研究目的
Investigating the potential for increasing the efficiency of GaInP/GaAs/Ge multi-junction solar cells by using quantum-size objects.
研究成果
The study demonstrated that optimized QWDs have a potential for increasing the efficiency of GaInP/GaAs/Ge SC from 29.8 to 30.8% (AM0, 1 sun) and from 41.6% to 43.1% (AM1.5D, 360 suns). QWDs optimally combine the increase in photocurrent and the voltage drop that they introduce into GaAs SCs, making them promising for improving the efficiency of modern industrial multi-junction SCs.
研究不足
The study is limited by the inability to extract subcells’ dark curves from the general characteristic of 3J SC, making it difficult to accurately calculate the efficiency of multi-junction SCs with QO based medium. Additionally, the increase in recombination through the QOs leads to an increase in saturation currents and a drop in the generated voltage.
1：Experimental Design and Method Selection:
The study involved growing single-junction GaAs p-i-n SCs with various quantum-sized objects (QOs) inserted in the middle of a 1000 nm-thick i-GaAs region. The QOs included In
2：2Ga8As quantum wells, In4Ga6As quantum well-dots (QWDs), In8Ga2As and InAs quantum dots. A reference SC without QOs was also created. Sample Selection and Data Sources:
The structures were grown on n+-GaAs (100) substrates using a low pressure MOVPE reactor.
3：List of Experimental Equipment and Materials:
A pulsed solar simulator was used to measure IV curves.
4：Experimental Procedures and Operational Workflow:
The internal quantum efficiency (IQE) for SCs with various QOs was compared. The photocurrent increment and the reduction of open-circuit voltage were calculated using dark IV and spectral characteristics.
5：Data Analysis Methods:
An analytical model for estimating the efficiency of triple-junction SCs with quantum objects was described, using the current density (Jm) and voltage (Vm) in the optimal point for calculations.
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