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Conductive Fused Porphyrin Tapes on Sensitive Substrates by a Chemical Vapor Deposition Approach
摘要： Oxidative polymerization of nickel(II) 5,15-diphenyl porphyrin and nickel(II) 5,15-bis(di-3,5-tert-butylphenyl) porphyrin by an oxidative chemical vapor deposition (oCVD) approach yields multiply fused porphyrin oligomers in thin film form. The oCVD technique enables the formation, deposition and p-doping of conjugated poly(porphyrins) coatings in a single step without the use of solvents or post-treatments. The decisive reactions and side reactions during the oCVD process are evidenced by high-resolution mass spectrometry. Due to the highly conjugated structure of the fused porphyrin tapes the thin films exhibit an electrical conductivity of 3.6×10–2 S·cm–1 and strong absorption in the visible to near-infrared spectral region. The formation of smooth conjugated poly(porphyrins) thin films, even on sensitive substrates, is demonstrated by their successful deposition and patterning on glass, silicon and printer paper. The ability to form conductive poly(porphyrins) thin films could enable the design of a new category of optoelectronic devices using the oCVD approach.
关键词： Chemical Vapor Deposition,Polymerization,Oxidative Coupling,Porphyrins,Thin Films
更新于2025-09-23 15:22:29
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Design and Operation of an Optically-Accessible Modular Reactor for Diagnostics of Thermal Thin Film Deposition Processes
摘要： The design and operation of a simple, optically-accessible modular reactor for probing thermal thin film deposition processes, such as atomic layer deposition processes (ALD) and chemical vapor deposition (CVD), is described. This reactor has a nominal footprint of 225 cm2 and a mass of approximately 6.6 kg, making it small enough to conveniently function as a modular component of an optical train. The design is simple, making fabrication straightforward and relatively inexpensive. Reactor operation is characterized using two infrared absorption measurements to determine exhaust times for tetrakis(dimethylamino)titanium and water, proto-typical ALD precursors, in a pressure and flow regime commonly used for ALD.
关键词： ALD,atomic layer deposition,in situ,reactor,diagnostics,chemical vapor deposition,CVD,optical cell
更新于2025-09-23 15:21:21
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Crosslinked Organosilicon-Acrylate Copolymer Moisture Barrier Thin Film Fabricated by Initiated Chemical Vapor Deposition (iCVD)
摘要： Crosslinked organosilicon-acrylate copolymer thin film with desired chemical composition was successfully fabricated by a simply modified initiated chemical vapor deposition (iCVD) process. Unlike the conventional iCVD copolymerization process, in our novel process, comonomers were injected together as one gas phase into the polymerization chamber from miscible liquid comonomer mixture. 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4) and cyclohexyl methacrylate (CHMA) were used as the comonomers and tert-butyl peroxide was used as the initiator. From Fourier transform infrared (FTIR) spectra and solvent resistance test, we clearly confirmed that the crosslinked copolymer thin film with desired chemical composition could be obtained by controlling only the mixing ratio of liquid comonomers. It is expected that crosslinkable V4D4 organosilicon moiety provides hydrophobic moisture barrier property and CHMA acrylate moiety provides mechanical flexibility and better adhesion. We observed a certain level of moisture blocking capability of the copolymer thin film, implying potential application of the crosslinked organosilicon-acrylate copolymer thin film as flexible polymer buffer layer in organic/inorganic or metal oxide hybrid moisture barrier for flexible display or electronic devices.
