- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Impact of Temperature Dependent Hydration Water on Perovskite Solar Cells
摘要： Water effect on perovskite solar cells has received growing interest in recent years. A widely accepted view is that moderate water content induces the formation of hydrate phase which enhances the recrystallization of the perovskite. However, the underlying factors which influence the formation of hydrate phase have yet to be investigated. Herein, by controlling the annealing temperature, it is demonstrated that 60 ℃ is the most suitable temperature for the formation of hydrated perovskite. After further annealing at 120 ℃, the resulting perovskite film reveals enhanced crystallinity with a more uniform morphology, contributing to device efficiency above 20%. In addition, the water effect on different types of perovskites is studied and it is concluded that the formation of hydrated perovskite is mainly determined by the cations of the perovskite itself. The findings in this work elucidate the conditions for the formation of hydrated perovskite, contributing to the fabrication of highly efficient perovskite solar cells.
关键词： annealing temperature,perovskite solar cell,cation,water effect
更新于2025-09-11 14:15:04
-
AIP Conference Proceedings [AIP Publishing THE 7TH INTERNATIONAL CONFERENCE ON APPLIED SCIENCE AND TECHNOLOGY (ICAST 2019) - Karbala City, Iraq (27–28 March 2019)] THE 7TH INTERNATIONAL CONFERENCE ON APPLIED SCIENCE AND TECHNOLOGY (ICAST 2019) - Structure, morphology and optical properties of thermally evaporated Cu2S thin films annealed at different temperatures
摘要： In the present work the preparation of Cu2S alloy was done throughout mixing the sulphur and copper elements according to the proper atomic weight and then put in an evacuated quartz ampoule which then sealed and heated at 1273 K for five hours and left to cool. Thin films from Cu2S powder thicknesses of ~300nm were prepared by thermal evaporation technique on a glass substrate and under vacuum of 10-5 mbar with rate of deposition 25nm/sec. The prepared thin films subjected to heat treatment at different temperatures(300, 373 , 473 and 573 K)for half an hour. The structures of Cu2S powder and films have been studied by X–ray diffraction technique. The result reveals that the prepared alloy has cubic structure and coincides with slandered cards while the prepared thin films have amorphous structure. The optical measurement shows that the Cu2S films have direct and indirect energy gap energy gap (Eg opt) for allowed transition. The energy gap (Eg opt) increases slightly with the increase annealing temperature and retune to increase with further increases of annealing temperature. The energy gap (Eg opt) increases from 2.55 to 2.6 eV and then decreases. The transmittance and optical constants such as refractive index (n), extinction coefficient (k) and dielectric constant (εr, εi) have been calculated. The optical constants decrease in the first and then return to increase with annealing temperature.
关键词： Cu2S thin films,optical properties,structural morphology,thermal evaporation,annealing temperature
更新于2025-09-11 14:15:04
-
Surface Treatment on Nickel Oxide to Enhance the Efficiency of Inverted Perovskite Solar Cells
摘要： The organic-inorganic hybrid perovskites such as CH3NH3PbI3 have been considered as one of the most promising candidates for the next-generation photovoltaic materials due to its high absorption coefficient, low exciton binding energy, and long diffusion length. Herein, we have chosen NiOx as the hole transport material because metal oxides exhibit robust properties in air. We synthesized the NiOx film by a common sol-gel method. It is found that high-temperature annealing (500°C) is required to ensure the perovskite solar cell (PSC) with an efficiency over 15%. Low-temperature annealing (100°C) cannot convert the precursor materials to fully covered NiOx film, while the PSC based on mediate-temperature annealing (300°C) NiOx has larger resistance and thus lower efficiency. Fortunately, we have found that UV-ozone treatment on the NiOx film can reduce the resistance of the device based on 300°C annealed NiOx. The champion device can reach 16% efficiency with UV-ozone-treated 300°C annealed NiOx. This work has made it possible to reduce the annealing temperature of the sol-gel NiOx for high-efficiency PSCs, and it is believed that this simple surface treatment can be further employed in other metal oxide-based optoelectronic devices.
关键词： perovskite solar cells,NiOx,annealing temperature,sol-gel method,UV-ozone treatment
更新于2025-09-11 14:15:04
-
Morphological Modification and Analysis of ZnO Nanorods and Their Optical Properties and Polarization
摘要： We report on the effect of the morphological modification on optical properties and polarization of ZnO nanorods (NR). Here, the morphology and structure of the ZnO NR were modified by introducing different annealing temperatures. The increase of length and diameter and change in density of the ZnO NR were clearly observed by increasing the annealing temperature. We found that the samples show different oxygen vacancy (VO) and zinc interstitial (ZnI) concentrations. We suggest that the different concentrations of VO and ZnI are originated from morphological and structural modification. Our results reveal that optical absorption and polarization of ZnO NR could be enhanced by producing a high concentration of VO and ZnI. The modification of VO and ZnI promotes a decrease in the band gap and coexistence of high optical absorption and polarization in our ZnO NR. Our findings would give a broad insight into the morphological modification and characterization technique on ZnO NR. The high optical and polarization characteristics of ZnO NR are potential for developing the high-performance nanogenerator device for multitype energy harvesting.
