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Design of an intermediate Bragg reflector within triple-junction solar cells for spectrum splitting applications
摘要： We investigate the use of distributed Bragg reflectors (DBRs) within triple-junction solar cells (TJSC) for spectrum splitting photovoltaics. An optical model of a lattice-matched (LM) GaInP/GaInAs/Ge TJSC with intermediate DBR is developed, in good agreement with measured reflectance. By modifying the DBR layer number, composition and thickness to broaden the reflectance band, we show that a DBR can provide suitable 900–1050 nm reflectance for spectrum splitting from the LM TJSC to a Si cell, resulting in a more efficient 4-junction receiver. For better practicality and cost effectiveness, we propose that the buffer layers in metamorphic (MM) TJSCs could additionally function as a DBR for spectrum splitting applications. We propose several DBR designs to achieve a suitable spectrum-splitting reflectance band from MM TJSCs to a Si cell, again resulting in a more efficient 4-junction receiver. Finally, we show that our intermediate DBR approach to spectrum splitting has the advantage of a greatly reduced angle-of-incidence dependence compared to a discrete dielectric filter.
关键词： Triple-junction solar cell,Spectrum splitting,Buffer layers,Distributed Bragg reflector
更新于2025-10-22 19:40:53
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[IEEE 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Waikoloa Village, HI (2018.6.10-2018.6.15)] 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Design of Bragg Reflector in GaInP/GaInAs/Ge Triple-junction Solar Cells for Spectrum Splitting Applications
摘要： The use of intermediate distributed Bragg reflectors (DBRs) is investigated. Optical models for both commercial lattice-matched (LM) and metamorphic (MM) GaInP/GaInAs/Ge triple-junction solar cells (TJSCs) are developed, in good agreement with measured reflectance. Integrating a suitable DBR structure into a TJSC has the potential to provide the required IR reflectance for spectrum splitting from the LM and MM TJSC to a Si cell. We show that the intermediate DBR approach to spectrum splitting has the advantage of a greatly reduced angle-of-incidence dependence compared to a discrete dielectric filter.
关键词： Spectrum splitting,Buffer layers,Distributed Bragg reflector,Triple junction solar cell
更新于2025-10-22 19:40:53
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates
摘要： A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with limited thicknesses, but ease the appearance of cracks, as observed in previous designs grown on regular Si substrates. In this new design, a porous silicon layer has been incorporated close to the substrate surface. The ductility of this layer helps repress the propagation of cracks, diminishing the problems of low shunt resistance and thus improving solar cell performance. The first results of this new architecture are presented here.
关键词： tandem on silicon,porous silicon,reverse buffer layers,III-V on silicon,GaAsP/SiGe
更新于2025-09-23 15:21:01
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NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells
摘要： Recent research shows that the interface state in perovskite solar cells is the main factor which affects the stability and performance of the device, and interface engineering including strain engineering is an effective method to solve this issue. In this work, a CsBr buffer layer is inserted between NiOx hole transport layer and perovskite layer to relieve the lattice mismatch induced interface stress and induce more ordered crystal growth. The experimental and theoretical results show that the addition of the CsBr buffer layer optimizes the interface between the perovskite absorber layer and the NiOx hole transport layer, reduces interface defects and traps, and enhances the hole extraction/transfer. The experimental results show that the power conversion efficiency of optimal device reaches up to 19.7% which is significantly higher than the efficiency of the device without the CsBr buffer layer. Meanwhile, the device stability is also improved. This work provides a deep understanding of the NiOx/perovskite interface and provides a new strategy for interface optimization.
关键词： lattice mismatches,buffer layers,NiO,contact engineering,perovskite solar cells
更新于2025-09-23 15:21:01
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Reference Module in Materials Science and Materials Engineering || Organometallic Vapor Phase Epitaxial Growth of Group III Nitrides ☆
摘要： The III-nitrides of aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN) and their solid solutions form most commonly in the low-temperature wurtzite crystal structure shown in Fig. 1(a). Overall, this structure possesses a hexagonal unit cell with lattice constants c (o00014 axes) and a (o11204 axes). The atomic arrangement within this structure consists of two interpenetrating, closest packed metal and nitrogen lattices in which each atom of one type is bonded to four atoms of the other to form AB4 tetrahedra. The space group is P63mc.
