conductive films by using close-spaced sublimation (CSS) method. Due to its high stability, hardness and similar thermal expansion coefficient with CdZnTe, BGZO films were also used to replace the traditional metal to form good ohmic contact with CdZnTe. CdZnTe thick film radiation detectors with BGZO/ CdZnTe/ BGZO structure were fabricated. The results showed a well response of the CdZnTe thick film detector (the energy resolution is about 25%) from a 60KeV 241Am γ-source.
关键词： close-spaced sublimation,CdZnTe thick film,detector,ZnO
更新于2025-09-23 15:23:52
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PZT/PZT and PZT/BiT Composite Piezo-Sensors in Aerospace SHM Applications: Photochemical Metal Organic + Infiltration Deposition and Characterization
摘要： The composition of fine-ground lead zirconate-titanate powder Pb(Zr0.52Ti0.48)O3, suspended in PZT and bismuth titanate (BiT) solutions, is deposited on the curved surface of IN718 and IN738 nickel-based super alloy substrates up to 100 μm thickness. Photochemical metal organic and infiltration techniques are implemented to produce smooth, semi-dense, and crack-free random orientated thick piezoelectric films as piezo-sensors, free of any dopants or thickening polymers. Every single layer of the deposited films is heated at 200 °C with 10 wt.% excess PbO, irradiated by ultraviolet lamp (365 nm, 6 watt) for 10 min, pyrolyzed at 400 °C, and subsequently annealed at 700 °C for one hour. This process is repeated successively until reaching the desired thickness. Au and Pt thin films are deposited as the bottom and top electrodes using evaporation and sputtering methods, respectively. PZT/PZT and PZT/BiT composite films are then characterized and compared to similar PZT and BiT thick films deposited on the similar substrates. The effect of the composition and deposition process is also investigated on the crystalline phase development and microstructure morphology as well as the dielectric, ferroelectric, and piezoelectric properties of piezo-films. The maximum remnant polarization of Pr = 22.37 ± 0.01, 30.01 ± 0.01 μC/cm2, the permittivity of εr = 298 ± 3, 566 ± 5, and piezoelectric charge coefficient of d33 = 126, 148 m/V were measured versus the minimum coercive field of Ec = 50, 20 kV/cm for the PZT/PZT and PZT/BiT thick films, respectively. The thick film piezo-sensors are developed to be potentially used at frequency bandwidth of 1–5 MHz for rotary structural health monitoring and also in other industrial or medical applications as a transceiver.
关键词： piezoelectric sensor,structural health monitoring,PZT/BiT,composite,characterization,sol-gel PMOD deposition,infiltration,aerospace structure,PZT/PZT,thick film
更新于2025-09-23 15:22:29
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Effect of grain size and temperature on DC electrical conductivity of tin oxide nanoparticles synthesized by gel combustion method
摘要： Tin oxide (SnO2) nanomaterials of different grain size have been prepared using gel combustion method by varying the fuel (C6H8O7) to oxidizer (HNO3) molar ratio as a process parameter. The prepared samples were characterized by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Energy Dispersive Analysis X-ray Spectroscope (EDAX). The XRD patterns showed the formation of single phase Tetragonal rutile structure. The average particle size is found to be in the range of 19–34 nm. SEM images show high porosity in the material. The DC electrical conductivity of SnO2 thick film increases with the temperature significantly from 308K to 670K. The DC electrical conductivity of SnO2 thick film decreases with decrease in grain size due to the effect of surface to volume ratio while activation energy increases with decrease of grain size.
关键词： Thick film,Tin oxide,Activation energy,DC conductivity,Combustion synthesis
更新于2025-09-23 15:22:29
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Development of Dissolution Inhibitor in Chemically Amplified Positive Tone Thick Film Resist
摘要： Thick film resist is applied to a template for microelectrode used in semiconductor device integration. Utilization of positive type resist in chemically amplified system for thick film is expected to improve production efficiency of semiconductor device integration, but improvement of resolution is required. In order to improve the resolution of chemically amplified positive tone thick film resist, chemical structure of the dissolution inhibitor (DI) was designed for the control of solubility in resist polymer. The increase of molecular size in DI improved the dissolution inhibiting ability for the resist polymer in the unexposed area and the high acidity of the deprotected DI having carboxyl group improved dissolution promoting ability for the resist polymer in the exposed area. The resist containing DI possessing a large molecular size and high acidity improved its sensitivity and resolution.