关键词： optical properties,polarization,annealing temperature,ZnO nanorods,morphological modification
更新于2025-09-11 14:15:04
-
Thermal oxidation effects on physical properties of CuO<sub>2</sub> thin films for optoelectronic application
摘要： In this research, high quality copper dioxide (Cu2O) and copper oxide (CuO) thin films have been prepared using RF sputtering method under ranges of annealing temperatures. The results showed that high transparent samples along with the transparency values increases from 48% to 68%. At low annealing temperature, however, optical properties drops sharply. It has been found that the value of energy band-gap were 2.35eV – 2.62eV as the annealing temperature increases. Further, SEM and X-Ray Diffraction techniques were used to measure and investigate the surface morphology and the homogeneity of Cu2O and CuO thin films, respectively.
关键词： Annealing temperature,Sol RF sputtering.,copper dioxide,thin film
更新于2025-09-10 09:29:36
-
Double active layer InZnO:N/InZnSnO thin film transistors with high mobility at low annealing temperature
摘要： In this paper, bottom-gate top-contact thin film transistors (TFTs) with a double active layer of InZnO:N/InZnSnO (IZO:N/IZTO) were successfully prepared. The IZO:N/IZTO thin films were deposited on SiO2/p-Si substrates by radio frequency (RF) magnetron sputtering at room temperature. The transmittance of both the IZO:N thin film and the IZTO thin film were more than 80% in the range of visible light. The IZO:N thin film and the IZTO thin film were found to be amorphous at the annealing temperature of 325?°C by means of X-ray diffraction (XRD). The double active layer IZO:N/IZTO TFT exhibited good electrical performance with a saturation mobility of 41.5?cm2?V?1?s?1, an on/off current ratio of 2.88 × 105, and a threshold voltage of 1.0?V, which achieved high mobility at the low annealing temperature of 325?°C.
关键词： low annealing temperature,RF magnetron sputtering,high mobility,InZnO:N/InZnSnO,thin film transistors
更新于2025-09-09 09:28:46
-
Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films
摘要： This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si (100) and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of (002) crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.
关键词： ZnO,Annealing Temperature,Thin Films,Optical Properties,RF Sputtering,Structural Properties
更新于2025-09-09 09:28:46
-
Study of Annealing Influence on Basic Properties of Indium Tin Oxide Nanorod Films Deposited Using Glancing Angle Ion-Assisted Electron Beam Evaporation
摘要： Indium tin oxide (ITO) nanorod ?lms were deposited onto glass slides and Si wafers using ion-assisted electron beam evaporation with a glancing angle deposition technique. The annealing in?uence on the basic properties of the as-deposited ITO nanorod ?lms was studied in the range of 100–500 °C for two hours in air. The crystallinity of the ITO nanorod ?lms was enhanced with the increasing annealing temperature, and the average transmission of the as-deposited ITO nanorod ?lms in the visible range was 90%. This value did not change signi?cantly after the annealing process. The optical bandgap of the as-deposited ITO nanorod ?lms was 3.94 eV and increased slightly after annealing. The sheet resistance of the as-deposited ITO nanorod ?lms was 12.9 Ω/□ and increased to 57.8 Ω/□ at an annealing temperature of 500 °C. The as-deposited ITO nanorod ?lms showed nanorod structures with average diameters of 79 nm, which changed slightly with the annealing temperature. The root mean square roughness of the as-deposited ITO nanorod ?lms was 7.9 nm and changed slightly with annealing. The as-deposited ITO nanorod ?lms had an average contact angle of 110.9°, which decreased to 64.2° at an annealing temperature of 500 °C. The experimental results showed that varying the annealing temperature in?uenced the structural, electrical and wettability properties of the ITO nanorod ?lms while the optical properties and surface morphology were almost unaffected.
关键词： Physical Properties,Annealing Temperature,Glancing-Angle Ion-Assisted Electron-Beam Evaporation,ITO Nanorod Films
更新于2025-09-09 09:28:46
-
PH SENSITIVITY DEPENDENCY ON THE ANNEALING TEMPERATURE OF SPIN-COATED TITANIUM DIOXIDE THIN FILMS
摘要： Titanium dioxide (TiO2) thin films were fabricated on indium tin oxide (ITO) glass substrates using the spin coating technique and further were implemented as sensing membranes of the extended gate field effect transistor (EGFET) based pH sensor. The as-deposited thin films were annealed at different temperatures from 200 - 600 °C in room ambient for 20 min. The effects of different annealing temperatures on electrical and crystalline properties were analyzed by I-V two point probes measurement and X-ray diffraction respectively. Meanwhile, the surface morphology of thin films was observed by field emission scanning electron microscope (FESEM). We then measured the transfer characteristics (ID-VG) of the TiO2/ITO sensing membrane using a semiconductor parametric device analyzer for sensor characterization. It was found that, TiO2/ITO sensing membrane annealed at 300 °C achieved higher sensitivity and good linearity of 51.48 mV/pH and 0.99415, respectively in the pH buffer solutions of 4, 7, 10, and 12. Thin film annealed at 300 °C gives higher conductivity thin film of 384.62 S/m. We found that the conductivity of TiO2/ITO thin films was proportional with the sensitivity of sensing membrane.
关键词： titanium dioxide,Annealing temperature,sol-gel spin coating,extended gate field effect transistor
更新于2025-09-04 15:30:14