关键词： GaN,OMVPE,Organometallic Vapor Phase Epitaxy,Group III Nitrides,Polarization,Dislocations,InN,Buffer Layers,AlN,Substrates
更新于2025-09-23 15:21:01
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Alternative buffer layers in Sb2Se3 thina??film solar cells to reduce opena??circuit voltage offset
摘要： Antimony Selenide (Sb2Se3) thin-film solar cell configurations with alternative buffer layers are proposed to improve the efficiency by minimizing open‐circuit voltage offset (Voc,offset). The conduction band offsets have been optimized not only at absorber/buffer (ΔEC‐BA) but also at buffer/transparent conductive oxide (ΔEC-TB). Voltage‐independent recombination rates in the quasi‐neutral region (Rb0), and at the absorber/buffer interface (Ri0) of the Sb2Se3 solar cells with various configurations are individually modelled. The development of cell configurations causes to decrease the Ri0, and Rb0, consequently reducing the Voc,offset. It is found that the solar cell configuration of Mo/MoSe2/Sb2Se3/TiO2/ZnO0.4S0.6/Zn0.93Mg0.07O/ZnO:Al is suitable with the ΔEC‐BA of 0.29 eV and ΔEC‐TB of ?0.2 eV, therefore considerably reducing Voc,offset to approximately 0.52 V, and improving the efficiency to 15.46%.
关键词： Recombination rate,Sb2Se3,Open‐circuit voltage offset,Device configuration,Alternative buffer layers
更新于2025-09-23 15:21:01
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Hybrid chemical bath deposition-CdS/sputter-Zn(O,S) alternative buffer for Cu <sub/>2</sub> ZnSn(S,Se) <sub/>4</sub> based solar cells
摘要： To replace the conventionally used CdS buffers in Cu2ZnSn(S,Se)4 (CZTSSe) based thin-film solar cells, sputtered Zn(O,S) buffer layers have been investigated. Zn(O,S) layers with three different [O]/([O] + [S]) ratios (0.4, 0.7, and 0.8)—and a combination of Zn(O,S) and CdS (“hybrid buffer layer”) were studied. In comparison to the CdS reference, the external quantum efficiency (EQE) of the Zn(O,S)-buffered devices increases in the short- and long-wavelength regions of the spectrum. However, the average EQE ranges below that of the CdS reference, and the devices show a low open-circuit voltage (VOC). By adding a very thin CdS layer (5 nm) between the absorber and the Zn(O,S) buffer, the VOC loss is completely avoided. Using thicker intermediate CdS layers result in a further device improvement, with VOC values above those of the CdS reference. X-ray photoelectron spectroscopy (XPS) measurements suggest that the thin CdS layer prevents damage to the absorber surface during the sputter deposition of the Zn(O,S) buffer. With the hybrid buffer configuration, a record VOC deficit, i.e., a minimum difference between bandgap energy Eg (divided by the elementary charge q) and VOC (Eg/q – VOC) of 519 mV could be obtained, i.e., the lowest value reported for kesterite solar cells to date. Thus, the hybrid buffer configuration is a promising approach to overcome one of the main bottlenecks of kesterite-based solar cells, while simultaneously also reducing the amount of cadmium needed in the device.
