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Performance-Enhancing Selector via Symmetrical Multilayer Design
摘要： Two-terminal selectors with high nonlinearity, based on bidirectional threshold switching (TS) behaviors, are considered as a crucial element of crossbar integration for emerging nonvolatile memory and neuromorphic network. Although great efforts have been made to obtain various selectors, existing selectors cannot fully satisfy the rigorous standard of assorted memristive elements and it is in great demand to enhance the performance. Here, a new type of Ag/TaOx/TaOy/TaOx/Ag (x < y) selector based on homogeneous trilayered oxides is developed to attain the required parameters including bidirectional TS operation, a large selectivity of ≈1010, a high compliance current up to 1 mA, and ultralow switching voltages under 0.2 V. Tunable operation voltages can be realized by modulating the thickness of inserted TaOy. All-TaOx-based integrated 1S1R (one selector and one memristor) cells, prepared completely by magnetron sputtering and no need of a middle electrode, exhibit a nonlinear feature, which is quite characteristic for the crossbar devices, avoiding undesired crosstalk current issues. The tantalum-oxide-based homojunctions offer high insulation, low ion mobility, and rich interfaces, which is responsible for the modulation of Ag conductive filaments and corresponding high-performance cation-based selector. These findings might advance practical implementation of two-terminal selectors in emerging memories, especially resistive random access memories.
关键词： conductive filaments,1S1R,multilayers,threshold switching,TaOx,selector
更新于2025-09-23 15:23:52
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Transmission Electron Microscopy Study of UV-ozone Cleaned Silicon Surfaces for Application in High Efficiency Photovoltaics
摘要： We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a ?eld-assisted superlinear threshold selector. The selector offers high selectivity of >107, sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125 °C, and endurance of >1011. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <10 pA while offering >102 memory ON/ OFF ratio and >106 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.
关键词： selectivity,cross-point memory,select device,resistive random access memory (RRAM),sneak path,1S1R
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - High Phosphorus-doped Seed Layer in Microcrystalline Silicon Oxide Front Contact Layers for Silicon Heterojunction Solar Cells
摘要： We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of >107, sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125 °C, and endurance of >1011. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <10 pA while offering >102 memory ON/OFF ratio and >106 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.
关键词： sneak path,cross-point memory,select device,resistive random access memory (RRAM),1S1R,selectivity
更新于2025-09-23 15:19:57
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Hybrid III-Nitride Tunnel Junctions for Low Excess Voltage Blue LEDs and UVC LEDs
摘要： We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a ?eld-assisted superlinear threshold selector. The selector offers high selectivity of >107, sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125 °C, and endurance of >1011. Furthermore, we demonstrate 1S1R integration in which the selector-subthreshold current is <10 pA while offering >102 memory ON/ OFF ratio and >106 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.
关键词： sneak path,cross-point memory,select device,resistive random access memory (RRAM),1S1R,selectivity
更新于2025-09-16 10:30:52