1：Experimental Design and Method Selection:

The study used 200mm P(100) and N(100) Si wafers with ~100nm of undoped Ge-epilayer growth. The wafers received P-well or N-well implants followed by RTA annealing. Amorphizing Si, Sn and cluster-C implants at selected energies and E15-E16/cm2 doses were performed into the various Ge-epi P-well and N-well regions. The Ge-epi wafers received nano-sec laser annealing from sub-melt conditions for SPE to melt conditions for LPE at various power densities.

2：Sample Selection and Data Sources:

The samples were 200mm P(100) and N(100) Si wafers with ~100nm of undoped Ge-epilayer growth.

3：List of Experimental Equipment and Materials:

The equipment used includes a laser annealing system, 4-point probe for Rs measurement, ALProTM50 electrical depth profiler for DHEM technique, XRD for crystal quality and strain analysis, and SIMS for impurity depth analysis.

4：Experimental Procedures and Operational Workflow:

The wafers were implanted with P-well or N-well dopants, followed by RTA annealing. Group IV strain implantation was then performed, followed by nano-sec laser annealing. Rs was measured by 4-point probe, and mobility was calculated. DHEM technique was used for mobility depth profile measurement. XRD and SIMS were used for crystal quality and impurity depth analysis.

5：Data Analysis Methods:

The data was analyzed to determine the effects of group IV implants and laser annealing on Ge-epi mobility and crystal quality.