摘要： High power, efficient diode-laser bars with narrow far field angles are sought for many applications, for example in the 9xx nm-range for the pumping of Yb:YAG disc and slab lasers. In previous work, broad-area (BA) diode-laser bars with 4 mm resonator length operated with high conversion efficiency η = 62% at operating power Pop = 1 kW in quasi-continuous wave testing (200 μs, 10 Hz), by using low optical loss and low-resistivity vertical structures and high fill-factors (~70%). Lateral far field (95% power) was θ95% > 10°. However, higher η and narrower θ95% are needed for industrial application, and we seek improvements by altering the lateral bar structure for a fixed vertical design (from [1], wavelength λ = 930 nm, loss αi ≈ 0.4 cm-1). First, narrower θ95% at Pop = 1 kW was sought. In previous studies on 90 μm-wide single emitters, deep implantation through the active region was shown to reduce gain at the emitter edges, suppressing higher-order lateral modes, for smaller θ95%, at the price of reduced η and Pop. A similar implantation approach is assessed here in high fill-factor bars, and the drop in η is mitigated by reducing the implantation depth. Second, higher η at Pop = 1 kW was sought, by increasing the fill-factor, for lower electrical resistance.