研究目的
Investigating the performance of polycrystalline GaN based metal-semiconductor-metal (MSM) photodetector with different contacts (Al, ITO, Ni, and Pt) in terms of electrical resistivity, signal-to-noise ratio, responsivity, internal quantum efficiency, and temporal responsivity.
研究成果
Ni contact demonstrated the best performance among the tested contacts for polycrystalline GaN based MSM photodetectors, attributed to the formation of NixO inclusions which reduced resistivity. The photodetectors showed extended cut-off wavelengths, making them suitable for wider UV range detection.
研究不足
The study is limited by the high resistivity observed in some contacts, which affects the photodetector's performance. The temporal response of the photodetectors is also relatively slow compared to some reported devices.
1：Experimental Design and Method Selection:
The study involved fabricating MSM photodetectors with different contacts (Al, ITO, Ni, Pt) on polycrystalline GaN layers deposited on sapphire substrates using e-beam evaporator followed by annealing in ammonia ambient. The contacts were deposited using RF-sputtering.
2：Sample Selection and Data Sources:
Polycrystalline GaN layers were used as the semiconductor material. The contacts were deposited on separate samples for comparison.
3：List of Experimental Equipment and Materials:
E-beam evaporator for GaN deposition, RF-sputtering for contact deposition, Xenon UV lamp for excitation, and various characterization tools including SEM, AFM, XRD, and EDX spectroscopy.
4：Experimental Procedures and Operational Workflow:
The GaN layer was deposited and annealed, followed by contact deposition and annealing. Electrical and optical characterizations were then performed.
5：Data Analysis Methods:
Electrical resistivity was derived from IV characteristics, SNR from the ratio of photo-current to dark-current, and internal quantum efficiency from responsivity measurements.
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