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Passivation of HfO <sub/>2</sub> /Ge interface with YON fabricated by different approaches
摘要： Nitrided Y2O3 (YON) interfacial passivation layer (IPL) is used to passivate the HfO2/Ge interface for better interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor. Two different approaches were used to prepare the YON IPL, one is to deposit YON directly by sputtering Y2O3 target in Ar+N2 ambient, and the other is to deposit YN first by sputtering Y target in Ar+N2 ambient followed by the annealing in N2+O2 to convert YN to YON. Experimental results indicate that the MOS capacitor fabricated by the latter approach could achieve more excellent interfacial and electrical properties due to more effective suppression of the formation of Ge oxides.
关键词： passivation,MOS capacitor,sputtering,YON,HfO2/Ge interface
更新于2025-09-04 15:30:14
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Wet-Chemical Synthesis of Surface-Passivated Halide Perovskite Microwires for Improved Optoelectronic Performance and Stability
摘要： One-dimensional (1D) halide perovskite materials with intrinsic high carrier mobility and long diffusion length hold great promises for high-performance optoelectronic devices, in which the passivation of the surface defects is of significance for further boosting its optoelectronic performance as well as its moisture stability. Herein, we demonstrate a simple room-temperature wet-chemical synthetic protocol for perovskite microwires with controlled morphologies and passivated surface states. This strategy allows for facile assembly of hydrophobic 1H,1H-perfluorooctylamine (PFA) molecules on the surface of the perovskite microwires owing to the coordination binding between the amino groups of PFA and Pb2+. Both steady and time-resolved photoluminescence measurements revealed that the passivation of PFA greatly benefit for the inhibition of the photogenerated carriers recombination. The constructed perovskite microwire-based photodetectors have shown increased detectivity of 4.99 × 1011 jones and responsivity of 1.27 A/W (light power density of 1 mW/cm2). Moreover, the hydrophobic fluorocarbon alkyl chains endow the perovskite microwires with higher resistance toward moisture. Such coating of a water-resisting layer resulted in greatly enhanced stability of perovskite microwires under the humidity of 55 ± 5% over 30 days. We thus believe that our work is of importance for the development of 1D halide perovskite photodetectors with highly improved performance and stability.
关键词： stability,surface passivation,perovskite microwires,photodetector,PFA
更新于2025-09-04 15:30:14
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Nitrogen passivation formation on Cu surface by Ar–N2 plasma for Cu-to-Cu wafer stacking application
摘要： Wafer stacking technology provides reduced interconnect delay, improved bandwidth, reduced form factor, and decreased cost. Solder-based metallic die bonding is presently utilized in high-volume manufacturing, but Cu-based metallic wafer bonding is quickly becoming a key bonding technique for next generation 3D IC and heterogeneous stacking applications. In this study, Ar–N2 plasma treatment on Cu surface was investigated to passivate Cu surface with nitrogen and to enhance the bonding quality of Cu-to-Cu wafer bonding. The Ar–N2 plasma treatment was performed by conventional DC sputtering under 5 mTorr working pressure with different Ar–N2 partial pressures. Then, the effect of Ar–N2 plasma treatment on Cu surface was evaluated structurally and electrically. It was observed that the Ar–N2 plasma treatment with high nitrogen partial pressure over a sufficient plasma treatment time provided activated Cu surface, reduction of copper oxide and chemisorbed nitrogen, and copper nitride passivation. The Ar–N2 plasma treatment of Cu surface was found to be a potential pretreatment method for Cu-to-Cu bonding.
关键词： Nitrogen passivation,3D IC,Wafer stacking,Cu-to-Cu bonding,Ar–N2 plasma treatment
更新于2025-09-04 15:30:14
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Structural and optical properties of sulfur passivated epitaxial step-graded GaAs <sub/>1-y</sub> Sb <sub/>y</sub> materials
摘要： The impact of bulk and surface defect states on the vibrational and optical properties of step-graded epitaxial GaAs1-ySby (0 ≤ y ≤ 1) materials with and without chemical surface treatment by (NH4)2S was investigated. Tunable antimony (Sb) composition GaAs1-ySby epitaxial layers, grown by solid source molecular beam epitaxy (MBE), were realized on GaAs and Si substrates by varying key growth parameters (e.g., Sb/Ga ?ux ratio, growth temperature). Raman and photoluminescence (PL) spectroscopic analysis of (NH4)2S-treated GaAs1-ySby epitaxial layers revealed composition-independent Raman spectral widths and enhanced PL intensity (1.3×) following (NH4)2S surface treatment, indicating bulk defect-minimal epitaxy and a reduction in the surface recombination velocity corresponding to reduced surface defect sites, respectively. Moreover, quanti?cation of the luminescence recombination mechanisms across a range of measurement temperatures and excitation intensities (i.e., varying laser power) indicate the presence of free-electron to neutral acceptor pair or Sb-defect-related recombination pathways, with detectable bulk defect recombination discernible only in binary GaSb PL spectra. In addition, PL analysis of the short- and long-term thermodynamic stability of sulfur-treated GaAs1-ySby/Al2O3 heterointerfaces revealed an absence of quanti?able atomic interdiffusion or native oxide formation. Leveraging the combined Raman and PL analysis herein, the quality of the heteroepitaxial step-graded epitaxial GaAs1-ySby materials can be optimized for optical devices.