关键词： moisture barrier property,copolymer thin film,initiated chemical vapor deposition (iCVD),cyclohexyl methacrylate (CHMA),2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4)
更新于2025-09-23 15:21:21
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Selective Transfer of Rotationally Commensurate MoS <sub/>2</sub> from an Epitaxially Grown van der Waals Heterostructure
摘要： Large-scale synthesis of high quality two-dimensional (2D) semiconductors are critical for their incorporation in emerging electronic and optoelectronic technologies. In particular, chemical vapor deposition (CVD) of transition metal dichalcogenides (TMDs) via van der Waals epitaxy on epitaxial graphene (EG) leads to rotationally commensurate TMDs in contrast to randomly aligned TMDs grown on amorphous oxide substrates. However, the interlayer coupling between TMDs and EG hinders the investigation and utilization of the intrinsic electronic properties of the resulting TMDs, thus requiring their isolation from the EG growth substrate. To address this issue, we report here a technique for selectively transferring monolayer molybdenum disulfide (MoS2) from CVD-grown MoS2-EG van der Waals heterojunctions using copper (Cu) adhesion layers. The choice of Cu as the adhesion layer is motivated by density functional theory calculations that predict the preferential binding of monolayer MoS2 to Cu in contrast to graphene. Atomic force microscopy and optical spectroscopy confirm the large-scale transfer of rotationally commensurate MoS2 onto SiO2/Si substrates without cracks, wrinkles, or residues. Furthermore, the transferred MoS2 shows high performance in field-effect transistors with mobilities up to 30 cm2/Vs and on/off ratios up to 106 at room temperature. This transfer technique can likely be generalized to other TMDs and related 2D materials grown on EG, thus offering a broad range of benefits in nanoelectronic, optoelectronic, and photonic applications.
关键词： molybdenum disulfide,van der Waals epitaxy,two-dimensional semiconductors,field-effect transistors,copper adhesion layers,transition metal dichalcogenides,chemical vapor deposition
更新于2025-09-23 15:21:21
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Transparent Conductive Materials (Materials, Synthesis, Characterization, Applications) || Graphene
摘要： Graphene regards to a monolayer of carbon atoms arranged in a ?at two-dimensional (2D) honeycomb lattice. It belongs to the family of carbon nanostructures that have won two Nobel Prizes and have been the focus of intensive research and development in the past few decades with well-known members including zero-dimensional (0D) fullerenes (or bucky-balls), one-dimensional (1D) carbon nanotubes, and three-dimensional (3D) graphite as illustrated in Figure 3.2.1. Since its discovery in 2004, graphene has attracted enormous interest due to its superior physical properties including high charge carrier mobility, optical transparency, ?exibility, and chemical stability. The intrinsic graphene has a zero energy bandgap, Eg, which has prevented it to be used in a similar way to the conventional semiconductors of well-de?ned Eg. However, the low charge carrier density and high charge mobility in graphene imply that graphene can be an excellent transparent conductor (TC) with both high electrical conductivity and optical transparency. Therefore, graphene makes an excellent alternative to transparent conducting oxides (TCOs) demanded for a large variety of photonic and optoelectronic applications including ?exible displays, light-emitting devices, detectors, touch screens, transistors, electromechanical resonators, ultracapacitors, and photovoltaics (PVs).
关键词： Photovoltaics,Optoelectronics,Graphene,Transparent Conductors,Chemical Vapor Deposition
更新于2025-09-23 15:21:21
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Effect of low-energy ion impact on the structure of hexagonal boron nitride films studied in surface-wave plasma
摘要： A high‐density surface‐wave plasma source is used to deposit hexagonal boron nitride (hBN) films in a gas mixture of He, H2, N2, Ar, and BF3 under a high ion flux condition using low‐energy ion irradiation. The ion energy is controlled between around zero and 100 eV by applying a negative or positive bias voltage to a substrate, while the ion flux is increased by locating a substrate upstream in the diffusive plasma. For ion energies above ～37 eV, the structure of the films depends upon ion energy more than substrate temperature, typical of subplantation processes. As a result, the structural order and crystallinity of sp2‐bonded phase in the films characterized by Fourier transform infrared spectroscopy and X‐ray diffraction are increased with decreasing ion energy, while the mass density of the films characterized by X‐ray reflectivity is retained relatively high with a slight dependence upon ion energy.