关键词： Positive tone resist,Chemically amplified system,Thick film resist,Dissolution inhibitor
更新于2025-09-23 15:21:21
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Significantly enhanced electron transport of nonfullerene acceptor in blend film with high hole mobility polymer of high molecular weight: thick-film nonfullerene polymer solar cells showing high fill factor
摘要： Overcoming fill factor (FF) decay in thick fullerene active layers has been demonstrated with high hole mobility (μh) polymers. However, this issue remains as a challenge for thick active layers with nonfullerene acceptors. Here we demonstrate high FF and highly efficient nonfullerene based thick active layer with high μh polymer as the donor. Its relatively balanced hole and electron transports with a μh/μe ratio of 4.42 in 320 nm thick blend film are realized by the high molecular weight polymer induced higher electron mobility (μe approaching 1×10?3 cm2/(V s)) for the blend film. Relative to the pristine IEICO-4F nonfullerene film, 8 times increased μe for the blend film corresponds to closer interdigitation of IEICO-4F lamella and higher order face-on orientation of in-plain (200) peak of IEICO-4F molecules, which are very helpful for electron transport. As a result, solar cells with 320 nm thick binary nonfullerene active layers show outstanding FF over 70% and power conversion efficiency of 13.2%, a breakthrough for a high μh polymer as the donor. Our results suggest that high μh polymer donors are promising candidates for nonfullerene based polymer solar cells.
关键词： nonfullerene acceptor,thick-film polymer solar cells,fill factor,electron transport,high hole mobility polymer
更新于2025-09-23 15:21:01
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Parameter Studies of Ceramic MEMS Microhotplates Fabricated by Laser Micromilling Technology
摘要： This paper presents a modeling of technology aspects for fabrication ceramic microelectromechanical systems (MEMS) microhotplate and surface mounting device (SMD) packaging for (MOX) gas sensors applications. Innovative claims include: demonstration of flexible opportunities for new fabrication process flows based on laser micromilling tech; modeling of power consumption MEMS microhotplate depending on the thickness and topology; demonstration of necessity changing thick film technology of metallization to vacuum sputtering by reducing of power consumption. The results show possibility to fast fabrication of different topologies for ceramic MEMS microhotplate in form-factor of SOT-23 type SMD package.
关键词： thick film technology,modeling,microhotplate,MEMS,ceramic
更新于2025-09-23 15:19:57
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Effects of a Fluorinated Donor Polymer on the Morphology, Photophysics, and Performance of All-Polymer Solar Cells based on Naphthalene Diimide-Arylene Copolymer Acceptors
摘要： Naphthalene diimide (NDI)-biselenophene copolymer (PNDIBS) and NDI-selenophene copolymer (PNDIS) and the fluorinated donor polymer PM6 were used to investigate how a fluorinated polymer component affects the morphology and performance of all-polymer solar cells (all-PSCs). Although the PM6:PNDIBS blend system exhibits a high open-circuit voltage (Voc = 0.925 V) and desired low optical bandgap energy loss (Eloss = 0.475 eV), the overall power conversion efficiency (PCE) was 3.1%. In contrast, PM6:PNDIS blends combine a high Voc (0.967 V) with a high fill factor (FF = 0.70) to produce efficient all-PSCs with 9.1% PCE. Furthermore, the high performance PM6:PNDIS all-PSCs could be fabricated by various solution processing approaches and at active layer thickness as high as 300 nm without compromising photovoltaic efficiency. The divergent photovoltaic properties of PNDIS and PNDIBS when paired respectively with PM6 are shown to originate from the starkly different blend morphology and blend photophysics. Efficient PM6:PNDIS blend films were found to exhibit a vertical phase stratification along with lateral phase separation while the molecular packing had a predominant face-on orientation. Bulk lateral phase separation with both face-on and edge-on molecular orientations featured in the poor performing PM6:PNDIBS blend films. Enhanced charge photogeneration and suppressed geminate and bimolecular recombinations with 99% charge collection probability found in PM6:PNDIS blends strongly differ from the poor charge collection probability (66%) and high electron-hole pair recombination seen in PM6:PNDIBS. Our findings demonstrate that beyond the generally expected enhancement of Voc, a fluorinated polymer component in all-PSCs can also exert a positive or negative influence on photovoltaic performance via the blend morphology and blend photophysics.
