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Effect of annealing treatment on transparent and conductive hydrated magnesium-carbon films
摘要： Transparent electronic technology has many urgent optoelectronic device applications. A key component of plasmonic materials in conventional semiconductors is the wide band gap of oxide thin films. Although transparent electronic materials have been developed for visible and near-infrared wavelengths, systems incorporating mid-infrared and far-infrared spectra are difficult to achieve. In this study, hydrated magnesium-carbon films, a new type of non-oxide transparent conductive thin films with a magnesium hydroxide structure, were generated using the three-step method. After annealing treatment, larger crystals in the thin films typically exhibited superior film resistivity, with conductivity values of approximately 8.63 × 10?3 Ω m. Due to the free electron concentration was not more than 1020 cm?3, the films demonstrated excellent optical properties, with plasma wavelength values of approximately 8 mm for infrared transmittance above 70%. After annealing, due to the Moss-Burstein (M-B) effect, the visible light transmittance was greater than 85% and the optical bandgap shifted towards the blue region. In addition, the influences of the sputtering power of the carbon target on the properties of hydrated magnesium-carbon film were also discussed in this paper.
关键词： Transparent conductive films,Electrical properties,Magnetron sputtering,Hydrated magnesium-carbon films
更新于2025-09-10 09:29:36
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Polycrystalline diamond films with tailored micro/nanostructure/doping for new large area film-based diamond electronics
摘要： This paper describes processes developed to change two key electrical properties (electrical resistivity and carrier type) of ultrananocrystalline diamond (UNCD) to microcrystalline diamond (MCD) films. The results show that the electrical properties of the investigated polycrystalline diamond films depend on the grain size and plasma treated grain boundary networks interfaces and external films’ surfaces, in which hydrogen, fluorine or nitrogen can be incorporated to tailor electrical carriers-type to tune the electrical properties. Exploring the feasibility of modulating the resistivity of polycrystalline diamond films via tailoring of grain size, surface chemistry and nitrogen or fluorine incorporation into films’ grain boundaries and external surfaces may enable applications of these diamond films as active or heat dissipation layers on micro/nano-electronic devices. This work can open the pathway to enabling an industrial process for new diamond-based electronics, since polycrystalline diamond films can be grown with extreme uniformity on 300 mm diameter Si wafers, used in manufacturing of current Si-based micro/nano-electronic devices.
关键词： Nitrogen incorporation,Diamond-based electronics,Electrical properties,Plasma treatment,Fluorine incorporation,Grain size,Polycrystalline diamond films
更新于2025-09-10 09:29:36
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Ecofriendly Mg2Si-based photodiode for short-wavelength IR sensing
摘要： N-type Mg2Si single crystal ingot has been successfully grown by the Vertical Bridgman technique. The Hall Effect measurement at RT revealed a moderate Hall mobility (~ 446 cm2/Vs), electrical resistivity (~ 1.4 Ω. cm) and carrier density (~1016 cm?3) for the grown crystal. The J-V characteristics of the fabricated Au/n-Mg2Si Schottky junction and Au/Ag-doped-p-type-Mg2Si/n-type-Mg2Si/Ag pn-junction diode showed better diode behavior with higher rectifying ratio in comparison with the same reported junctions. Analysis of the experimental forward J-V characteristics of our fabricated diodes based on the thermionic emission (TE) model demonstrated that our Schottky and pn-junction Mg2Si diode exhibited much lower series resistance in comparison with the survey data, confirming that precise polishing of Mg2Si surfaces with an oil-based diamond greatly improved the contact with the evaporated metal, enabling lower interfacial resistance between the evaporated metal and Mg2Si wafer. In addition, the manufactured Mg2Si pn-junction photodiode showed a clear photoresponsivity in the wavelength range from 0.95 to 1.8 μm with a maximum zero-biased photoresponse of 14 mA/ W at 1.4 μm and a photon energy threshold of approximately 0.66 eV. These results indicate that our diode is promising to detect the SWIR light in the wavelength range from 0.95 to 1.8 μm.