关键词： VOC deficit,Cu2ZnSn(S,Se)4,CdS,hybrid buffer layer,open-circuit voltage,X-ray photoelectron spectroscopy,thin-film solar cells,Zn(O,S) buffer layers,external quantum efficiency
更新于2025-09-23 15:19:57
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High voltage vacuum-processed perovskite solar cells with organic semiconducting interlayers
摘要： In perovskite solar cells, the choice of appropriate transport layers and electrodes is of great importance to guarantee efficient charge transport and collection, minimizing recombination losses. The possibility to sequentially process multiple layers by vacuum methods offers a tool to explore the effects of different materials and their combinations on the performance of optoelectronic devices. In this work, the effect of introducing interlayers and altering the electrode work function has been evaluated in fully vacuum-deposited perovskite solar cells. We compared the performance of solar cells employing common electron buffer layers such as bathocuproine (BCP), with other injection materials used in organic light-emitting diodes, such as lithium quinolate (Liq), as well as their combination. Additionally, high voltage solar cells were obtained using low work function metal electrodes, although with compromised stability. Solar cells with enhanced photovoltage and stability under continuous operation were obtained using BCP and BCP/Liq interlayers, resulting in an efficiency of approximately 19%, which is remarkable for simple methylammonium lead iodide absorbers.
关键词： stability,perovskite solar cells,bathocuproine,interlayers,electron buffer layers,photovoltage,vacuum-deposited,organic light-emitting diodes,lithium quinolate
更新于2025-09-23 15:19:57
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Influence of the modification of annealing parameters on solution-processed metal oxide ETL buffer layers, and a comparative study of spin-coated and thermally evaporated MoOx HTL for use in an inverted polymer solar cell
摘要： Transparent metal oxide thin films were synthesized on indium tin oxide (ITO) substrates via the sol-gel spin coating method using various precursor solutions. The types of metal oxides investigated were zinc oxide (ZnO), titanium dioxide (TiO2) and molybdenum oxide (MoOx) whose purpose was to serve as buffer layers in organic solar cells. ZnO and TiO2 layers were to serve as electron transport layers (ETL), and the MoOx layer served as a hole transport layer (HTL). Compared to conventional ordering, in this set-up, the sequence of the buffer layers is inverted to improve the stability of the polymer solar cells. The annealing temperature during the preparation of the ETL metal oxide layers was varied in order to investigate the effect on the morphological properties of the thin films. The HTL layer was both spin-coated and thermally evaporated and the results were compared. The surface morphology and elemental analysis of the prepared samples were studied using a scanning electron microscope (SEM) equipped with energy dispersive spectroscopy (EDS) capability. The optical properties were investigated by UV–Vis spectroscopy and it was found that the metal oxide layers have high optical transparency in the visible range, as required. The crystal structures of the prepared metal oxides were investigated by X-ray diffraction (XRD). A comparative study on the effect of the ETLs individually in solar cells was done by incorporating them individually with active layers of blends of poly (3-hexylthiophene) (P3HT), as electron donor and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as electron acceptor respectively. The device performance was subsequently measured and compared.
关键词： Metal oxide,Sol-gel,Buffer layers,Spin coating,Solar cell,Organic
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Electroreflectance studies of Zn(O,S) buffer layers in Cu(In,Ga)Se <sub/>2</sub> solar cells: Bandgap energies and secondary phases
摘要： Solution-grown Zn(O,S) buffer layers in Cu(In,Ga)Se2 (CIGS) solar cells are investigated by angle-resolved electroreflectance (ER) spectroscopy. We demonstrate that ER can be used directly to measure the bandgap energy of very thin Zn(O,S) buffer layers in the device. Furthermore, ER measurements on CIGS solar cells with different gallium concentrations before and after thermal annealing (TA) were conducted and show no significant influence of the gallium concentration and TA on the buffer’s bandgap energy, as determined in the range of 2.8 – 2.9 eV. Moreover, some ER spectra exhibit an additional contribution at 2.3 eV. This finding can be ascribed to a secondary phase at the interface between CIGS absorber and Zn(O,S) buffer layer.
关键词： S) buffer layers,Zn(O,Cu(In,Ga)Se2 solar cells,secondary phases,electroreflectance spectroscopy,bandgap energies
更新于2025-09-19 17:13:59