关键词： Naphthalene Diimide-Arylene Copolymer,Fluorinated donor polymer,Vertical phase stratification,All-polymer solar cells,Thick-film active layer,Blend Morphology
更新于2025-09-23 15:19:57
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Processing Friendly Slot-die Cast Non-Fullerene Organic Solar Cells with Optimized Morphology
摘要： The power conversion efficiencies (PCEs) of spin-coated organic solar cells (OSCs) have increased rapidly in recent years. However, spin-coating shows poor reproducibility for large-scale production. Slot-die coating, a lab-scale version of roll-to-roll fabrication, has been considered as the most suitable technique for the production of future large-area commercial devices. For this, highly efficient slot-die fabricated devices are required to approach the performance of spin cast OSCs. We present here, a non-fullerene OSC device utilizing PBDB-T:i-IEICO-4F blend, fabricated by slot-die coating without post treatment in the ambient conditions. Device showed an impressive PCE of 12.5%, which is one of the highest reported performance for slot-die coated OSC devices. Compared to spin-coated and blade-coated films with optimized thermal annealing time, the films fabricated by slot-die coating (without any treatment) exhibit not only the highest degree of crystallinity and face-on orientation, but also the smallest domain size and the purest phase, towards enhanced and balanced carrier mobilities. An enhanced excited state charge generation has been attributed from transient charge kinetics using ultrafast spectroscopic signatures. Optimized slot-die coated devices exhibit excellent tolerance for increased thickness of photoactive layer, attributing to favorable molecular packing. We used slot-die coating as one simple fabrication technique, being capable of yielding highly efficient OSCs.
关键词： processing friendly,high efficiency,slot-die coating,organic solar cells,thick film
更新于2025-09-19 17:13:59
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High Performance Thick‐Film Nonfullerene Organic Solar Cells with Efficiency over 10% and Active Layer Thickness of 600 nm
摘要： Developing efficient organic solar cells (OSCs) with relatively thick active layer compatible with the roll to roll large area printing process is an inevitable requirement for the commercialization of this field. However, typical laboratory OSCs generally exhibit active layers with optimized thickness around 100 nm and very low thickness tolerance, which cannot be suitable for roll to roll process. In this work, high performance of thick-film organic solar cells employing a nonfullerene acceptor F–2Cl and a polymer donor PM6 is demonstrated. High power conversion efficiencies (PCEs) of 13.80% in the inverted structure device and 12.83% in the conventional structure device are achieved under optimized conditions. PCE of 9.03% is obtained for the inverted device with active layer thickness of 500 nm. It is worth noting that the conventional structure device still maintains the PCE of over 10% when the film thickness of the active layer is 600 nm, which is the highest value for the NF-OSCs with such a large active layer thickness. It is found that the performance difference between the thick active layer films based conventional and inverted devices is attributed to their different vertical phase separation in the active layers.
关键词： halogenation,thick-film organic solar cells,nonfullerene acceptors
更新于2025-09-11 14:15:04
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Surpassing the 10% efficiency milestone for 1-cm2 all-polymer solar cells
摘要： Naphthalenediimide-based n-type polymeric semiconductors are extensively used for constructing high-performance all-polymer solar cells (all-PSCs). For such all-polymer systems, charge recombination can be reduced by using thinner active layers, yet suffering insufficient near-infrared light harvesting from the polymeric acceptor. Conversely, increasing the layer thickness overcomes the light harvesting issue, but at the cost of severe charge recombination effects. Here we demonstrate that to manage light propagation within all-PSCs, a thick bulk-heterojunction film of approximately 350 nm is needed to effectively enhance photo-harvesting in the near-infrared region. To overcome the severe charge recombination in such a thick film, a non-halogenic additive is used to induce a well-ordered micro-structure that inherently suppresses recombination loss. The combined strategies of light management and delicate morphology optimization lead to a promising efficiency over 10% for thick-film all-PSCs with active area of 1 cm2, showing great promise for future large-scale production and application of all-PSCs.
关键词： all-polymer solar cells,light management,naphthalenediimide,thick-film,morphology optimization
更新于2025-09-11 14:15:04