研究目的
Investigating the reduction of residual impurities in semi-polar (3031) and (2021) GaN grown by metalorganic vapor phase epitaxy for high-quality GaN drift layers in vertical devices.
研究成果
Semi-polar (3031) and (2021) GaN epitaxial layers exhibit low residual impurity concentrations and high optical quality, making them suitable for high-quality drift layers in vertical GaN devices. The reduction in impurities is attributed to the polar nature of the surfaces and step flow growth mode.
研究不足
The study is limited to specific semi-polar planes and growth conditions; carbon concentrations below SIMS detection limit require further evaluation by methods like minority carrier transient spectroscopy. The mechanism of impurity incorporation may not be fully generalizable to other crystal planes or growth methods.
1：Experimental Design and Method Selection:
Homo-epitaxial growth of GaN layers on semi-polar (3031) and (2021) substrates using metalorganic chemical vapor deposition (MOCVD) to study impurity incorporation and surface morphology.
2：Sample Selection and Data Sources:
Semi-polar (3031) and (2021) GaN substrates sliced from c-plane free-standing GaN ingots grown by hydride vapor phase epitaxy (HVPE), with threading dislocation densities less than 5 × 10^6 cm^-
3：List of Experimental Equipment and Materials:
MOCVD reactor (Taiyo Nippon Sanso SR4000), precursors (trimethylgallium, ammonia, diluted SiH4), atomic force microscopy (AFM, Hitachi 5100N), high-resolution X-ray diffraction (HRXRD, PAnalytical X-Pert Pro MRD), secondary-ion mass spectrometry (SIMS, Cameca Cs negative-ion beams), photoluminescence (PL) system (Horiba LabRAM-HR with He-Cd laser).
4：Experimental Procedures and Operational Workflow:
Growth temperature varied from 1000°C to 1080°C, fixed growth rate (
5：0 μm/h), V/III ratio (1000), and pressure (101 kPa). Surface morphology characterized by AFM, crystal quality by HRXRD, impurity concentrations by SIMS, and optical properties by PL at room temperature and 10K. Data Analysis Methods:
Analysis of RMS values from AFM, FWHM from HRXRD, impurity concentrations from SIMS, and peak identification from PL spectra.
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