关键词： Electrical properties,IR sensors,Semiconducting silicides,Single crystal growth
更新于2025-09-10 09:29:36
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Effect of Os doping on electrical properties of YMnO3 multiferroic perovskite-oxide compounds
摘要： In this study, YMnO3 (YMO) and osmium (Os) doped YMO (YMn1-xOsxO3) (x = 0.01, 0.05, 0.10) compounds were synthesized via conventional solid-state reaction and their frequency and temperature depended electrical properties were investigated by wide range dielectric/impedance spectrometer. Structural and chemical analysis of YMO and Os doped YMO powders were carried out using via scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS). Impedance measurement results revealed that only grain boundary relaxation peak observed for YMO and 1 mol% Os doped YMO whereas both grain boundary and grain relaxation peaks observed for 5 mol% and 10 mol% Os doped samples. It has been seen that resistivity of the YMO can be decreased via Os doping and we observed that 10 mol% Os doped sample has the lowest resistivity among the other samples. The activation energies of YMO and Os doped YMO compounds were calculated. The results showed that the activation energy values of studied compounds gradually decreased via increasing Os doping ratio. Moreover, it has been demonstrated that the grain boundaries have higher energies that the grains.
关键词： Multiferroic,YMnO3,Perovskite-oxide,Electrical properties,Os doping
更新于2025-09-10 09:29:36
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Determination of polaronic conductivity in disordered double perovskite La2CrMnO6
摘要： Double perovskite La2CrMnO6 ceramics was sintered using standard high temperature route in ambient air. The orthorhombic Pbnm cell characterized by a total disorder between Cr and Mn ions was determined using an XRD powder test. The grain morphology, porosity and chemical composition were determined using scanning electron microscopy. The X-ray photoemission spectroscopy showed several contributions to O 1 s, La 3d, Mn 2p, and Cr 2p core lines related to the occurrence of multiple ionic states. The electrical permittivity, modulus, AC and DC conductivity were measured in ranges of f = 20 Hz – 1 MHz and 76–440 K. The electrical transport mechanism was attributed to the small polarons. The nearest neighbor hopping occurred in the range 170 to 440 K. The variable range hoping, attributed to the Fermi glass features and disorder, was detected in the range 100 to 160 K. The relaxation process related to the temperature-independent activation energy was deduced from the electric modulus scaling.
关键词： La2CrMnO6 ceramics,Sintering,Electrical properties,Solid state synthesis
更新于2025-09-10 09:29:36
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Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks
摘要： In this work, the effects of atomic-layer-deposited (ALD) Al2O3 passivation layers with different thicknesses on the interface chemistry and electrical properties of sputtering-derived HfYO gate dielectrics on Si substrates have been investigated. The results of electrical measurements and X-ray photoelectron sepectroscopy (XPS) showed that 1-nm-thick Al2O3 passivation layer is optimized to obtain excellent interfacial properties for HfYO/Si gate stack. Then, the metal-oxide-semiconductor capacitors with HfYO/1-nm Al2O3/Si/Al gate stack were fabricated and annealed at different temperatures in forming gas (95% N2+5% H2). Capacitance-voltage (C-V) and current density-voltage (J-V) characteristics showed that the 250oC-annealed HYO high-k gate dielectric thin film demonstrated the lowest border trapped oxide charge density (-3.3 × 1010 cm-2), smallest gate-leakage current (2.45 × 10-6 A/cm2 at 2 V) compared with other samples. Moreover, the annealing temperature dependent leakage current conduction mechanism for Al/HfYO/Al2O3/Si/Al MOS capacitor has been investigated systematically. Detailed electrical measurements reveal that Poole-Frenkle emission is the main dominant emission in the region of low and medium electric fields while direct tunneling is dominant conduction mechanism at high electric fields.
关键词： Al2O3 passivation layer,Electrical properties,Annealing,Co-sputtering HYO films,Conduction mechanism
更新于2025-09-10 09:29:36
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Temperature dependent electrical properties of AlN/Si heterojunction
摘要： AlN is an integral part of many Si based electronic, optoelectronic, and electromechanical devices. The transport of charge carriers and their recombination at the AlN (0002)/Si (111) interface become crucial for the performance and reliability of such devices. In this work, we have studied the temperature dependent current-voltage (I-V-T) characteristics of AlN/Si heterojunctions to gain a deeper understanding. The analysis of the I-V-T characteristics interestingly suggested a temperature dependent turn-on voltage in the forward bias of the Schottky barrier. Also, the Schottky barrier itself was found to be temperature dependent as expected. We have qualitatively explained the temperature dependence of the turn-on voltage in terms of trap states at the AlN/Si heterojunction.