关键词： molecular beam epitaxy,optical properties,structural properties,sulfur passivation,Raman spectroscopy,surface treatment,photoluminescence spectroscopy,GaAs1-ySby
更新于2025-09-04 15:30:14
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Low-temperature homoepitaxial growth of two-dimensional antimony superlattices in silicon
摘要： The authors present a low-temperature process for the homoepitaxial growth of antimony superlattices in silicon. The all low-temperature superlattice doping process is compatible as a postfabrication step for device passivation. The authors have used low-temperature molecular beam epitaxy to embed atomically thin (2D), highly concentrated layers of dopant atoms within nanometers of the surface. This process allows for dopant densities on the order of 1013–1014 cm?2 (1020–1021 cm?3); higher than can be achieved with three-dimensional doping techniques. This effort builds on prior work with n-type delta doping; the authors have optimized the growth processes to achieve delta layers with sharp dopant profiles. By transitioning from a standard effusion cell to a valved cracker cell for antimony evaporation, the authors have achieved carrier densities approaching 1021 cm?3 with peak distribution at ～10 ? FWHM for single delta layers. Even at the highest dopant concentrations studied, no deterioration in carrier mobility is observed, suggesting the upper limit for dopant incorporation and activation has not yet been met. The authors will discuss the details related to growth optimization and show results from in situ monitoring by electron diffraction. They will also report on elemental and electrical characterization of the films.
关键词： silicon,molecular beam epitaxy,surface passivation,homoepitaxial growth,delta doping,low-temperature,antimony superlattices
更新于2025-09-04 15:30:14
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WO3/BiVO4 Type-II Heterojunction Arrays Decorated with Oxygen-deficient ZnO Passivation Layer: a Highly Efficient and Stable Photoanode
摘要： In present work, we report a ternary WO3/BiVO4/ZnO photoanode with boosted PEC efficiency and stability towards highly efficient water splitting. The type-II WO3/BiVO4 heterojunction arrays are firstly prepared by hydrothermal growth of WO3 nanoplate arrays onto the substrates of ?uorine-doped tin oxide (FTO) coated glasses, followed by spin-coating of BiVO4 layers onto the WO3 nanoplate surfaces. After that, thin ZnO layers are further introduced onto the WO3/BiVO4 heterojunction arrays via atomic layer deposition (ALD), leading to the construction of ternary WO3/BiVO4/ZnO photoanodes. It is verified that the ZnO thin layer in WO3/BiVO4/ZnO photoanode contains abundant oxygen vacancies, which could be acted as an effective passivation layer to enhance the charge separation and surface water oxidation kinetics of photogenerated carriers. The as-prepared WO3/BiVO4/ZnO photoanode produces a photocurrent of 2.96 mA cm-2 under simulated sunlight with an incident photon-to-current conversion e?ciency (IPCE) of ～72.8 % at 380 nm at a potential of 1.23 V vs. RHE without cocatalysts, both of which are comparable to the state-of-art WO3/BiVO4 counterparts. Moreover, the photocurrent of WO3/BiVO4/ZnO photoanode shows only 9 % decay after 6 h, suggesting its high photoelectrochemical (PEC) stability.
关键词： type-II heterojunction,WO3/BiVO4,nanoplate arrays,photoelectrochemistry,passivation layer
更新于2025-09-04 15:30:14
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Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of <i>f</i> <sub/>T</sub> Based on the Small Signal Equivalent Circuit
摘要： This paper analyses, the influence of Si3N4-PECVD and Al2O3-ALD surface passivation on the DC and RF characteristics of InP HEMTs with different gate lengths 0.08 μm, 0.1 μm, 0.12 μm, and 0.15 μm. A significant improvement in maximum drain current IDS_MAX, transconductance gm_MAX and oscillation frequency fmax_MAX is obtained by scaling the thickness of the passivation layers An increase in gm_MAX and fmax_MAX, fT_MAX is observed by reducing parasitic capacitance w.r.t. the decrease in gate length. In addition, an analytical model of fT based on a small-signal equivalent circuit is developed, which consist of extrinsic parameters Rs, Rd, Cgs_ext and Cgd_ext and intrinsic parameters Cgsi, Cgdi, gmi and goi. The carrier transport is improved by increasing gmi, thus the transit time τt, the parasitic charging delay τext and the τpar are reduced by lowering the extrinsic capacitances. An excellent fitting between measured and simulated fT is achieved, which inturn leads a realistic way for further improvement in fT.
关键词： Passivation,Maximum Oscillation Frequency,Transconductance,Fabrication
更新于2025-09-04 15:30:14