关键词： surface‐wave plasma,Fourier transform infrared spectroscopy (FTIR),chemical vapor deposition (CVD),hexagonal boron nitride (hBN),X‐ray diffraction (XRD),X‐ray reflectivity (XRR)
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Electron sources based on diamond pin-diodes
摘要： Efficient electron sources are of ongoing interest in particular for space and terrestrial power telecommunications and radar applications. With conventional cathode technology based on thermionic- and field electron emission a novel approach for direct electron emission is realized through a diamond pin diode. Electrons injected into the conduction band of the intrinsic layer of the diode can be released into vacuum with a negative electron affinity surface of the i-layer. The diamond pin diodes were prepared on boron doped (p-type) substrates with (111) surface orientation. A high purity intrinsic and a phosphorus doped diamond layer (n-type, ~400nm thickness) were deposited in dedicated PECVD systems, respectively. An additional contact layer comprised of nanostructured carbon was grown in a dedicated PECVD. The layered device was processed by lithography utilizing an aluminum hard mask to etch mesa structures with diameters ranging from 50μm to 200μm. The final devices were treated in a pure hydrogen plasma to induce the negative electron affinity properties of the i-layer. After an annealing step in high vacuum individual pin diodes were biased in forward current and voltages up to 20V. The observation of light from the diode was attributed to the UV exciton state and indicated bipolar transport. At a diode current of about 80mA an electron emission current of 25μA was observed from a single 200μm diameter diode.
关键词： Diamond,solid state electronics,doping,phosphorus,electron emission,plasma-enhanced chemical vapor deposition,nanostructured carbon,pin diode,single crystal
更新于2025-09-23 15:21:21
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Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition
摘要： Large area monolayer molybdenum disulfide (MoS2) film grown on silica/silicon substrate was synthesized using a catalyst perylene-3, 4, 9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) by the method of chemical vapor deposition. The properties of the monolayer MoS2 film were characterized using a number of techniques. The optical microscope images show the film is uniform and continuous on a large scale. The 0.7 nm film thickness measured by atomic force microscope, as well as the difference of 20 cm-1 between the two characteristic Raman peaks, all prove that the film is single layer. The strong photoluminescence spectrum and image as well as the x-ray diffraction indicate that the monolayer MoS2 film has a good quality. The MoS2 film synthesized under the same conditions without PTAS was also characterized as a comparison. The results show that the MoS2 film tends to thicker without using PTAS, suggesting that PTAS can not only promote the formation of the MoS2 seeding, but also induce horizontal growth of the MoS2 film on the substrate.
关键词： Molybdenum disulfide,Chemical vapor deposition,Monolayer
更新于2025-09-23 15:21:21
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Fabrication of Two-Dimensional Arrays of Fluorescent Centers in Single-Crystalline Diamond Using Particle Beam Writing
摘要： Micrometer-scale patterning was performed using the particle beam writing technique with a focused heavy-ion microbeam, allowing the creation of a unique two-dimensional distribution of fluorescent centers in single-crystalline diamond. The focused nitrogen microbeam was scanned over the target of single-crystalline diamond prepared by chemical vapor deposition to create nitrogen-vacancy (NV) centers at defined positions. Imaging using a custom-built confocal fluorescence microscopy system revealed that the desired NV distribution was generated in the target crystal with a spatial resolution similar to the beam resolution. A two-dimensional matrix barcode test pattern was successfully generated in a diamond substrate to demonstrate the encryption of information inside a solid-state target.
关键词： diamond,particle beam writing,two-dimensional,chemical vapor deposition,nitrogen vacancy centers,confocal fluorescence microscopy
更新于2025-09-23 15:21:21
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Insights into the Role of Plasma in Atmospheric Pressure Chemical Vapor Deposition of Titanium Dioxide Thin Films
摘要： In this work, the effect of plasma on the chemistry and morphology of coatings deposited by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD) is investigated. To do so, plasma deposited amorphous titanium dioxide (TiO2) thin films are compared to thin films deposited using Atmospheric Pressure Chemical Vapor Deposition (AP-CVD) not involving the use of plasma. We focus here on the effect and the interest of plasma in the AP-PECVD process over AP-CVD for low substrate temperature deposition. The advantages of AP-PECVD over AP-CVD are often suggested in many articles however no direct evidence of the role of the plasma for TiO2 deposition at atmospheric pressure was reported. Hence, herein, the deposition via both methods is directly compared by depositing coatings with and without plasma using the same CVD reactor. Through the control of the plasma parameters, we are able to form low carbon coatings at low temperature with a deposition rate twice faster than AP-CVD, clearly showing the interest of plasma. Plasma enhanced methods are promising for the deposition of coatings at industrial scale over large surface and at high rate.
关键词： AP-PECVD,TiO2 thin films,Atmospheric Pressure Chemical Vapor Deposition,Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition,plasma,AP-CVD,low substrate temperature deposition
更新于2025-09-23 15:21:01