关键词： electrical properties,temperature dependent,AlN/Si heterojunction,Schottky barrier,trap states
更新于2025-09-10 09:29:36
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Impact of molarity on structural, optical, morphological and electrical properties of copper oxide thin films prepared by cost effective jet nebulizer spray pyrolysis technique
摘要： Copper oxide (CuO) thin films were prepared by simple and cost effective jet nebulizer spray pyrolysis method with different molar concentration 0.1, 0.2 and 0.3 M named as J1, J2 and J3 respectively. The impact of molarity on structural, optical, morphological and electrical of properties of CuO thin film was studied. The structural studies confirmed that the prepared CuO thin films are monoclinic crystal structure matching with standard JCPDS card No. 89-5899. The thickness of CuO thin films determined by surface profilometer found to be increasing while increasing molar concentration. The optical energy band gaps were determined using Kulbelka–Munk (K–M) method are found to be 2.1 eV, 1.9 eV and 1.8 eV for J1, J2 and J3 respectively. The morphological properties and chemical composition of CuO thin film were investigated via field-emission scanning electron microscope (FESEM) and energy dispersive analysis from X-ray spectroscopy (EDAX). According to FESEM all the prepared CuO thin films are well covered and adhered to the substrate with good homogeneity and EDAX spectra confirms the presence of copper (Cu) and oxygen (O). The adhesion strength has been determined in accordance with test method D3330 using scotch tape test. The electrical conductivity of CuO thin films were investigated. The maximum conductivity value of the CuO thin film is observed 2.75 × 10?8 S/cm.
关键词： Thin films,Molar concentration,Copper oxide,Morphological properties,Jet nebulizer spray pyrolysis,Structural properties,Optical properties,Electrical properties
更新于2025-09-09 09:28:46
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Substrate temperature dependent variation in the properties of cadmium telluride thin films deposited on glass
摘要： The present study relates to the variation in properties of cadmium telluride (CdTe) thin films deposited via electron beam and thermal vacuum evaporation methods at two different substrate temperatures. The influence of substrate temperature on structural, morphological, optical and electrical properties of CdTe thin films is investigated. For structural characterization, grazing incidence X-ray diffraction technique is used which revealed that thin films deposited at 200 °C temperature are more crystalline in nature as compare to the room temperature. The parameters such as average crystallite size (D), lattice strain (ε), number of crystallites per unit area (N) and texture coefficient TC (hkl) were calculated for both types of synthesized CdTe thin films. Surface morphology of thin films was recorded using scanning electron microscopy and found to be homogeneous in nature. The optical studies carried out using UV–Visible Spectrophotometer and Photoluminescence shown a decrease in band gap values for both electron beam and thermally deposited thin films samples at 200 °C substrate temperature. Electrical measurements recorded using two probes method showed the maximum value of current for CdTe thin films deposited by electron beam evaporation method at 200 °C substrate temperature.
关键词： Thermal vacuum evaporation,Optical properties,Thin films,Electron beam evaporation,Electrical properties,Structural properties,Substrate temperature,Cadmium telluride
更新于2025-09-09 09:28:46
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Influence of Iodine Doping on the Structure, Morphology and Physical Properties of Manganese Phthalocyanine Thin Films
摘要： Doping with halide ions is a popular method to alter the properties of metal phthalocyanines (MPcs), particularly magnetic and electrical nature of organic semiconductors for applications in spintronic or electronic devices. Doping can cause a structural rearrangement in MPc packing and the physical properties may be correlated with molecular packing. Films of a planar and magnetic MPc, manganese(II)phthalocyanine (MnPc) is chosen for iodine doping study. The optical, magnetic and the electrical properties of pristine and iodine doped MnPc thin films are investigated and can be directly associated with their molecular structure. 2D grazing incidence Synchrotron X-ray diffraction reveals structural disorder in MnPc films upon iodine infusion induced by the reorientation of ordered, edge-on molecular configuration to tilted and face-on configurations in a random fashion. The film morphology changes accordingly, where in the uniform crystallites reorganize in a disordered manner. The ferromagnetic nature of the pristine film gets weakened due to iodine species and favors antiferromagnetic coupling. The study of electrical properties at room temperature by conducting atomic force microscopy reveals that the conductance is enhanced independently of the film thickness due to disorder induced by iodine inclusion.
关键词： Thin Films,Electrical properties,Structural rearrangement,Manganese Phthalocyanine,Iodine doping,Magnetic properties
更新于2025-09-09 09:28:46